| Suitability of Au-and self-assisted GaAs nanowires for optoelectronic applications S Breuer, C Pfuller, T Flissikowski, O Brandt, HT Grahn, L Geelhaar, ... Nano letters 11 (3), 1276-1279, 2011 | 244 | 2011 |
| Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments U Jahn, J Lähnemann, C Pfüller, O Brandt, S Breuer, B Jenichen, ... Physical Review B 85 (4), 045323, 2012 | 147 | 2012 |
| Enhanced minority carrier lifetimes in GaAs/AlGaAs core–shell nanowires through shell growth optimization N Jiang, Q Gao, P Parkinson, J Wong-Leung, S Mokkapati, S Breuer, ... Nano letters 13 (11), 5135-5140, 2013 | 123 | 2013 |
| Self-assisted nucleation and vapor–solid growth of InAs nanowires on bare Si (111) E Dimakis, J Lähnemann, U Jahn, S Breuer, M Hilse, L Geelhaar, ... Crystal Growth & Design 11 (9), 4001-4008, 2011 | 118 | 2011 |
| Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1− xAs core-shell nanowires N Jiang, P Parkinson, Q Gao, S Breuer, HH Tan, J Wong-Leung, ... Applied Physics Letters 101 (2), 2012 | 116 | 2012 |
| Incorporation of the dopants Si and Be into GaAs nanowires M Hilse, M Ramsteiner, S Breuer, L Geelhaar, H Riechert Applied Physics Letters 96 (19), 2010 | 104 | 2010 |
| Twinning superlattice formation in GaAs nanowires T Burgess, S Breuer, P Caroff, J Wong-Leung, Q Gao, H Hoe Tan, ... ACS nano 7 (9), 8105-8114, 2013 | 98 | 2013 |
| Band gap of wurtzite GaAs: A resonant Raman study P Kusch, S Breuer, M Ramsteiner, L Geelhaar, H Riechert, S Reich Physical Review B 86 (7), 075317, 2012 | 92 | 2012 |
| Optoelectronic frequency-modulated continuous-wave terahertz spectroscopy with 4 THz bandwidth L Liebermeister, S Nellen, RB Kohlhaas, S Lauck, M Deumer, S Breuer, ... Nature Communications 12 (1), 1071, 2021 | 90 | 2021 |
| 637 μW emitted terahertz power from photoconductive antennas based on rhodium doped InGaAs RB Kohlhaas, S Breuer, L Liebermeister, S Nellen, M Deumer, M Schell, ... Applied Physics Letters 117 (13), 2020 | 73 | 2020 |
| Acoustically driven photon antibunching in nanowires A Hernández-Mínguez, M Möller, S Breuer, C Pfüller, C Somaschini, ... Nano letters 12 (1), 252-258, 2012 | 64 | 2012 |
| Photoconductive terahertz detectors with 105 dB peak dynamic range made of rhodium doped InGaAs RB Kohlhaas, S Breuer, S Nellen, L Liebermeister, M Schell, MP Semtsiv, ... Applied Physics Letters 114 (22), 2019 | 60 | 2019 |
| Ultra-fast, high-bandwidth coherent cw THz spectrometer for non-destructive testing L Liebermeister, S Nellen, R Kohlhaas, S Breuer, M Schell, B Globisch Journal of Infrared, Millimeter, and Terahertz Waves 40, 288-296, 2019 | 58 | 2019 |
| Vapor-liquid-solid nucleation of GaAs on Si (111): Growth evolution from traces to nanowires S Breuer, M Hilse, A Trampert, L Geelhaar, H Riechert Physical Review B 82 (7), 075406, 2010 | 52 | 2010 |
| Ferromagnet-semiconductor nanowire coaxial heterostructures grown by molecular-beam epitaxy M Hilse, Y Takagaki, J Herfort, M Ramsteiner, C Herrmann, S Breuer, ... Applied Physics Letters 95 (13), 2009 | 49 | 2009 |
| Three-dimensional in situ photocurrent mapping for nanowire photovoltaics P Parkinson, YH Lee, L Fu, S Breuer, HH Tan, C Jagadish Nano letters 13 (4), 1405-1409, 2013 | 45 | 2013 |
| Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111) A Biermanns, S Breuer, A Trampert, A Davydok, L Geelhaar, U Pietsch Nanotechnology 23 (30), 305703, 2012 | 42 | 2012 |
| Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire A Senichev, P Corfdir, O Brandt, M Ramsteiner, S Breuer, J Schilling, ... Nano Research 11, 4708-4721, 2018 | 40 | 2018 |
| AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution BJ Godejohann, E Ture, S Müller, M Prescher, L Kirste, R Aidam, ... physica status solidi (b) 254 (8), 1600715, 2017 | 35 | 2017 |
| Continuous wave terahertz receivers with 4.5 THz bandwidth and 112 dB dynamic range M Deumer, S Breuer, R Kohlhaas, S Nellen, L Liebermeister, S Lauck, ... Optics Express 29 (25), 41819-41826, 2021 | 29 | 2021 |
Martin SchellInstitute Head, Fraunhofer HHI, Berlin, Germany在 hhi.fraunhofer.de 的电子邮件经过验证
