| Laser-assisted interface engineering for functional interfacial layer of Al/ZnO/Al resistive random access memory (RRAM) CJ Park, SW Han, MW Shin ACS applied materials & interfaces 12 (28), 32131-32142, 2020 | 24 | 2020 |
| The role of Al atoms in resistive switching for Al/ZnO/Pt resistive random access memory (RRAM) device SW Han, CJ Park, MW Shin Surfaces and Interfaces 31, 102099, 2022 | 14 | 2022 |
| UV-laser annealing for improved resistive switching performance and reliability of flexible resistive random-access memory SW Han, MW Shin Journal of Alloys and Compounds 908, 164658, 2022 | 8 | 2022 |
| Al2O3 interfacial layer derived hybrid conductive filament for the reliability enhancement of Ta2O5-based resistive random access memory SW Han, MW Shin Journal of Alloys and Compounds 960, 170902, 2023 | 4 | 2023 |
| Application of nanosecond laser to a direct and rapid growth of Cu-BTC metal-organic framework thin films on copper substrate CT Lee, SW Han, MW Shin Surfaces and Interfaces 30, 101904, 2022 | 3 | 2022 |
| Laser-modulated formation of conduction path for the achievement of ultra-low switching voltage in resistive random-access memory (RRAM) SW Han, S Shin, CT Lee, MW Shin Nano Energy 117, 108886, 2023 | 2 | 2023 |
| Lasing‐Assisted Synthesis of Metal–Organic Frameworks (MOFs) and Its Application to Memory and Neuromorphic Devices SW Han, CT Lee, YW Song, Y Yoon, JY Kwon, L Yang, MW Shin Advanced Functional Materials, 2406088, 2024 | | 2024 |
