| Novel dilute bismide, epitaxy, physical properties and device application L Wang, L Zhang, L Yue, D Liang, X Chen, Y Li, P Lu, J Shao, S Wang Crystals 7 (3), 63, 2017 | 88 | 2017 |
| Negative thermal quenching of below-bandgap photoluminescence in InPBi X Chen, X Wu, L Yue, L Zhu, W Pan, Z Qi, S Wang, J Shao Applied Physics Letters 110 (5), 2017 | 26 | 2017 |
| Molecular beam epitaxy growth and optical properties of high bismuth content GaSb1-xBix thin films L Yue, X Chen, Y Zhang, F Zhang, L Wang, J Shao, S Wang Journal of Alloys and Compounds 742, 780-789, 2018 | 23 | 2018 |
| A new route toward light emission from Ge: tensile-strained quantum dots Q Chen, Y Song, K Wang, L Yue, P Lu, Y Li, Q Gong, S Wang Nanoscale 7 (19), 8725-8730, 2015 | 23 | 2015 |
| Growth and material properties of InPBi thin films using gas source molecular beam epitaxy W Pan, P Wang, X Wu, K Wang, J Cui, L Yue, L Zhang, Q Gong, S Wang Journal of Alloys and Compounds 656, 777-783, 2016 | 22 | 2016 |
| Raman scattering studies of dilute InP1− xBix alloys reveal unusually strong oscillator strength for Bi-induced modes W Pan, JA Steele, P Wang, K Wang, Y Song, L Yue, X Wu, H Xu, Z Zhang, ... Semiconductor Science and Technology 30 (9), 094003, 2015 | 19 | 2015 |
| Structural and optical properties of GaSbBi/GaSb quantum wells L Yue, X Chen, Y Zhang, J Kopaczek, J Shao, M Gladysiewicz, ... Optical Materials Express 8 (4), 893-900, 2018 | 16 | 2018 |
| Temperature dependent lasing characteristics of InAs/InP (100) quantum dot laser SG Li, Q Gong, CF Cao, XZ Wang, P Chen, L Yue, QB Liu, HL Wang, ... Materials science in semiconductor processing 15 (1), 86-90, 2012 | 16 | 2012 |
| Effect of rapid thermal annealing on InP1− xBix grown by molecular beam epitaxy XY Wu, K Wang, WW Pan, P Wang, YY Li, YX Song, Y Gu, L Yue, H Xu, ... Semiconductor Science and Technology 30 (9), 094014, 2015 | 15 | 2015 |
| Bismuth-induced band-tail states in GaAsBi probed by photoluminescence B Yan, X Chen, L Zhu, W Pan, L Wang, L Yue, X Zhang, L Han, F Liu, ... Applied Physics Letters 114 (5), 2019 | 14 | 2019 |
| Novel type II InGaAs/GaAsBi quantum well for longer wavelength emission L Yue, Y Song, X Chen, Q Chen, W Pan, X Wu, J Liu, L Zhang, J Shao, ... Journal of Alloys and Compounds 695, 753-759, 2017 | 14 | 2017 |
| Novel InGaPBi single crystal grown by molecular beam epitaxy L Yue, P Wang, K Wang, X Wu, W Pan, Y Li, Y Song, Y Gu, Q Gong, ... Applied Physics Express 8 (4), 041201, 2015 | 13 | 2015 |
| Nanoscale distribution of Bi atoms in InP1−xBix L Zhang, M Wu, X Chen, X Wu, E Spiecker, Y Song, W Pan, Y Li, L Yue, ... Scientific Reports 7 (1), 12278, 2017 | 9 | 2017 |
| Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy K Wang, P Wang, WW Pan, XY Wu, L Yue, Q Gong, SM Wang Semiconductor Science and Technology 30 (9), 094006, 2015 | 8 | 2015 |
| Wavelength extension in GaSbBi quantum wells using delta-doping Y Zhang, L Yue, X Chen, J Shao, X Ou, S Wang Journal of Alloys and Compounds 744, 667-671, 2018 | 7 | 2018 |
| High-performance InAs/GaAs quantum dot laser with dot layers grown at 425° C L Yue, Q Gong, C Cao, J Yan, Y Wang, R Cheng, S Li Chinese Optics Letters 11 (6), 061401, 2013 | 7 | 2013 |
| Low-temperature characteristics of two-color InAs/InP quantum dots laser S Li, Q Gong, X Wang, L Yue, O Liu, H Wang Chinese Optics Letters 10 (4), 041406, 2012 | 7 | 2012 |
| Multicolor InAs/InP (100) quantum dot laser SG Li, Q Gong, CF Cao, XZ Wang, RC Wang, L Yue, QB Liu, HL Wang Chinese Physics Letters 28 (11), 114212, 2011 | 7 | 2011 |
| Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence P Wang, W Pan, K Wang, X Wu, L Yue, Q Gong, S Wang AIP Advances 5 (12), 2015 | 6 | 2015 |
| The scanning tunneling microscopy and spectroscopy of GaSb1–x Bi x films of a few-nanometer thickness grown by molecular beam epitaxy F Zha, Q Zhang, H Dai, X Zhang, L Yue, S Wang, J Shao Journal of Semiconductors 42 (9), 092101, 2021 | 5 | 2021 |
