| nBn detector, an infrared detector with reduced dark current and higher operating temperature S Maimon, GW Wicks Applied Physics Letters 89 (15), 2006 | 854 | 2006 |
| Demonstration of zero optical backscattering from single nanoparticles S Person, M Jain, Z Lapin, JJ Sáenz, G Wicks, L Novotny Nano letters 13 (4), 1806-1809, 2013 | 588 | 2013 |
| Binding of shallow donor impurities in quantum-well structures NC Jarosik, BD McCombe, BV Shanabrook, J Comas, J Ralston, G Wicks Physical review letters 54 (12), 1283, 1985 | 281 | 1985 |
| Circularly symmetric operation of a concentric‐circle‐grating, surface‐emitting, AlGaAs/GaAs quantum‐well semiconductor laser T Erdogan, O King, GW Wicks, DG Hall, EH Anderson, MJ Rooks Applied Physics Letters 60 (16), 1921-1923, 1992 | 191 | 1992 |
| Magnesium‐and calcium‐doping behavior in molecular‐beam epitaxial III‐V compounds CEC Wood, D Desimone, K Singer, GW Wicks Journal of Applied Physics 53 (6), 4230-4235, 1982 | 178 | 1982 |
| Photoluminescence of AlxGa1−xAs grown by molecular beam epitaxy G Wicks, WI Wang, CEC Wood, LF Eastman, L Rathbun Journal of Applied Physics 52 (9), 5792-5796, 1981 | 154 | 1981 |
| Room‐temperature exciton transitions in partially intermixed GaAs/AlGaAs superlattices JD Ralston, S O’brien, GW Wicks, LF Eastman Applied physics letters 52 (18), 1511-1513, 1988 | 139 | 1988 |
| Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxy P Enquist, GW Wicks, LF Eastman, C Hitzman Journal of applied physics 58 (11), 4130-4134, 1985 | 133 | 1985 |
| Calculation of the conduction band discontinuity for Ga0. 47In0. 53As/Al0. 48In0. 52As heterojunction DF Welch, GW Wicks, LF Eastman Journal of applied physics 55 (8), 3176-3179, 1984 | 129 | 1984 |
| Oxidation study of GaN using x-ray photoemission spectroscopy NJ Watkins, GW Wicks, Y Gao Applied Physics Letters 75 (17), 2602-2604, 1999 | 124 | 1999 |
| Hot electron relaxation time in GaN H Ye, GW Wicks, PM Fauchet Applied physics letters 74 (5), 711-713, 1999 | 121 | 1999 |
| Luminescence line shape broadening mechanisms in GaInAs/AlInAs quantum wells DF Welch, GW Wicks, LF Eastman Applied physics letters 46 (10), 991-993, 1985 | 116 | 1985 |
| Photoluminescence study of confined donors in GaAs Al x Ga 1− x As quantum wells X Liu, A Petrou, BD McCombe, J Ralston, G Wicks Physical Review B 38 (12), 8522, 1988 | 113 | 1988 |
| Enhanced linear and nonlinear optical phase response of AlGaAs microring resonators JE Heebner, NN Lepeshkin, A Schweinsberg, GW Wicks, RW Boyd, ... Optics letters 29 (7), 769-771, 2004 | 110 | 2004 |
| Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxy GW Wicks, MW Koch, JA Varriano, FG Johnson, CR Wie, HM Kim, ... Applied physics letters 59 (3), 342-344, 1991 | 110 | 1991 |
| An intra-chip free-space optical interconnect J Xue, A Garg, B Ciftcioglu, J Hu, S Wang, I Savidis, M Jain, R Berman, ... ACM SIGARCH Computer Architecture News 38 (3), 94-105, 2010 | 108 | 2010 |
| Dark current filtering in unipolar barrier infrared detectors GR Savich, JR Pedrazzani, DE Sidor, S Maimon, GW Wicks Applied Physics Letters 99 (12), 2011 | 106 | 2011 |
| Use of nBn structures to suppress surface leakage currents in unpassivated InAs infrared photodetectors JR Pedrazzani, S Maimon, GW Wicks Electronics Letters 44 (25), 1487-1488, 2008 | 106 | 2008 |
| Defect structure and intermixing of ion‐implanted AlxGa1− xAs/GaAs superlattices J Ralston, GW Wicks, LF Eastman, BC De Cooman, CB Carter Journal of applied physics 59 (1), 120-123, 1986 | 104 | 1986 |
| GaInAs‐AlInAs structures grown by molecular beam epitaxy H Ohno, CEC Wood, L Rathbun, DV Morgan, GW Wicks, LF Eastman Journal of Applied Physics 52 (6), 4033-4037, 1981 | 96 | 1981 |
G R SavichMonroe Community College, University of Rochester在 rochester.edu 的电子邮件经过验证
