| Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band DC Look, DC Walters, MO Manasreh, JR Sizelove, CE Stutz, KR Evans Physical Review B 42 (6), 3578, 1990 | 384 | 1990 |
| Semiconductor heterojunctions and nanostructures O Manasreh McGraw-Hill, Inc., 2005 | 196 | 2005 |
| Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 C: Observation of an EL2-like defect MO Manasreh, DC Look, KR Evans, CE Stutz Physical Review B 41 (14), 10272, 1990 | 164 | 1990 |
| Semiconductor quantum wells and superlattices for long-wavelength infrared detectors MO Manasreh (No Title), 1993 | 147 | 1993 |
| Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy J Wu, D Shao, VG Dorogan, AZ Li, S Li, EA DeCuir Jr, MO Manasreh, ... Nano letters 10 (4), 1512-1516, 2010 | 130 | 2010 |
| Temperature dependence of the band gap of colloidal CdSe∕ ZnS core/shell nanocrystals embedded into an ultraviolet curable resin A Joshi, KY Narsingi, MO Manasreh, EA Davis, BD Weaver Applied physics letters 89 (13), 2006 | 121 | 2006 |
| Optical absorption near the band edge in GaN grown by metalorganic chemical-vapor deposition MO Manasreh Physical Review B 53 (24), 16425, 1996 | 105 | 1996 |
| Surface plasmon enhanced intermediate band based quantum dots solar cell J Wu, SC Mangham, VR Reddy, MO Manasreh, BD Weaver Solar energy materials and solar cells 102, 44-49, 2012 | 102 | 2012 |
| The EL2 defect in GaAs: Some recent developments MO Manasreh, DW Fischer, WC Mitchel Physica Status Solidi (Sectio) B: Basic Research;(German Democratic Republic …, 1989 | 94 | 1989 |
| Multicolor photodetector based on GaAs quantum rings grown by droplet epitaxy J Wu, Z Li, D Shao, MO Manasreh, VP Kunets, ZM Wang, GJ Salamo, ... Applied Physics Letters 94 (17), 2009 | 91 | 2009 |
| Origin of the blueshift in the intersubband infrared absorption in GaAs/Al 0.3 Ga 0.7 As multiple quantum wells MO Manasreh, F Szmulowicz, T Vaughan, KR Evans, CE Stutz, ... Physical Review B 43 (12), 9996, 1991 | 83 | 1991 |
| III-nitride semiconductors: electrical, structural and defects properties MO Manasreh Elsevier, 2000 | 78 | 2000 |
| Intersubband infrared absorption in a GaAs/Al0.3Ga0.7As quantum well structure MO Manasreh, F Szmulowicz, DW Fischer, KR Evans, CE Stutz Applied physics letters 57 (17), 1790-1792, 1990 | 78 | 1990 |
| Intermediate-band material based on GaAs quantum rings for solar cells J Wu, D Shao, Z Li, MO Manasreh, VP Kunets, ZM Wang, GJ Salamo Applied Physics Letters 95 (7), 2009 | 74 | 2009 |
| Enhancement of GaAs solar cell performance by using a ZnO sol–gel anti-reflection coating YF Makableh, R Vasan, JC Sarker, AI Nusir, S Seal, MO Manasreh Solar Energy Materials and Solar Cells 123, 178-182, 2014 | 70 | 2014 |
| Ion-beam-produced damage and its stability in AlN films SO Kucheyev, JS Williams, J Zou, C Jagadish, M Pophristic, S Guo, ... Journal of applied physics 92 (7), 3554-3558, 2002 | 70 | 2002 |
| Introduction to nanomaterials and devices O Manasreh John Wiley & Sons, 2011 | 65 | 2011 |
| Negative persistent photoconductivity in the Al0.6Ga0.4Sb/InAs quantum wells I Lo, WC Mitchel, MO Manasreh, CE Stutz, KR Evans Applied physics letters 60 (6), 751-753, 1992 | 60 | 1992 |
| Incorporation of carbon in heavily doped AlxGa1−xAs grown by metalorganic molecular beam epitaxy CR Abernathy, SJ Pearton, MO Manasreh, DW Fischer, DN Talwar Applied physics letters 57 (3), 294-296, 1990 | 57 | 1990 |
| Strong interband transitions in InAs quantum dots solar cell J Wu, YFM Makableh, R Vasan, MO Manasreh, B Liang, CJ Reyner, ... Applied Physics Letters 100 (5), 2012 | 54 | 2012 |
