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Yeonghun Lee
Yeonghun Lee
在 inu.ac.kr 的电子邮件经过验证 - 首页
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First principles calculations of intrinsic mobilities in tin-based oxide semiconductors SnO, SnO2, and Ta2SnO6
Y Hu, J Hwang, Y Lee, P Conlin, DG Schlom, S Datta, K Cho
Journal of Applied Physics 126 (18), 2019
662019
EOT of 0.62 nm and high electron mobility in La-silicate/Si structure based nMOSFETs achieved by utilizing metal-inserted poly-Si stacks and annealing at high temperature
T Kawanago, Y Lee, K Kakushima, P Ahmet, K Tsutsui, A Nishiyama, ...
IEEE transactions on electron devices 59 (2), 269-276, 2011
542011
Size-dependent properties of ballistic silicon nanowire field effect transistors
Y Lee, K Kakushima, K Shiraishi, K Natori, H Iwai
Journal of Applied Physics 107 (11), 2010
342010
Surface energy-driven preferential grain growth of metal halide perovskites: Effects of nanoimprint lithography beyond direct patterning
J Moon, S Kwon, M Alahbakhshi, Y Lee, K Cho, A Zakhidov, MJ Kim, Q Gu
ACS Applied Materials & Interfaces 13 (4), 5368-5378, 2021
262021
Semiconductor device being capable of improving the breakdown characteristics
LEE Yeonghun
US Patent App. 15/074,945, 2016
252016
Gate capacitance modeling and diameter-dependent performance of nanowire MOSFETs
Y Lee, K Kakushima, K Natori, H Iwai
IEEE transactions on electron devices 59 (4), 1037-1045, 2012
232012
Ambient effect on the Curie temperatures and magnetic domains in metallic two-dimensional magnets
Z Tu, T Xie, Y Lee, J Zhou, AS Admasu, Y Gong, N Valanoor, J Cumings, ...
npj 2D Materials and Applications 5 (1), 62, 2021
212021
Effect of localization on photoluminescence and zero-field splitting of silicon color centers
V Ivanov, J Simoni, Y Lee, W Liu, K Jhuria, W Redjem, Y Zhiyenbayev, ...
Physical Review B 106 (13), 134107, 2022
202022
Gate semi-around Si nanowire FET fabricated by conventional CMOS process with very high drivability
S Sato, Y Lee, K Kakushima, P Ahmet, K Ohmori, K Natori, K Yamada, ...
2010 Proceedings of the European Solid State Device Research Conference, 361-364, 2010
202010
3-dimensional semiconductor device having memory cells stacked over substrate
Y Lee, H Heo, MG Koo, DH Lee
US Patent 9,299,447, 2016
192016
Three-dimensional semiconductor device and manufacturing method thereof
LEE Yeonghun
US Patent 9,818,758, 2017
162017
Semiconductor device and operating method thereof
LEE Yeonghun
US Patent 9,558,835, 2017
162017
Spin-defect qubits in two-dimensional transition metal dichalcogenides operating at telecom wavelengths
Y Lee, Y Hu, X Lang, D Kim, K Li, Y Ping, KMC Fu, K Cho
Nature Communications 13 (1), 7501, 2022
152022
Fundamental origin of excellent low-noise property in 3D Si-MOSFETs∼ Impact of charge-centroid in the channel due to quantum effect on 1/f noise∼
W Feng, R Hettiarachchi, Y Lee, S Sato, K Kakushima, M Sato, K Fukuda, ...
2011 International Electron Devices Meeting, 27.7. 1-27.7. 4, 2011
152011
Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process
T Kawanago, T Suzuki, Y Lee, K Kakushima, P Ahmet, K Tsutsui, ...
Solid-state electronics 68, 68-72, 2012
142012
Metal inserted poly-Si with high temperature annealing for achieving EOT of 0.62 nm in La-silicate MOSFET
T Kawanago, Y Lee, K Kakushima, P Ahmet, K Tsutsui, A Nishiyama, ...
2011 Proceedings of the European Solid-State Device Research Conference …, 2011
112011
A study on electronic structure of silicon nanowires with diverse diameters and orientations for high performance FET
Y Lee, T Nagata, K Kakushima, K Shiraishi, H Iwai
IWDTF, 83-84, 2008
112008
Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysis
Y Lee, K Kakushima, K Natori, H Iwai
Journal of Applied Physics 109 (11), 2011
102011
Real-time ab initio simulation of inelastic electron scattering using the exact, density functional, and alternative approaches
Y Lee, X Yao, MV Fischetti, K Cho
Physical Chemistry Chemical Physics 22 (16), 8616-8624, 2020
82020
Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors
Y Lee, K Kakushima, K Shiraishi, K Natori, H Iwai
Applied Physics Letters 97 (3), 2010
82010
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