| Enhanced ferroelectricity in ultrathin films grown directly on silicon SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu, J Xiao, H Zhang, ... Nature 580 (7804), 478-482, 2020 | 623 | 2020 |
| Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors SS Cheema*, N Shanker*, LC Wang, CH Hsu, SL Hsu, YH Liao, ... Nature 604 (7904), 65-71, 2022 | 156 | 2022 |
| Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles AJ Tan, YH Liao, LC Wang, N Shanker, JH Bae, C Hu, S Salahuddin IEEE Electron Device Letters 42 (7), 994-997, 2021 | 145 | 2021 |
| Photocatalysis and Hydrogen Evolution of Al- and Zn-Doped TiO2 Nanotubes Fabricated by Atomic Layer Deposition CY Su, LC Wang, WS Liu, CC Wang, TP Perng ACS applied materials & interfaces 10 (39), 33287-33295, 2018 | 80 | 2018 |
| Hot electrons as the dominant source of degradation for sub-5nm HZO FeFETs AJ Tan, M Pešić, L Larcher, YH Liao, LC Wang, JH Bae, C Hu, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 43 | 2020 |
| Electronic Band Structure and Electrocatalytic Performance of Cu3N Nanocrystals LC Wang, BH Liu, CY Su, WS Liu, CC Kei, KW Wang, TP Perng ACS Applied Nano Materials 1 (7), 3673-3681, 2018 | 37 | 2018 |
| Fully transparent field-effect transistor with high drain current and on-off ratio J Park, H Paik, K Nomoto, K Lee, BE Park, B Grisafe, LC Wang, ... APL Materials 8 (1), 2020 | 30 | 2020 |
| Fast read-after-write and depolarization fields in high endurance n-type ferroelectric FETs M Hoffmann, AJ Tan, N Shanker, YH Liao, LC Wang, JH Bae, C Hu, ... IEEE Electron Device Letters 43 (5), 717-720, 2022 | 28 | 2022 |
| Electric field-induced permittivity enhancement in negative-capacitance FET YH Liao, D Kwon, S Cheema, N Shanker, AJ Tan, MY Kao, LC Wang, ... IEEE Transactions on Electron Devices 68 (3), 1346-1351, 2021 | 13 | 2021 |
| Fabrication of TiO 2 on porous gC 3 N 4 by ALD for improved solar-driven hydrogen evolution WS Liu, LC Wang, TK Chin, YC Yen, TP Perng RSC advances 8 (54), 30642-30651, 2018 | 11 | 2018 |
| Write disturb-free ferroelectric FETs with non-accumulative switching dynamics M Hoffmann, AJ Tan, N Shanker, YH Liao, LC Wang, JH Bae, C Hu, ... IEEE Electron Device Letters 43 (12), 2097-2100, 2022 | 8 | 2022 |
| Reliability of Ferroelectric HfO2-based Memories: From MOS Capacitor to FeFET AJ Tan, LC Wang, YH Liao, JH Bae, C Hu, S Salahuddin 2020 Device Research Conference (DRC), 1-2, 2020 | 7 | 2020 |
| Enhancement in Capacitance and Transconductance in 90 nm nFETs with HfO2-ZrO2 Superlattice Gate Stack for Energy-efficient Cryo-CMOS W Li, LC Wang, SS Cheema, N Shanker, C Hu, S Salahuddin 2022 International Electron Devices Meeting (IEDM), 22.3. 1-22.3. 4, 2022 | 5 | 2022 |
| On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO 2-ZrO 2 Superlattice Gate Stack on L g= 90 nm nFETs N Shanker*, LC Wang*, S Cheema, W Li, N Choudhury, C Hu, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 5 | 2022 |
| Demonstration of Low EOT Gate Stack and Record Transconductance on nm nFETs Using 1.8 nm Ferroic HfO2-ZrO2 Superlattice W Li*, LC Wang*, SS Cheema, N Shanker, JH Park, YH Liao, SL Hsu, ... 2021 IEEE International Electron Devices Meeting (IEDM), 13.6. 1-13.6. 4, 2021 | 5 | 2021 |
| Atomic-scale ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors S Cheema*, N Shanker*, LC Wang, CH Hsu, SL Hsu, YH Liao, ... | 3 | 2021 |
| Anomalous subthreshold behaviors in negative capacitance transistors YH Liao, D Kwon, S Cheema, AJ Tan, MY Kao, LC Wang, C Hu, ... arXiv preprint arXiv:2006.02594, 2020 | 3 | 2020 |
| Publisher Correction: Enhanced ferroelectricity in ultrathin films grown directly on silicon. SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu, J Xiao, H Zhang Nature 581 (7808), E5-E5, 2020 | 3 | 2020 |
| Record Transconductance in Leff~30 nm Self-Aligned Replacement Gate ETSOI nFETs Using Low EOT Negative Capacitance HfO2-ZrO2 Superlattice Gate Stack LC Wang, W Li, N Shanker, SS Cheema, SL Hsu, S Volkman, U Sikder, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 2 | 2023 |
| Ferroelectric HfO Memory Transistors with High- Interfacial Layer and Write Endurance Exceeding Cycles A Jiang Tan, YH Liao, LC Wang, JH Bae, C Hu, S Salahuddin arXiv e-prints, arXiv: 2103.08806, 2021 | | 2021 |
Sayeef SalahuddinTSMC Distinguished Professor of EECS, University of California, Berkeley在 berkeley.edu 的电子邮件经过验证
