| Functionalization of transition metal dichalcogenides with metallic nanoparticles: implications for doping and gas-sensing D Sarkar, X Xie, J Kang, H Zhang, W Liu, J Navarrete, M Moskovits, ... Nano letters 15 (5), 2852-2862, 2015 | 384 | 2015 |
| Intercalation doped multilayer-graphene-nanoribbons for next-generation interconnects J Jiang, J Kang, W Cao, X Xie, H Zhang, JH Chu, W Liu, K Banerjee Nano letters 17 (3), 1482-1488, 2017 | 155 | 2017 |
| A comparative study of the laser performance of diode-laser-pumped Nd: GdVO4 and Nd: YVO4 crystals CQ Wang, YT Chow, L Reekie, WA Gambling, HJ Zhang, L Zhu, XL Meng Applied Physics B 70, 769-772, 2000 | 84 | 2000 |
| Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication M Khoury, H Li, P Li, YC Chow, B Bonef, H Zhang, MS Wong, S Pinna, ... Nano Energy 67, 104236, 2020 | 62 | 2020 |
| Size-independent peak external quantum efficiency (> 2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm P Li, H Li, H Zhang, C Lynsky, M Iza, JS Speck, S Nakamura, ... Applied Physics Letters 119 (8), 2021 | 57 | 2021 |
| Red InGaN micro-light-emitting diodes (> 620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact P Li, H Li, H Zhang, Y Yang, MS Wong, C Lynsky, M Iza, MJ Gordon, ... Applied Physics Letters 120 (12), 2022 | 53 | 2022 |
| Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template H Li, MS Wong, M Khoury, B Bonef, H Zhang, YC Chow, P Li, J Kearns, ... Optics Express 27 (17), 24154-24160, 2019 | 50 | 2019 |
| Continuous-wave operation of a semipolar InGaN distributed-feedback blue laser diode with a first-order indium tin oxide surface grating H Zhang, DA Cohen, P Chan, MS Wong, S Mehari, DL Becerra, ... Optics Letters 44 (12), 3106-3109, 2019 | 37 | 2019 |
| Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition P Li, H Zhang, H Li, M Iza, Y Yao, MS Wong, N Palmquist, JS Speck, ... Optics Express 28 (13), 18707-18712, 2020 | 35 | 2020 |
| Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage P Li, H Zhang, H Li, Y Zhang, Y Yao, N Palmquist, M Iza, JS Speck, ... Semiconductor Science and Technology 35 (12), 125023, 2020 | 32 | 2020 |
| High-temperature electroluminescence properties of InGaN red 40× 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2% P Li, A David, H Li, H Zhang, C Lynsky, Y Yang, M Iza, JS Speck, ... Applied Physics Letters 119 (23), 2021 | 31 | 2021 |
| Progress of InGaN-based red micro-light emitting diodes P Li, H Li, MS Wong, P Chan, Y Yang, H Zhang, M Iza, JS Speck, ... Crystals 12 (4), 541, 2022 | 29 | 2022 |
| Demonstration of high efficiency cascaded blue and green micro-light-emitting diodes with independent junction control P Li, H Li, Y Yao, H Zhang, C Lynsky, KS Qwah, JS Speck, S Nakamura, ... Applied Physics Letters 118 (26), 2021 | 25 | 2021 |
| Demonstration of ultra-small 5× 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2% P Li, H Li, Y Yang, H Zhang, P Shapturenka, M Wong, C Lynsky, M Iza, ... Applied Physics Letters 120 (4), 2022 | 24 | 2022 |
| Effect of band-tails on the subthreshold performance of 2D tunnel-FETs H Zhang, W Cao, J Kang, K Banerjee 2016 IEEE International Electron Devices Meeting (IEDM), 30.3. 1-30.3. 4, 2016 | 20 | 2016 |
| Nano-porous GaN cladding and scattering loss in edge emitting laser diodes R Anderson, D Cohen, H Zhang, E Trageser, N Palmquist, S Nakamura, ... Optics Express 30 (2), 2759-2767, 2022 | 19 | 2022 |
| High polarization and fast modulation speed of dual wavelengths electroluminescence from semipolar (20-21) micro light-emitting diodes with indium tin oxide surface grating H Zhang, P Li, H Li, J Song, S Nakamura, SP DenBaars Applied Physics Letters 117 (18), 2020 | 19 | 2020 |
| Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate H Li, P Li, H Zhang, YC Chow, MS Wong, S Pinna, J Klamkin, JS Speck, ... Optics express 28 (9), 13569-13575, 2020 | 19 | 2020 |
| 560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates M Khoury, H Li, B Bonef, T Mates, F Wu, P Li, MS Wong, H Zhang, J Song, ... Optics Express 28 (12), 18150-18159, 2020 | 18 | 2020 |
| Demonstration of electrically injected semipolar laser diodes grown on low-cost and scalable sapphire substrates M Khoury, H Li, H Zhang, B Bonef, MS Wong, F Wu, D Cohen, P De Mierry, ... ACS applied materials & interfaces 11 (50), 47106-47111, 2019 | 18 | 2019 |
Panpan LiUniversity of California, Santa Barbara在 ucsb.edu 的电子邮件经过验证
