| The hydrogen content of a-Ge: H and a-Si: H as determined by IR spectroscopy, gas evolution and nuclear reaction techniques CJ Fang, KJ Gruntz, L Ley, M Cardona, FJ Demond, G Müller, S Kalbitzer Journal of Non-Crystalline Solids 35, 255-260, 1980 | 928* | 1980 |
| Gas-kinetic interactions of nitrous oxides with SnO2 surfaces B Ruhland, T Becker, G Müller Sensors and Actuators B: Chemical 50 (1), 85-94, 1998 | 323 | 1998 |
| Hydrogen response mechanism of Pt–GaN Schottky diodes J Schalwig, G Müller, U Karrer, M Eickhoff, O Ambacher, M Stutzmann, ... Applied Physics Letters 80 (7), 1222-1224, 2002 | 278 | 2002 |
| Gas sensitive GaN/AlGaN-heterostructures J Schalwig, G Müller, M Eickhoff, O Ambacher, M Stutzmann Sensors and Actuators B: Chemical 87 (3), 425-430, 2002 | 276 | 2002 |
| GaN-based heterostructures for sensor applications M Stutzmann, G Steinhoff, M Eickhoff, O Ambacher, CE Nebel, J Schalwig, ... Diamond and related materials 11 (3-6), 886-891, 2002 | 243 | 2002 |
| A rate equation approach to the gas sensitivity of thin film metal oxide materials S Ahlers, G Müller, T Doll Sensors and Actuators B: Chemical 107 (2), 587-599, 2005 | 209 | 2005 |
| Gas sensing properties of thin-and thick-film tin-oxide materials T Becker, S Ahlers, CB Braunmühl, G Müller, O Kiesewetter Sensors and Actuators B: Chemical 77 (1-2), 55-61, 2001 | 201 | 2001 |
| Group‐III‐nitride based gas sensing devices J Schalwig, G Müller, O Ambacher, M Stutzmann physica status solidi (a) 185 (1), 39-45, 2001 | 200 | 2001 |
| High‐electron‐mobility AlGaN/GaN transistors (HEMTs) for fluid monitoring applications R Neuberger, G Müller, O Ambacher, M Stutzmann physica status solidi (a) 185 (1), 85-89, 2001 | 172 | 2001 |
| Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures–Part B: Sensor applications M Eickhoff, J Schalwig, G Steinhoff, O Weidemann, L Görgens, ... physica status solidi (c), 1908-1918, 2003 | 169 | 2003 |
| Air pollution monitoring using tin-oxide-based microreactor systems T Becker, ST Mühlberger, CB Braunmühl, G Müller, T Ziemann, ... Sensors and Actuators B: Chemical 69 (1-2), 108-119, 2000 | 151 | 2000 |
| Silicon hotplates for metal oxide gas sensor elements G Sberveglieri, W Hellmich, G Müller Microsystem Technologies 3, 183-190, 1997 | 135 | 1997 |
| Group III-nitride-based gas sensors for combustion monitoring J Schalwig, G Müller, M Eickhoff, O Ambacher, M Stutzmann Materials Science and Engineering: B 93 (1-3), 207-214, 2002 | 133 | 2002 |
| Optical pressure sensor based on a Mach-Zehnder interferometer integrated with a lateral a-Si: H pin photodiode C Wagner, J Frankenberger, PP Deimel IEEE photonics technology letters 5 (10), 1257-1259, 1993 | 130* | 1993 |
| SiC for sensors and high-temperature electronics G Müller, G Krötz, E Niemann Sensors and Actuators A: Physical 43 (1-3), 259-268, 1994 | 120 | 1994 |
| High-temperature MEMS heater platforms: long-term performance of metal and semiconductor heater materials J Spannhake, O Schulz, A Helwig, A Krenkow, G Müller, T Doll Sensors 6 (4), 405-419, 2006 | 109 | 2006 |
| A chemical-bond approach to doping, compensation and photo-induced degradation in amorphous silicon G Müller, S Kalbitzer, H Mannsperger Applied Physics A 39 (4), 243-250, 1986 | 108 | 1986 |
| Response mechanism of SiC-based MOS field-effect gas sensors J Schalwig, P Kreisl, S Ahlers, G Muller IEEE Sensors Journal 2 (5), 394-402, 2002 | 104 | 2002 |
| The effects of ion implantation on the electrical properties of amorphous silicon S Kalbitzer, G Müller, PG Le Comber, WE Spear Philosophical Magazine B 41 (4), 439-456, 1980 | 104 | 1980 |
| Contribution of defects to electronic, structural, and thermodynamic properties of amorphous silicon PA Stolk, FW Saris, AJM Berntsen, WF Van der Weg, LT Sealy, RC Barklie, ... Journal of Applied Physics 75 (11), 7266-7286, 1994 | 99 | 1994 |
Martin EickhoffInstitut für Festkörperphysik, Universität Bremen在 ifp.uni-bremen.de 的电子邮件经过验证
