| High‐Efficiency PbS Quantum‐Dot Solar Cells with Greatly Simplified Fabrication Processing via “Solvent‐Curing” K Lu, Y Wang, Z Liu, L Han, G Shi, H Fang, J Chen, X Ye, S Chen, F Yang, ... Advanced Materials 30 (25), 1707572, 2018 | 185 | 2018 |
| Room-temperature direct synthesis of semi-conductive PbS nanocrystal inks for optoelectronic applications Y Wang, Z Liu, N Huo, F Li, M Gu, X Ling, Y Zhang, K Lu, L Han, H Fang, ... Nature communications 10 (1), 5136, 2019 | 139 | 2019 |
| Comparing halide ligands in PbS colloidal quantum dots for field-effect transistors and solar cells D Bederak, DM Balazs, NV Sukharevska, AG Shulga, M Abdu-Aguye, ... ACS applied nano materials 1 (12), 6882-6889, 2018 | 75 | 2018 |
| High gain hybrid graphene–organic semiconductor phototransistors EH Huisman, AG Shulga, PJ Zomer, N Tombros, D Bartesaghi, SZ Bisri, ... ACS applied materials & interfaces 7 (21), 11083-11088, 2015 | 73 | 2015 |
| Double gate PbS quantum dot field‐effect transistors for tuneable electrical characteristics AG Shulga, L Piveteau, SZ Bisri, MV Kovalenko, MA Loi Advanced electronic materials 2 (4), 1500467, 2016 | 66 | 2016 |
| Electron Mobility of 24 cm2 V−1 s−1 in PbSe Colloidal‐Quantum‐Dot Superlattices DM Balazs, BM Matysiak, J Momand, AG Shulga, M Ibáñez, ... Advanced Materials 30 (38), 1802265, 2018 | 58 | 2018 |
| Electroluminescence generation in PbS quantum dot light-emitting field-effect transistors with solid-state gating AG Shulga, S Kahmann, DN Dirin, A Graf, J Zaumseil, MV Kovalenko, ... ACS nano 12 (12), 12805-12813, 2018 | 51 | 2018 |
| Quantum dot light‐emitting transistors—powerful research tools and their future applications S Kahmann, A Shulga, MA Loi Advanced Functional Materials 30 (20), 1904174, 2020 | 43 | 2020 |
| An All‐Solution‐Based Hybrid CMOS‐Like Quantum Dot/Carbon Nanotube Inverter AG Shulga, V Derenskyi, JM Salazar‐Rios, DN Dirin, M Fritsch, ... Advanced Materials 29 (35), 1701764, 2017 | 43 | 2017 |
| PbSe Nanorod Field‐Effect Transistors: Room‐and Low‐Temperature Performance L Han, DM Balazs, AG Shulga, M Abdu‐Aguye, W Ma, MA Loi Advanced Electronic Materials 4 (3), 1700580, 2018 | 19 | 2018 |
| Patterned quantum dot photosensitive FETs for medium frequency optoelectronics AG Shulga, A Yamamura, K Tsuzuku, RM Dragoman, DN Dirin, ... Advanced Materials Technologies 4 (9), 1900054, 2019 | 12 | 2019 |
| Heterostructure from PbS Quantum Dot and Carbon Nanotube Inks for High‐Efficiency Near‐Infrared Light‐Emitting Field‐Effect Transistors D Bederak, A Shulga, S Kahmann, W Talsma, J Pelanskis, DN Dirin, ... Advanced Electronic Materials 8 (7), 2101126, 2022 | 9 | 2022 |
| Roadmap on printable electronic materials for next-generation sensors V Pecunia, L Petti, J Andrews, R Ollearo, GH Gelinck, B Nasrollahi, ... Nano Futures, 2024 | 3 | 2024 |
| Colloidal quantum dot field-effect transistors: From electronic circuits to light emission and detection AG Shulga | 1 | 2019 |
| Colloidal nanoparticle inks for printing of active layers in an optoelectronic device MA Loi, AG Shulga, DY Bederak US Patent App. 17/801,651, 2023 | | 2023 |
| Imaging device based on colloidal quantum dots AG Shulga, MA Loi US Patent App. 17/186,181, 2021 | | 2021 |
| Colloidal quantum dot field-effect transistors AG Shulga | | 2019 |
| Carbon Nanotubes: An All‐Solution‐Based Hybrid CMOS‐Like Quantum Dot/Carbon Nanotube Inverter (Adv. Mater. 35/2017) AG Shulga, V Derenskyi, JM Salazar‐Rios, DN Dirin, M Fritsch, ... Advanced Materials 29 (35), 2017 | | 2017 |
| Article type: Communication DM Balazs, BM Matysiak, J Momand, AG Shulga, M Ibáñez, ... | | |
| 6. Electron mobility above 24 cm 2/Vs in PbSe colloidal quantum dot superlattices DM Balazs, BM Matysiak, J Momand, AG Shulga, M Ibanez, ... | | |
