| Calculation of transmission tunneling current across arbitrary potential barriers Y Ando, T Itoh Journal of applied physics 61 (4), 1497-1502, 1987 | 636 | 1987 |
| 10-W/mm AlGaN-GaN HFET with a field modulating plate Y Ando, Y Okamoto, H Miyamoto, T Nakayama, T Inoue, M Kuzuhara IEEE Electron Device Letters 24 (5), 289-291, 2003 | 393 | 2003 |
| Improved power performance for a recessed-gate AlGaN-GaN heterojunction FET with a field-modulating plate Y Okamoto, Y Ando, K Hataya, T Nakayama, H Miyamoto, T Inoue, ... IEEE Transactions on Microwave theory and techniques 52 (11), 2536-2540, 2004 | 132 | 2004 |
| A normally-off GaN FET with high threshold voltage uniformity using a novel piezo neutralization technique K Ota, K Endo, Y Okamoto, Y Ando, H Miyamoto, H Shimawaki 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 131 | 2009 |
| High-power recessed-gate AlGaN-GaN HFET with a field-modulating plate Y Okamoto, Y Ando, T Nakayama, K Hataya, H Miyamoto, T Inoue, ... IEEE Transactions on Electron Devices 51 (12), 2217-2222, 2004 | 103 | 2004 |
| Effects of postmetallization annealing on interface properties of Al2O3/GaN structures T Hashizume, S Kaneki, T Oyobiki, Y Ando, S Sasaki, K Nishiguchi Applied Physics Express 11 (12), 124102, 2018 | 79 | 2018 |
| 30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs T Inoue, Y Ando, H Miyamoto, T Nakayama, Y Okamoto, K Hataya, ... IEEE transactions on microwave theory and techniques 53 (1), 74-80, 2005 | 77 | 2005 |
| A 110-W AlGaN/GaN heterojunction FET on thinned sapphire substrate Y Ando, Y Okamoto, H Miyamoto, N Hayama, T Nakayama, K Kasahara, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 76 | 2001 |
| Analysis of charge control in pseudomorphic two-dimensional electron gas field-effect transistors Y Ando, T Itoh IEEE transactions on electron devices 35 (12), 2295-2301, 1988 | 65 | 1988 |
| DC, small-signal, and noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge-control characteristics Y Ando, T Itoh IEEE transactions on electron devices 37 (1), 67-78, 1990 | 57 | 1990 |
| Ka-band 2.3 W power AlGaN/GaN heterojunction FET K Kasahara, H Miyamoto, Y Ando, Y Okamoto, T Nakayama, M Kuzuhara Digest. International Electron Devices Meeting,, 677-680, 2002 | 56 | 2002 |
| Improved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates Y Ando, S Kaneki, T Hashizume Applied Physics Express 12 (2), 024002, 2019 | 48 | 2019 |
| Novel AlGaN/GaN dual-field-plate FET with high gain, increased linearity and stability Y Ando, A Wakejima, Y Okamoto, T Nakayama, K Ota, K Yamanoguchi, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 47 | 2005 |
| High‐voltage rf operation of AlGaN/GaN heterojunction FETs M Kuzuhara, H Miyamoto, Y Ando, T Inoue, Y Okamoto, T Nakayama physica status solidi (a) 200 (1), 161-167, 2003 | 42 | 2003 |
| Low-contact-resistance and smooth-surface Ti∕ Al∕ Nb∕ Au ohmic electrode on AlGaN∕ GaN heterostructure T Nakayama, H Miyamoto, Y Ando, Y Okamoto, T Inoue, K Hataya, ... Applied physics letters 85 (17), 3775-3776, 2004 | 41 | 2004 |
| New resonant tunneling diode with a deep quantum-well H Toyoshima, Y Ando, A Okamoto, T Itoh Japanese journal of applied physics 25 (9A), L786, 1986 | 41 | 1986 |
| T-Shaped Gate GaN HFETs on Si With Improved Breakdown Voltage and Y Murase, K Asano, I Takenaka, Y Ando, H Takahashi, C Sasaoka IEEE electron device letters 35 (5), 524-526, 2014 | 40 | 2014 |
| 370 W output power GaN-FET amplifier for W-CDMA cellular base stations A Wakejima, K Matsunaga, Y Okamoto, Y Ando, T Nakayama, ... Electronics letters 41 (25), 1371-1372, 2005 | 39 | 2005 |
| 100W C-band single-chip GaN FET power amplifier Y Okamoto, A Wakejima, Y Ando, T Nakayama, K Matsunaga, ... Electronics Letters 42 (5), 1, 2006 | 38 | 2006 |
| 12 W/mm recessed-gate AlGaN/GaN heterojunction field-plate FET Y Ando, Y Okamoto, K Hataya, T Nakayama, H Miyamoto, T Inoue, ... IEEE International Electron Devices Meeting 2003, 23.1. 1-23.1. 4, 2003 | 38 | 2003 |
