| A wideband power amplifier MMIC utilizing GaN on SiC HEMT technology C Campbell, C Lee, V Williams, MY Kao, HQ Tserng, P Saunier, ... IEEE Journal of Solid-state circuits 44 (10), 2640-2647, 2009 | 207 | 2009 |
| TEM observation of crack-and pit-shaped defects in electrically degraded GaN HEMTs U Chowdhury, JL Jimenez, C Lee, E Beam, P Saunier, T Balistreri, ... IEEE Electron Device Letters 29 (10), 1098-1100, 2008 | 205 | 2008 |
| Gallium nitride on high thermal conductivity material device and method X Gu, J Xie, EA Beam III, DC Dumka, CC Lee US Patent 9,337,278, 2016 | 192 | 2016 |
| Physical degradation of GaN HEMT devices under high drain bias reliability testing SY Park, C Floresca, U Chowdhury, JL Jimenez, C Lee, E Beam, ... Microelectronics Reliability 49 (5), 478-483, 2009 | 131 | 2009 |
| Low thermal boundary resistance interfaces for GaN-on-diamond devices L Yates, J Anderson, X Gu, C Lee, T Bai, M Mecklenburg, T Aoki, ... ACS applied materials & interfaces 10 (28), 24302-24309, 2018 | 129 | 2018 |
| Barrier-layer optimization for enhanced GaN-on-diamond device cooling Y Zhou, J Anaya, J Pomeroy, H Sun, X Gu, A Xie, E Beam, M Becker, ... ACS applied materials & interfaces 9 (39), 34416-34422, 2017 | 122 | 2017 |
| AlGaN/GaN HEMTs on Si substrate with 7 W/mm output power density at 10 GHz DC Dumka, C Lee, HQ Tserng, P Saunier, M Kumar Electronics Letters 40 (16), 1023-1024, 2004 | 113 | 2004 |
| Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs J Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ... IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015 | 112 | 2015 |
| Effects of AlGaN/GaN HEMT structure on RF reliability C Lee, L Witkowski, HQ Tserng, P Saunier, R Birkhahn, D Olson, D Olson, ... Electronics Letters 41 (3), 155-157, 2005 | 100 | 2005 |
| ScAlN/GaN high-electron-mobility transistors with 2.4-A/mm current density and 0.67-S/mm transconductance AJ Green, JK Gillespie, RC Fitch, DE Walker, M Lindquist, A Crespo, ... IEEE Electron Device Letters 40 (7), 1056-1059, 2019 | 86 | 2019 |
| AlGaN-GaN HEMTs on SiC with CW power performance of> 4 W/mm and 23% PAE at 35 GHz C Lee, P Saunier, J Yang, MA Khan IEEE Electron Device Letters 24 (10), 616-618, 2003 | 74 | 2003 |
| Wideband power amplifier MMICs utilizing GaN on SiC E Reese, D Allen, C Lee, T Nguyen 2010 IEEE MTT-S International Microwave Symposium, 1230-1233, 2010 | 72 | 2010 |
| 25W X-band GaN on Si MMIC DM Fanning, LC Witkowski, C Lee, DC Dumka, HQ Tserng, P Saunier, ... GaAs Man. Tech. Digest, 2005 | 59 | 2005 |
| Analytical HFET–Model in Presence of Current Collapse A Koudymov, MS Shur, G Simin, K Chu, PC Chao, C Lee, J Jimenez, ... IEEE Transactions on Electron Devices 55 (3), 712-720, 2008 | 58 | 2008 |
| RF power performance of Sc (al, Ga) N/GaN HEMTs at Ka-band AJ Green, N Moser, NC Miller, KJ Liddy, M Lindquist, M Elliot, JK Gillespie, ... IEEE Electron Device Letters 41 (8), 1181-1184, 2020 | 55 | 2020 |
| Progress in GaN performances and reliability P Saunier, C Lee, A Balistreri, D Dumka, J Jimenez, HQ Tserng, MY Kao, ... 2007 65th Annual Device Research Conference, 35-36, 2007 | 49 | 2007 |
| Effects of RF stress on power and pulsed IV characteristics of AlGaN/GaN HEMTs with field-plate gates C Lee, H Tserng, L Witkowski, P Saunier, S Guo, B Albert, R Birkhahn, ... Electronics Letters 40 (24), 1, 2004 | 39 | 2004 |
| AlGaN/GaN HEMTs with PAE of 53% at 35 GHz for HPA and multi-function MMIC applications MY Kao, C Lee, R Hajji, P Saunier, HQ Tserng 2007 IEEE/MTT-S International Microwave Symposium, 627-629, 2007 | 38 | 2007 |
| State-of-art CW power density achieved at 26 GHz by AlGaN/GaN HEMTs C Lee, H Wang, J Yang, L Witkowski, M Muir, MA Khan, P Saunier Electronics Letters 38 (16), 924-925, 2002 | 37 | 2002 |
| Polarization engineering of AlGaN/GaN HEMT with graded InGaN sub-channel for high-linearity X-band applications SH Sohel, A Xie, E Beam, H Xue, T Razzak, S Bajaj, Y Cao, C Lee, W Lu, ... IEEE Electron Device Letters 40 (4), 522-525, 2019 | 36 | 2019 |
