Thomas Tiedje 个人学术档案

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	总计	2019 年至今
引用	16256	2968
h 指数	62	27
i10 指数	187	54

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Sebastien TixierHoneywell在 telus.net 的电子邮件经过验证
Shane R JohnsonArizona State University在 asu.edu 的电子邮件经过验证
Erin C. YoungUniversity of California, Santa Barbara在 engineering.ucsb.edu 的电子邮件经过验证
Ryan B. LewisMcMaster University在 mcmaster.ca 的电子邮件经过验证
Dan Beaton, Daniel Beaton, Daniel A...University of British Columbia, National Renewable Energy Lab, St. Francis Xavier在 nrel.gov 的电子邮件经过验证
Sebastien FrancoeurPolytechnique Montreal在 polymtl.ca 的电子邮件经过验证
Christian LavoieIBM T.J. Watson Research Center在 us.ibm.com 的电子邮件经过验证
Mostafa MasnadiElectrical and Computer Engineering, University of British Columbia在 ece.ubc.ca 的电子邮件经过验证
Vahid Bahrami YektaPhD University of Victoria在 UVIC.CA 的电子邮件经过验证
Wolfgang EberhardtDESY在 bessy.de 的电子邮件经过验证
Jens H SchmidSenior Research Officer, National Research Council Canada在 nrc-cnrc.gc.ca 的电子邮件经过验证
Ben RuckAssociate Professor, Victoria University of Wellington在 vuw.ac.nz 的电子邮件经过验证
Jeff DahnProfessor of Physics and Atmospheric Science, Dalhousie University在 dal.ca 的电子邮件经过验证
Mario BeaudoinResearch Associate, University of British Columbia在 physics.ubc.ca 的电子邮件经过验证
François SchiettekatteUniversité de Montréal在 umontreal.ca 的电子邮件经过验证
Jeff F. YoungProfessor of Physics and Astronomy, University of British Columbia在 phas.ubc.ca 的电子邮件经过验证
Sangam ChatterjeeInstitute for Experimental Physics I, Justus-Liebig-University Giessen在 physik.uni-giessen.de 的电子邮件经过验证
Alexey ChernikovDresden University of Technology (TU Dresden), University of Regensburg在 tu-dresden.de 的电子邮件经过验证
Don MorelProfessor of Electrical Engineering, University of South Florida在 usf.edu 的电子邮件经过验证
Stephan W. KochProfessor, Fachbereich Physik, Philipps Universitaet Marburg, Renthof 5, Germany在 physik.uni-marburg.de 的电子邮件经过验证

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Thomas Tiedje

Electrical and Computer Engineering, University of Victoria, Victoria, BC

在 uvic.ca 的电子邮件经过验证

Semiconductor materials Photovoltaics


标题按引用次数排序按年份排序按标题排序	引用次数引用次数	年份
Disorder and the optical-absorption edge of hydrogenated amorphous silicon GD Cody, T Tiedje, B Abeles, B Brooks, Y Goldstein Physical Review Letters 47 (20), 1480, 1981	1385	1981
Limiting efficiency of silicon solar cells TOM Tiedje, ELI Yablonovitch, GD Cody, BG Brooks IEEE Transactions on electron devices 31 (5), 711-716, 1984	1162	1984
A physical interpretation of dispersive transport in disordered semiconductors T Tiedje, A Rose Solid State Communications 37 (1), 49-52, 1981	881	1981
Evidence for exponential band tails in amorphous silicon hydride T Tiedje, JM Cebulka, DL Morel, B Abeles Physical Review Letters 46 (21), 1425, 1981	620	1981
Amorphous semiconductor superlattices B Abeles, T Tiedje Physical Review Letters 51 (21), 2003, 1983	586	1983
Molecular beam epitaxy growth of S Tixier, M Adamcyk, T Tiedje, S Francoeur, A Mascarenhas, P Wei, ... Applied physics letters 82 (14), 2245-2247, 2003	521	2003
Band gap of S Francoeur, MJ Seong, A Mascarenhas, S Tixier, M Adamcyk, T Tiedje Applied physics letters 82 (22), 3874-3876, 2003	498	2003
Giant spin-orbit bowing in GaAs 1− x Bi x B Fluegel, S Francoeur, A Mascarenhas, S Tixier, EC Young, T Tiedje Physical review letters 97 (6), 067205, 2006	491	2006
Temperature dependence of the Urbach edge in GaAs SR Johnson, T Tiedje Journal of applied physics 78 (9), 5609-5613, 1995	241	1995
Field-emission SEM imaging of compositional and doping layer semiconductor superlattices DD Perovic, MR Castell, A Howie, C Lavoie, T Tiedje, JSW Cole Ultramicroscopy 58 (1), 104-113, 1995	228	1995
Laser Stark spectroscopy in the 10 [mu] m region: The [nu] 3 bands of CH3F SM Freund, G Duxbury, M Romheld, JT Tiedje, T Oka Journal of Molecular Spectroscopy 52 (1), 38-57, 1974	225	1974
The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing Z Batool, K Hild, TJC Hosea, X Lu, T Tiedje, SJ Sweeney Journal of Applied Physics 111 (11), 2012	222	2012
Composition dependence of photoluminescence of GaAs1− xBix alloys X Lu, DA Beaton, RB Lewis, T Tiedje, Y Zhang Applied Physics Letters 95 (4), 2009	221	2009
Optical absorption edge of semi-insulating GaAs and InP at high temperatures M Beaudoin, AJG DeVries, SR Johnson, H Laman, T Tiedje Applied Physics Letters 70 (26), 3540-3542, 1997	219	1997
Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1− xBix X Lu, DA Beaton, RB Lewis, T Tiedje, MB Whitwick Applied Physics Letters 92 (19), 2008	211	2008
Growth of high Bi concentration GaAs1− xBix by molecular beam epitaxy RB Lewis, M Masnadi-Shirazi, T Tiedje Applied Physics Letters 101 (8), 2012	193	2012
Observation of leaky slab modes in an air-bridged semiconductor waveguide with a two-dimensional photonic lattice M Kanskar, P Paddon, V Pacradouni, R Morin, A Busch, JF Young, ... Applied physics letters 70 (11), 1438-1440, 1997	193	1997
Recombination centers in phosphorous doped hydrogenated amorphous silicon CR Wronski, B Abeles, T Tiedje, GD Cody Solid State Communications 44 (10), 1423-1426, 1982	175	1982
Preparation and characterization of B x C 1− x thin films with the graphite structure BM Way, JR Dahn, T Tiedje, K Myrtle, M Kasrai Physical Review B 46 (3), 1697, 1992	172	1992
Electron mobility in dilute GaAs bismide and nitride alloys measured by time-resolved terahertz spectroscopy DG Cooke, FA Hegmann, EC Young, T Tiedje Applied physics letters 89 (12), 2006	162	2006

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