| Electronic properties of hydrogenated silicene and germanene M Houssa, E Scalise, K Sankaran, G Pourtois, VV Afanas’Ev, A Stesmans Applied Physics Letters 98 (22), 2011 | 498 | 2011 |
| Thickness dependence of the resistivity of platinum-group metal thin films S Dutta, K Sankaran, K Moors, G Pourtois, S Van Elshocht, J Bömmels, ... Journal of Applied Physics 122 (2), 2017 | 188 | 2017 |
| band gap of ZnO: Effects of plasmon-pole models M Stankovski, G Antonius, D Waroquiers, A Miglio, H Dixit, K Sankaran, ... Physical Review B 84 (24), 241201, 2011 | 125 | 2011 |
| First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism S Clima, YY Chen, R Degraeve, M Mees, K Sankaran, B Govoreanu, ... Applied Physics Letters 100 (13), 2012 | 100 | 2012 |
| Alternative metals for advanced interconnects C Adelmann, LG Wen, AP Peter, YK Siew, K Croes, J Swerts, M Popovici, ... IEEE International Interconnect Technology Conference, 173-176, 2014 | 88 | 2014 |
| Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system L Goux, K Sankaran, G Kar, N Jossart, K Opsomer, R Degraeve, ... 2012 Symposium on VLSI Technology (VLSIT), 69-70, 2012 | 62 | 2012 |
| BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap J Swerts, S Mertens, T Lin, S Couet, Y Tomczak, K Sankaran, G Pourtois, ... Applied Physics Letters 106 (26), 2015 | 57 | 2015 |
| Exploring alternative metals to Cu and W for interconnects applications using automated first-principles simulations K Sankaran, S Clima, M Mees, G Pourtois ECS Journal of Solid State Science and Technology 4 (1), N3127, 2014 | 53 | 2014 |
| RRAMs based on anionic and cationic switching: a short overview S Clima, K Sankaran, YY Chen, A Fantini, U Celano, A Belmonte, L Zhang, ... physica status solidi (RRL)–Rapid Research Letters 8 (6), 501-511, 2014 | 52 | 2014 |
| Analysis and modeling of the high vacuum scanning spreading resistance microscopy nanocontact on silicon P Eyben, F Clemente, K Vanstreels, G Pourtois, T Clarysse, E Duriau, ... Journal of Vacuum Science & Technology B 28 (2), 401-406, 2010 | 50 | 2010 |
| Modeling of copper diffusion in amorphous aluminum oxide in CBRAM memory stack K Sankaran, L Goux, S Clima, M Mees, JA Kittl, M Jurczak, L Altimime, ... ECS Transactions 45 (3), 317, 2012 | 46 | 2012 |
| Ab initio screening of metallic MAX ceramics for advanced interconnect applications K Sankaran, K Moors, Z Tőkei, C Adelmann, G Pourtois Physical review materials 5 (5), 056002, 2021 | 31 | 2021 |
| Properties of ultrathin molybdenum films for interconnect applications V Founta, JP Soulié, K Sankaran, K Vanstreels, K Opsomer, P Morin, ... Materialia 24, 101511, 2022 | 27 | 2022 |
| First-principles modeling of intrinsic and extrinsic defects in γ-Al2O3 K Sankaran, G Pourtois, R Degraeve, MB Zahid, GM Rignanese, ... Applied Physics Letters 97 (21), 2010 | 23 | 2010 |
| Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance Y Tomczak, J Swerts, S Mertens, T Lin, S Couet, E Liu, K Sankaran, ... Applied Physics Letters 108 (4), 2016 | 22 | 2016 |
| Inflection points in interconnect research and trends for 2nm and beyond in order to solve the RC bottleneck Z Tőkei, V Vega, G Murdoch, M O’Toole, K Croes, R Baert, ... 2020 IEEE International Electron Devices Meeting (IEDM), 32.2. 1-32.2. 4, 2020 | 20 | 2020 |
| Experimental observation of back-hopping with reference layer flipping by high-voltage pulse in perpendicular magnetic tunnel junctions W Kim, S Couet, J Swerts, T Lin, Y Tomczak, L Souriau, D Tsvetanova, ... IEEE Transactions on Magnetics 52 (7), 1-4, 2016 | 20 | 2016 |
| Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations A Dabral, G Pourtois, K Sankaran, W Magnus, H Yu, AJ de Meux, AKA Lu, ... ECS Journal of Solid State Science and Technology 7 (6), N73, 2018 | 15 | 2018 |
| Resistivity scaling model for metals with conduction band anisotropy M De Clercq, K Moors, K Sankaran, G Pourtois, S Dutta, C Adelmann, ... Physical Review Materials 2 (3), 033801, 2018 | 13 | 2018 |
| Oscillatory behavior of the tunnel magnetoresistance due to thickness variations in Ta| CoFe| MgO magnetic tunnel junctions: A first-principles study K Sankaran, J Swerts, S Couet, K Stokbro, G Pourtois Physical Review B 94 (9), 094424, 2016 | 13 | 2016 |
geoffrey pourtoisimec在 imec.be 的电子邮件经过验证
