| Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies B Narasimham, BL Bhuva, RD Schrimpf, LW Massengill, MJ Gadlage, ... IEEE Transactions on Nuclear Science 54 (6), 2506-2511, 2007 | 228 | 2007 |
| Single-event transient pulse quenching in advanced CMOS logic circuits JR Ahlbin, LW Massengill, BL Bhuva, B Narasimham, MJ Gadlage, ... IEEE Transactions on Nuclear Science 56 (6), 3050-3056, 2009 | 198 | 2009 |
| On-chip characterization of single-event transient pulsewidths B Narasimham, V Ramachandran, BL Bhuva, RD Schrimpf, AF Witulski, ... IEEE Transactions on Device and Materials Reliability 6 (4), 542-549, 2006 | 173 | 2006 |
| Scaling trends in SET pulse widths in sub-100 nm bulk CMOS processes MJ Gadlage, JR Ahlbin, B Narasimham, BL Bhuva, LW Massengill, ... IEEE Transactions on Nuclear Science 57 (6), 3336-3341, 2010 | 119 | 2010 |
| Impact of technology scaling on SRAM soft error rates I Chatterjee, B Narasimham, NN Mahatme, BL Bhuva, RA Reed, ... IEEE Transactions on Nuclear Science 61 (6), 3512-3518, 2014 | 95 | 2014 |
| The contribution of low-energy protons to the total on-orbit SEU rate NA Dodds, MJ Martinez, PE Dodd, MR Shaneyfelt, FW Sexton, JD Black, ... IEEE Transactions on Nuclear Science 62 (6), 2440-2451, 2015 | 90 | 2015 |
| Electron-induced single-event upsets in static random access memory MP King, RA Reed, RA Weller, MH Mendenhall, RD Schrimpf, ... IEEE Transactions on Nuclear Science 60 (6), 4122-4129, 2013 | 82 | 2013 |
| Effects of guard bands and well contacts in mitigating long SETs in advanced CMOS processes B Narasimham, BL Bhuva, RD Schrimpf, LW Massengill, MJ Gadlage, ... IEEE Transactions on Nuclear Science 55 (3), 1708-1713, 2008 | 80 | 2008 |
| Quantifying the effect of guard rings and guard drains in mitigating charge collection and charge spread B Narasimham, JW Gambles, RL Shuler, BL Bhuva, LW Massengill IEEE Transactions on Nuclear Science 55 (6), 3456-3460, 2008 | 73 | 2008 |
| Independent measurement of SET pulse widths from N-hits and P-hits in 65-nm CMOS S Jagannathan, MJ Gadlage, BL Bhuva, RD Schrimpf, B Narasimham, ... IEEE Transactions on Nuclear Science 57 (6), 3386-3391, 2010 | 72 | 2010 |
| Effect of multiple-transistor charge collection on single-event transient pulse widths JR Ahlbin, MJ Gadlage, NM Atkinson, B Narasimham, BL Bhuva, ... IEEE Transactions on Device and Materials Reliability 11 (3), 401-406, 2011 | 66 | 2011 |
| The Effectiveness of TAG or Guard-Gates in SET Suppression Using Delay and Dual-Rail Configurations at 0.35 m RL Shuler, A Balasubramanian, B Narasimham, BL Bhuva, PM O'Neill, ... IEEE transactions on nuclear science 53 (6), 3428-3431, 2006 | 65 | 2006 |
| Scaling trends and bias dependence of the soft error rate of 16 nm and 7 nm FinFET SRAMs B Narasimham, S Gupta, D Reed, JK Wang, N Hendrickson, H Taufique 2018 IEEE international reliability physics symposium (IRPS), 4C. 1-1-4C. 1-4, 2018 | 61 | 2018 |
| Single-event transient measurements in nMOS and pMOS transistors in a 65-nm bulk CMOS technology at elevated temperatures MJ Gadlage, JR Ahlbin, B Narasimham, BL Bhuva, LW Massengill, ... IEEE Transactions on Device and Materials Reliability 11 (1), 179-186, 2010 | 52 | 2010 |
| Single-event charge collection and upset in 40-nm dual-and triple-well bulk CMOS SRAMs I Chatterjee, B Narasimham, NN Mahatme, BL Bhuva, RD Schrimpf, ... IEEE Transactions on Nuclear Science 58 (6), 2761-2767, 2011 | 51 | 2011 |
| Temperature dependence of digital single-event transients in bulk and fully-depleted SOI technologies MJ Gadlage, JR Ahlbin, V Ramachandran, P Gouker, CA Dinkins, ... IEEE Transactions on Nuclear Science 56 (6), 3115-3121, 2009 | 51 | 2009 |
| Bias dependence of single-event upsets in 16 nm FinFET D-flip-flops B Narasimham, S Hatami, A Anvar, DM Harris, A Lin, JK Wang, ... IEEE Transactions on Nuclear Science 62 (6), 2578-2584, 2015 | 49 | 2015 |
| Generation and Propagation of Single Event Transients in 0.18- Fully Depleted SOI P Gouker, J Brandt, P Wyatt, B Tyrrell, A Soares, J Knecht, C Keast, ... IEEE Transactions on Nuclear Science 55 (6), 2854-2860, 2008 | 43 | 2008 |
| Effect of voltage fluctuations on the single event transient response of deep submicron digital circuits MJ Gadlage, RD Schrimpf, B Narasimham, BL Bhuva, PH Eaton, ... IEEE Transactions on Nuclear Science 54 (6), 2495-2499, 2007 | 41 | 2007 |
| Angular effects of heavy-ion strikes on single-event upset response of flip-flop designs in 16-nm bulk FinFET technology H Zhang, H Jiang, TR Assis, DR Ball, B Narasimham, A Anvar, ... IEEE Transactions on Nuclear Science 64 (1), 491-496, 2016 | 36 | 2016 |
