| Photonic ADC: overcoming the bottleneck of electronic jitter A Khilo, SJ Spector, ME Grein, AH Nejadmalayeri, CW Holzwarth, ... Optics express 20 (4), 4454-4469, 2012 | 553 | 2012 |
| Electron field emission from diamond and other carbon materials after H2, O2, and Cs treatment MW Geis, JC Twichell, J Macaulay, K Okano Applied physics letters 67 (9), 1328-1330, 1995 | 436 | 1995 |
| Diamond cold cathode MW Geis, NN Efremow, JD Woodhouse, MD McAleese, M Marchywka, ... IEEE Electron Device Letters 12 (8), 456-459, 1991 | 351 | 1991 |
| Crystallographic orientation of silicon on an amorphous substrate using an artificial surface‐relief grating and laser crystallization MW Geis, DC Flanders, HI Smith Applied Physics Letters 35 (1), 71-74, 1979 | 346 | 1979 |
| Diamond emitters fabrication and theory MW Geis, JC Twichell, TM Lyszczarz Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 340 | 1996 |
| A new surface electron-emission mechanism in diamond cathodes MW Geis, NN Efremow, KE Krohn, JC Twichell, TM Lyszczarz, R Kalish, ... Nature 393 (6684), 431-435, 1998 | 278 | 1998 |
| Exceptionally high voltage Schottky diamond diodes and low boron doping JE Butler, MW Geis, KE Krohn, J Lawless Jr, S Deneault, TM Lyszczarz, ... Semiconductor Science and Technology 18 (3), S67, 2003 | 227 | 2003 |
| CMOS-compatible all-Si high-speed waveguide photodiodes with high responsivity in near-infrared communication band MW Geis, SJ Spector, ME Grein, RT Schulein, JU Yoon, DM Lennon, ... IEEE Photonics Technology Letters 19 (3), 152-154, 2007 | 213 | 2007 |
| Fundamental issues in heteroepitaxy—A department of energy, council on materials science panel report EG Bauer, BW Dodson, DJ Ehrlich, LC Feldman, CP Flynn, MW Geis, ... Journal of Materials Research 5 (4), 852-894, 1990 | 210 | 1990 |
| High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond MW Geis, DD Rathman, DJ Ehrlich, RA Murphy, WT Lindley IEEE electron device letters 8 (8), 341-343, 1987 | 209 | 1987 |
| Comparison of electric field emission from nitrogen‐doped, type Ib diamond, and boron‐doped diamond MW Geis, JC Twichell, NN Efremow, K Krohn, TM Lyszczarz Applied Physics Letters 68 (16), 2294-2296, 1996 | 208 | 1996 |
| Zone‐Melting Recrystallization of Si Films with a Moveable‐Strip‐Heater Oven MW Geis, HI Smith, BY Tsaur, JCC Fan, DJ Silversmith, RW Mountain Journal of the Electrochemical Society 129 (12), 2812, 1982 | 206 | 1982 |
| Silicon photonics for compact, energy-efficient interconnects T Barwicz, H Byun, F Gan, CW Holzwarth, MA Popovic, PT Rakich, ... Journal of Optical Networking 6 (1), 63-73, 2007 | 199 | 2007 |
| Submicrosecond submilliwatt silicon-on-insulator thermooptic switch MW Geis, SJ Spector, RC Williamson, TM Lyszczarz IEEE photonics technology letters 16 (11), 2514-2516, 2004 | 197 | 2004 |
| Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW-1 response MW Geis, SJ Spector, ME Grein, JU Yoon, DM Lennon, TM Lyszczarz Optics Express 17 (7), 5193-5204, 2009 | 186 | 2009 |
| Capacitance-voltage measurements on metal-SiO2-diamond structures fabricated with (100)-and (111)-oriented substrates MW Geis, JA Gregory, BB Pate IEEE transactions on electron devices 38, 619-626, 1991 | 184 | 1991 |
| Lateral epitaxy by seeded solidification for growth of single‐crystal Si films on insulators JCC Fan, MW Geis, BY Tsaur Applied Physics Letters 38 (5), 365-367, 1981 | 181 | 1981 |
| Self‐developing UV photoresist using excimer laser exposure TF Deutsch, MW Geis Journal of applied physics 54 (12), 7201-7204, 1983 | 174 | 1983 |
| A novel anisotropic dry etching technique MW Geis, GA Lincoln, N Efremow, WJ Piacentini Journal of Vacuum Science and Technology 19 (4), 1390-1393, 1981 | 162 | 1981 |
| Resonant-tunneling transmission line technology MW Geis, ER Brown, SJ Eglash, CL Dennis US Patent 5,825,240, 1998 | 159 | 1998 |
