| Effect of growth temperature on polytype transition of GaN from zincblende to wurtzite S Suandon, S Sanorpim, K Yoodee, K Onabe Thin Solid Films 515 (10), 4393-4396, 2007 | 39 | 2007 |
| MOVPE growth and optical characterization of GaAsN films with higher nitrogen concentrations F Nakajima, S Sanorpim, W Ono, R Katayama, K Onabe physica status solidi (a) 203 (7), 1641-1644, 2006 | 15 | 2006 |
| Effects of growth temperature in selective-area growth of cubic GaN on GaAs (1 0 0) by MOVPE S Sanorpim, J Wu, K Onabe, Y Shiraki Journal of crystal growth 237, 1124-1128, 2002 | 15 | 2002 |
| Structural transition control of laterally overgrown c‐GaN and h‐GaN on stripe‐patterned GaAs (001) substrates by MOVPE S Sanorpim, E Takuma, H Ichinose, R Katayama, K Onabe physica status solidi (b) 244 (6), 1769-1774, 2007 | 13 | 2007 |
| MOVPE growth and optical investigations of InGaPN alloys S Sanorpim, F Nakajima, N Nakadan, T Kimura, R Katayama, K Onabe Journal of Crystal Growth 275 (1-2), e1017-e1021, 2005 | 13 | 2005 |
| The effects of relaxed InGaAs virtual substrates on the formation of self-assembled InAs quantum dots CC Thet, S Sanorpim, S Panyakeow, S Kanjanachuchai Semiconductor science and technology 23 (5), 055007, 2008 | 12 | 2008 |
| Correlation between Raman intensity of the N-related local vibrational mode and N content in GaAsN strained layers grown by MOVPE P Panpech, S Vijarnwannaluk, S Sanorpim, W Ono, F Nakajima, ... Journal of crystal growth 298, 107-110, 2007 | 12 | 2007 |
| Reduction of Planar Defect Density in Laterally Overgrown Cubic‐GaN on Patterned GaAs (001) Substrates by MOVPE S Sanorpim, E Takuma, R Katayama, K Onabe, H Ichinose, Y Shiraki physica status solidi (b) 234 (3), 840-844, 2002 | 12 | 2002 |
| Influences of two-step growth and off-angle Ge substrate on crystalline quality of GaAs buffer layers grown by MOVPE P Wanarattikan, S Sanorpim, S Denchitcharoen, K Uesugi, S Kuboya, ... Journal of Crystal Growth 414, 15-20, 2015 | 10 | 2015 |
| Characterization of semi-polar GaN on GaAs substrates P Saengkaew, S Sanorpim, V Yordsri, C Thanachayanont, K Onabe Journal of Crystal Growth 411, 76-80, 2015 | 10 | 2015 |
| High‐nitrogen‐content InGaAsN films on GaAs grown by metalorganic vapor phase epitaxy with TBAs and DMHy S Sanorpim, F Nakajima, W Ono, R Katayama, K Onabe physica status solidi (a) 203 (7), 1612-1617, 2006 | 10 | 2006 |
| A preliminary X-ray study on human-hair microstructures for a health-state indicator P Saengkaew, W Ussawawongaraya, S Khaweerat, S Rugmai, S Ouajai, ... International Journal of Biomedical and Biological Engineering 5 (11), 630-634, 2011 | 9 | 2011 |
| Cubic GaN growth on (311) A GaAs substrate by MOVPE S Sanorpim, N Discharoen, K Onabe physica status solidi c 7 (7‐8), 2076-2078, 2010 | 9 | 2010 |
| Post-growth thermal annealing of high N-content GaAsN by MOVPE and its effect on strain relaxation P Klangtakai, S Sanorpim, K Yoodee, W Ono, F Nakajima, R Katayama, ... Journal of crystal growth 298, 140-144, 2007 | 9 | 2007 |
| Impact of precursor purity on optical properties and radiation detection of CsI: Tl scintillators P Saengkaew, S Sanorpim, M Jitpukdee, K Cheewajaroen, C Yenchai, ... Applied Physics A 122, 1-7, 2016 | 8 | 2016 |
| TEM investigation of anisotropic defect structure in cubic GaN/AlGaAs/GaAs (001) grown by MOVPE J Parinyataramas, S Sanorpim, C Thanachayanont, K Onabe physica status solidi c 8 (7‐8), 2255-2257, 2011 | 8 | 2011 |
| Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy P Kongjaeng, S Sanorpim, T Yamamoto, W Ono, F Nakajima, R Katayama, ... Journal of crystal growth 298, 111-115, 2007 | 8 | 2007 |
| Effect of gamma-ray irradiation on structural properties of GaAsN films grown by metal organic vapor phase epitaxy P Klangtakai, S Sanorpim, A Wattanawareekul, P Suwanyangyaun, ... Journal of Crystal Growth 418, 145-152, 2015 | 7 | 2015 |
| Photoluminescence properties of InGaAsN films on Ge (001) vicinal substrates K Uesugi, S Kuboya, S Sanorpim, K Onabe Journal of crystal growth 370, 46-50, 2013 | 7 | 2013 |
| Photoluminescence and photoluminescence-excitation spectroscopy of InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE D Kaewket, S Tungasmita, S Sanorpim, F Nakajima, N Nakadan, ... Journal of crystal growth 298, 531-535, 2007 | 7 | 2007 |
chanchana thanachayanontNational Metal and Materials Technology Center在 mtec.or.th 的电子邮件经过验证
