| Identification of GaN buffer traps in microwave power AlGaN/GaN HEMTs through low frequency S-parameters measurements and TCAD-based physical device simulations NK Subramani, J Couvidat, A Al Hajjar, JC Nallatamby, R Sommet, ... IEEE Journal of the Electron Devices Society 5 (3), 175-181, 2017 | 99 | 2017 |
| Low-frequency drain noise characterization and TCAD physical simulations of GaN HEMTs: Identification and analysis of physical location of traps NK Subramani, J Couvidat, A Al Hajjar, JC Nallatamby, R Quéré IEEE Electron Device Letters 39 (1), 107-110, 2017 | 34 | 2017 |
| Thermal analysis of AlN/GaN/AlGaN HEMTs grown on Si and SiC substrate through TCAD simulations and measurements AK Sahoo, NK Subramani, JC Nallatamby, R Sommet, R Quéré, ... 2016 11th European Microwave Integrated Circuits Conference (EuMIC), 145-148, 2016 | 27 | 2016 |
| Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism AK Sahoo, NK Subramani, JC Nallatamby, L Sylvain, C Loyez, R Quéré, ... Solid-State Electronics 115, 12-16, 2016 | 27 | 2016 |
| Characterization of parasitic resistances of AlN/GaN/AlGaN HEMTs through TCAD-based device simulations and on-wafer measurements NK Subramani, AK Sahoo, JC Nallatamby, R Sommet, N Rolland, ... IEEE Transactions on Microwave Theory and Techniques 64 (5), 1351-1358, 2016 | 26 | 2016 |
| Low-frequency noise characterization in GaN HEMTs: Investigation of deep levels and their physical properties NK Subramani, J Couvidat, A Al Hajjar, JC Nallatamby, D Floriot, ... IEEE Electron Device Letters 38 (8), 1109-1112, 2017 | 22 | 2017 |
| Physics-based TCAD device simulations and measurements of GaN HEMT technology for RF power amplifier applications NK Subramani Université de Limoges, 2017 | 21 | 2017 |
| Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties PV Raja, NK Subramani, F Gaillard, M Bouslama, R Sommet, ... Electronics 10 (24), 3096, 2021 | 20 | 2021 |
| Investigation of fast and slow charge trapping mechanisms of GaN/A1GaN HEMTs through pulsed IV measurements and the associated new trap model J Couvidat, NK Subramani, V Gillet, S Laurent, C Charbonniaud, ... 2018 IEEE/MTT-S International Microwave Symposium-IMS, 720-723, 2018 | 16 | 2018 |
| Temperature dependent contact and channel sheet resistance extraction of GaN HEMT AK Sahoo, NK Subramani, JC Nallatamby, N Rolland, R Quéré, ... 2015 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop …, 2015 | 13 | 2015 |
| Time domain drain lag measurement and TCAD-based device simulations of AlGaN/GaN HEMT: Investigation of physical mechanism NK Subramani, M Bouslama, R Sommet, JC Nallatamby 2019 14th European microwave integrated circuits conference (EuMIC), 21-24, 2019 | 8 | 2019 |
| Low frequency drain noise characterization of different technologies of gan hemts: investigation of trapping mechanism M Bouslama, A Al Hajjar, S Laurent, NK Subramani, JC Nallatamby, ... 2018 International Workshop on Integrated Nonlinear Microwave and Millimetre …, 2018 | 8 | 2018 |
| A physics based analytical model and numerical simulation for current-voltage characteristics of microwave power AlGaN/GaN HEMT NK Subramani, JC Nallatamby, AK Sahoo, R Sommet, R Quéré, B Bindu 2016 IEEE MTT-S International Microwave and RF Conference (IMaRC), 1-4, 2016 | 5 | 2016 |
| RF performance improvement on 22FDX® platform and beyond T Herrmann, A Zaka, NK Subramani, Z Zhao, S Lehmann, Y Andee 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | 4 | 2019 |
| Designing high power RF amplifiers: An analytic approach MM De Souza, M Rasheduzzaman, SN Kumar 2014 International Caribbean Conference on Devices, Circuits and Systems …, 2014 | 4 | 2014 |
| Systematic study of traps in AlN/GaN/AlGaN HEMTs on SiC substrate by numerical TCAD simulation NK Subramani, AK Sahoo, JC Nallatamby, R Sommet, R Quéré 2016 12th Conference on Ph. D. Research in Microelectronics and Electronics …, 2016 | 3 | 2016 |
| Identification de pièges dans le buffer des HEMTs AlGaN/GaN basée sur des mesures de paramètres S basse fréquence et sur des simulations physiques J Couvidat, NK Subramani, A Al Hajjar, JC Nallatamby, R Sommet, ... 20èmes Journées Nationales Microondes, 2017 | 1 | 2017 |
| Reliability studies of AlGaN/GaN high electron mobility transistors (HEMT) SN Kumar, B Bindu 2012 International Conference on Devices, Circuits and Systems (ICDCS), 558-562, 2012 | 1 | 2012 |
| Silicon-controlled rectifiers for electrostatic discharge protection V Ganesan, P Mahajan, NK Subramani, S Mitra US Patent App. 17/857,439, 2024 | | 2024 |
| High-Voltage Electrostatic Discharge Protection Device development in 28nm BCDLite Technology P Mahajan, V Ganesan, NK Subramani, R Jain, S Mitra, R Gauthier 2022 IEEE International Symposium on the Physical and Failure Analysis of …, 2022 | | 2022 |
