| A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs N Modolo, SW Tang, HJ Jiang, C De Santi, M Meneghini, TL Wu IEEE Transactions on Electron Devices 68 (4), 1489-1494, 2020 | 49 | 2020 |
| Investigation of recessed gate AlGaN/GaN MIS-HEMTs with double AlGaN barrier designs toward an enhancement-mode characteristic TL Wu, SW Tang, HJ Jiang Micromachines 11 (2), 163, 2020 | 19 | 2020 |
| Using gate leakage conduction to understand positive gate bias induced threshold voltage shift in p-GaN gate HEMTs SW Tang, B Bakeroot, ZH Huang, SC Chen, WS Lin, TC Lo, M Borga, ... IEEE Transactions on Electron Devices 70 (2), 449-453, 2022 | 18 | 2022 |
| High threshold voltage enhancement-mode regrown p-GaN gate HEMTs with a robust forward time-dependent gate breakdown stability SW Tang, ZH Huang, SC Chen, WS Lin, B De Jaeger, D Wellekens, ... IEEE Electron Device Letters 43 (10), 1625-1628, 2022 | 18 | 2022 |
| Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation C Sharma, N Modolo, HH Chen, YY Tseng, SW Tang, M Meneghini, ... Microelectronics Reliability 100, 113349, 2019 | 11 | 2019 |
| Stability of wireless power transfer using gamma-ray irradiated GaN power HEMTs SW Tang, PY Yao, DS Chao, TL Wu, HM Hsu Microelectronics Reliability 126, 114425, 2021 | 8 | 2021 |
| Capacitance-Dependent VTH Instability Under a High dVg/dt Event in p-GaN Power HEMTs SW Tang, WS Lin, ZH Huang, TL Wu IEEE Electron Device Letters 43 (10), 1617-1620, 2022 | 7 | 2022 |
| Dynamic on-resistance stability of SiC and GaN power devices during high-frequency (100–300 kHz) hard switching and zero voltage switching operations ZH Huang, SW Tang, CT Fan, MC Lin, TL Wu Microelectronics Reliability 145, 114983, 2023 | 6 | 2023 |
| Analysis of the subthreshold characteristics in AlGaN/GaN HEMTs with a p-GaN gate SW Tang, SC Chen, TL Wu Microelectronics Reliability 126, 114302, 2021 | 5 | 2021 |
| Investigation on stability of p-GaN HEMTs with an indium–tin–oxide gate under forward gate bias CY Chang, YL Shen, CY Wang, SW Tang, TL Wu, WH Kuo, SF Lin, ... IEEE Journal of the Electron Devices Society 9, 687-690, 2021 | 5 | 2021 |
| Silicon Nitride-induced Threshold Voltage Shift in p-GaN HEMTs with Au-free Gate-first Process YC Chen, SW Tang, PH Lin, ZC Chen, MH Lu, KH Kao, TL Wu 2020 IEEE International Symposium on the Physical and Failure Analysis of …, 2020 | 5 | 2020 |
| Robust forward gate bias TDDB stability in enhancement-mode fully recessed gate GaN MIS-FETs with ALD Al2O3Gate dielectric SW Tang, SB Kutub, TL Wu 2020 IEEE International Symposium on the Physical and Failure Analysis of …, 2020 | 4 | 2020 |
| Novel topology with continuous switching to comprehensively characterize trapping-induced dynamics in GaN power devices MC Lin, CT Fan, SW Tang, TL Wu, CF Huang 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 3 | 2022 |
| Investigation of the passivation-induced VTH shift in p-GaN HEMTs with Au-free gate-first process SW Tang, ZH Huang, YC Chen, CH Wu, PH Lin, ZC Chen, MH Lu, ... Microelectronics Reliability 122, 114150, 2021 | 3 | 2021 |
| Ultra-Fast Positive Gate Bias Stress (< 100ns) to Understand the Hole Injection in Power p-GaN HEMTs ZH Huang, WS Lin, TC Lo, SW Tang, SC Chen, D Wellekens, M Borga, ... 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 2 | 2023 |
| Comprehensive investigation of the switching stability in SiC and GaN power devices SW Tang, CT Fan, MC Lin, TL Wu 2022 IEEE International Symposium on the Physical and Failure Analysis of …, 2022 | 2 | 2022 |
| 1.2 kV 4H-SiC VDMOSFETs with Si-implanted surface: performance enhancement and reliability evaluation JW Hu, JY Jiang, PW Huang, CF Huang, SW Tang, ZH Huang, TL Wu, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 2 | 2021 |
| Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology JO Gallardo, B De Jaeger, S Dash, SW Tang, TN Tran, D Wellekens, ... 2021 IEEE International Symposium on the Physical and Failure Analysis of …, 2021 | 1 | 2021 |
| Process improvement of p-GaN HEMTs with a u-GaN etching buffer layer inserted CY Chang, YL Shen, SW Tang, TL Wu, WH Kuo, SF Lin, YR Wu, ... Applied Physics Express 15 (11), 116503, 2022 | | 2022 |
| Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability JO Gallardo, S Dash, TN Tran, ZH Huang, SW Tang, D Wellekens, ... Microelectronics Reliability 134, 114568, 2022 | | 2022 |
