| Thin film transistors: materials and processes Y Kuo Kluwer academic publishers 1, 241-271, 2004 | 340* | 2004 |
| Facing the headaches of early failures: A state-of-the-art review of burn-in decisions W Kuo, Y Kuo Proceedings of the IEEE 71 (11), 1257-1266, 1983 | 182 | 1983 |
| Thin film transistor technology—Past, present, and future Y Kuo The Electrochemical Society Interface 22 (1), 55, 2013 | 172 | 2013 |
| Reactive ion etching of sputter deposited tantalum oxide and its etch selectivity to tantalum Y Kuo Journal of the Electrochemical Society 139 (2), 579, 1992 | 89 | 1992 |
| PECVD silicon nitride as a gate dielectric for amorphous silicon thin film transistor: process and device performance Y Kuo Journal of The Electrochemical Society 142 (1), 186, 1995 | 80 | 1995 |
| Room-temperature copper etching based on a plasma–copper reaction Y Kuo, S Lee Applied Physics Letters 78 (7), 1002-1004, 2001 | 79 | 2001 |
| Sub 2 nm thick zirconium doped hafnium oxide high-K gate dielectrics Y Kuo, J Lu, J Yan, T Yuan, HC Kim, J Peterson, M Gardner, S Chatterjee, ... ECS Transactions 1 (5), 447, 2006 | 78 | 2006 |
| Electrical and physical characterization of zirconium-doped tantalum oxide thin films JY Tewg, Y Kuo, J Lu, BW Schueler Journal of the Electrochemical Society 151 (3), F59, 2004 | 77 | 2004 |
| Chlorine plasma/copper reaction in a new copper dry etching process S Lee, Y Kuo Journal of The Electrochemical Society 148 (9), G524, 2001 | 75 | 2001 |
| Zirconium-doped hafnium oxide high-k dielectrics with subnanometer equivalent oxide thickness by reactive sputtering J Yan, Y Kuo, J Lu Electrochemical and solid-state letters 10 (7), H199, 2007 | 71 | 2007 |
| Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress S Chatterjee, Y Kuo, J Lu, JY Tewg, P Majhi Microelectronics Reliability 46 (1), 69-76, 2006 | 70 | 2006 |
| Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistors—A critical review Y Kuo Vacuum 51 (4), 741-745, 1998 | 67 | 1998 |
| Polycrystalline silicon formation by pulsed rapid thermal annealing of amorphous silicon Y Kuo, PM Kozlowski Applied physics letters 69 (8), 1092-1094, 1996 | 67 | 1996 |
| Hafnium-doped tantalum oxide high-k dielectrics with sub-2 nm equivalent oxide thickness J Lu, Y Kuo Applied Physics Letters 87 (23), 2005 | 66 | 2005 |
| A novel plasma-based copper dry etching method Y Kuo, S Lee Japanese Journal of Applied Physics 39 (3A), L188, 2000 | 66 | 2000 |
| A light emitting device made from thin zirconium-doped hafnium oxide high-k dielectric film with or without an embedded nanocrystal layer Y Kuo, CC Lin Applied Physics Letters 102 (3), 2013 | 65 | 2013 |
| Suppression of crystallization of tantalum oxide thin film by doping with zirconium JY Tewg, Y Kuo, J Lu Electrochemical and solid-state letters 8 (1), G27, 2004 | 62 | 2004 |
| Reactive ion etching of PECVD amorphous silicon and silicon nitride thin films with fluorocarbon gases Y Kuo Journal of the Electrochemical Society 137 (4), 1235, 1990 | 62 | 1990 |
| Thin-film transistor and ultra-large scale integrated circuit: Competition or collaboration Y Kuo Japanese journal of applied physics 47 (3S), 1845, 2008 | 61 | 2008 |
| Hafnium-doped tantalum oxide high-k gate dielectrics J Lu, Y Kuo, JY Tewg Journal of the Electrochemical Society 153 (5), G410, 2006 | 59 | 2006 |
