A conducting polymer with enhanced electronic stability applied in cardiac models D Mawad, C Mansfield, A Lauto, F Perbellini, GW Nelson, J Tonkin, ... Science advances 2 (11), e1601007, 2016 | 215 | 2016 |
Epitaxial Pb on InAs nanowires for quantum devices T Kanne, M Marnauza, D Olsteins, DJ Carrad, JE Sestoft, J De Bruijckere, ... Nature Nanotechnology 16 (7), 776-781, 2021 | 85 | 2021 |
Shadow epitaxy for in situ growth of generic semiconductor/superconductor hybrids DJ Carrad, M Bjergfelt, T Kanne, M Aagesen, F Krizek, EM Fiordaliso, ... Advanced Materials 32 (23), 1908411, 2020 | 78 | 2020 |
InAs nanowire transistors with multiple, independent wrap-gate segments AM Burke, DJ Carrad, JG Gluschke, K Storm, S Fahlvik Svensson, H Linke, ... Nano letters 15 (5), 2836-2843, 2015 | 44 | 2015 |
Diluted oxide interfaces with tunable ground states Y Gan, DV Christensen, Y Zhang, H Zhang, D Krishnan, Z Zhong, W Niu, ... Advanced Materials 31 (10), 1805970, 2019 | 43 | 2019 |
Superconducting vanadium/indium-arsenide hybrid nanowires M Bjergfelt, DJ Carrad, T Kanne, M Aagesen, EM Fiordaliso, E Johnson, ... Nanotechnology 30 (29), 294005, 2019 | 38 | 2019 |
Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors DJ Carrad, AM Burke, RW Lyttleton, HJ Joyce, HH Tan, C Jagadish, ... Nano letters 14 (1), 94-100, 2014 | 37 | 2014 |
Hybrid nanowire ion-to-electron transducers for integrated bioelectronic circuitry DJ Carrad, AB Mostert, AR Ullah, AM Burke, HJ Joyce, HH Tan, ... Nano Letters 17 (2), 827-833, 2017 | 36 | 2017 |
Quantum‐confinement‐enhanced thermoelectric properties in modulation‐doped GaAs–AlGaAs core–shell nanowires S Fust, A Faustmann, DJ Carrad, J Bissinger, B Loitsch, M Döblinger, ... Advanced Materials 32 (4), 1905458, 2020 | 26 | 2020 |
Quantum transport and sub-band structure of modulation-doped GaAs/AlAs Core–superlattice nanowires DM Irber, J Seidl, DJ Carrad, J Becker, N Jeon, B Loitsch, J Winnerl, ... Nano letters 17 (8), 4886-4893, 2017 | 23 | 2017 |
Origin of gate hysteresis in -type Si-doped AlGaAs/GaAs heterostructures AM Burke, DEJ Waddington, DJ Carrad, RW Lyttleton, HH Tan, PJ Reece, ... Physical Review B—Condensed Matter and Materials Physics 86 (16), 165309, 2012 | 19 | 2012 |
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors JG Gluschke, J Seidl, AM Burke, RW Lyttleton, DJ Carrad, AR Ullah, ... Nanotechnology 30 (6), 064001, 2018 | 18 | 2018 |
Using Polymer Electrolyte Gates to Set‐and‐Freeze Threshold Voltage and Local Potential in Nanowire‐based Devices and Thermoelectrics SF Svensson, AM Burke, DJ Carrad, M Leijnse, H Linke, AP Micolich Advanced Functional Materials 25 (2), 255-262, 2015 | 17 | 2015 |
Using ultrathin parylene films as an organic gate insulator in nanowire field-effect transistors JG Gluschke, J Seidl, RW Lyttleton, DJ Carrad, JW Cochrane, S Lehmann, ... Nano letters 18 (7), 4431-4439, 2018 | 16 | 2018 |
The effect of (NH4) 2Sx passivation on the (311) A GaAs surface and its use in AlGaAs/GaAs heterostructure devices DJ Carrad, AM Burke, PJ Reece, RW Lyttleton, DEJ Waddington, A Rai, ... Journal of Physics: Condensed Matter 25 (32), 325304, 2013 | 15 | 2013 |
Epitaxially driven phase selectivity of Sn in hybrid quantum nanowires SA Khan, S Martí-Sánchez, D Olsteins, C Lampadaris, DJ Carrad, Y Liu, ... ACS nano 17 (12), 11794-11804, 2023 | 11 | 2023 |
Andreev Interference in the Surface Accumulation Layer of Half‐Shell InAsSb/Al Hybrid Nanowires L Stampfer, DJ Carrad, D Olsteins, CEN Petersen, SA Khan, P Krogstrup, ... Advanced Materials 34 (11), 2108878, 2022 | 11 | 2022 |
Doubling the mobility of InAs/InGaAs selective area grown nanowires DV Beznasyuk, S Martí-Sánchez, JH Kang, R Tanta, M Rajpalke, ... Physical Review Materials 6 (3), 034602, 2022 | 10 | 2022 |
Superconductivity and parity preservation in as-grown in islands on InAs nanowires MS Bjergfelt, DJ Carrad, T Kanne, E Johnson, EM Fiordaliso, ... Nano letters 21 (23), 9875-9881, 2021 | 10 | 2021 |
Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes AR Ullah, DJ Carrad, P Krogstrup, J Nygård, AP Micolich Physical Review Materials 2 (2), 025601, 2018 | 10 | 2018 |