Comparative performance analysis of the dielectrically modulated full-gate and short-gate tunnel FET-based biosensors S Kanungo, S Chattopadhyay, PS Gupta, H Rahaman IEEE Transactions on Electron Devices 62 (3), 994-1001, 2015 | 186 | 2015 |
Study and analysis of the effects of SiGe source and pocket-doped channel on sensing performance of dielectrically modulated tunnel FET-based biosensors S Kanungo, S Chattopadhyay, PS Gupta, K Sinha, H Rahaman IEEE Transactions on Electron Devices 63 (6), 2589-2596, 2016 | 166 | 2016 |
Strained-Si heterostructure field effect transistors CK Maiti, LK Bera, S Chattopadhyay Semiconductor science and technology 13 (11), 1225, 1999 | 151 | 1999 |
A model for capacitance reconstruction from measured lossy MOS capacitance–voltage characteristics KSK Kwa, S Chattopadhyay, ND Jankovic, SH Olsen, LS Driscoll, ... Semiconductor science and technology 18 (2), 82, 2002 | 125 | 2002 |
Strained-Si heterostructure field effect devices CK Maiti, S Chattopadhyay, LK Bera Taylor & Francis, 2007 | 102 | 2007 |
Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs GK Dalapati, S Chattopadhyay, KSK Kwa, SH Olsen, YL Tsang, R Agaiby, ... IEEE Transactions on Electron Devices 53 (5), 1142-1152, 2006 | 95 | 2006 |
High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture SH Olsen, AG O'Neill, LS Driscoll, KSK Kwa, S Chattopadhyay, AM Waite, ... IEEE Transactions on Electron Devices 50 (9), 1961-1969, 2003 | 92 | 2003 |
Chemical bath deposited (CBD) CuO thin films on n-silicon substrate for electronic and optical applications: Impact of growth time J Sultana, S Paul, A Karmakar, R Yi, GK Dalapati, S Chattopadhyay Applied surface science 418, 380-387, 2017 | 85 | 2017 |
Physical and electrochemical characterization of reduced graphene oxide/silver nanocomposites synthesized by adopting a green approach I Roy, D Rana, G Sarkar, A Bhattacharyya, NR Saha, S Mondal, ... RSC Advances 5 (32), 25357-25364, 2015 | 82 | 2015 |
Synthesis and characterization of graphene from waste dry cell battery for electronic applications I Roy, G Sarkar, S Mondal, D Rana, A Bhattacharyya, NR Saha, ... RSC advances 6 (13), 10557-10564, 2016 | 81 | 2016 |
Thermal reaction of nickel and alloy KL Pey, WK Choi, S Chattopadhyay, HB Zhao, EA Fitzgerald, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20 (6 …, 2002 | 79 | 2002 |
Interfacial reactions of Ni on Si 1-x Ge x (x= 0.2, 0.3) at low temperature by rapid thermal annealing HB Zhao, KL Pey, WK Choi, S Chattopadhyay, EA Fitzgerald, ... Journal of applied physics 92 (1), 214-217, 2002 | 79 | 2002 |
Green synthesis of cadmium oxide decorated reduced graphene oxide nanocomposites and its electrical and antibacterial properties S Sadhukhan, TK Ghosh, I Roy, D Rana, A Bhattacharyya, R Saha, ... Materials Science and Engineering: C 99, 696-709, 2019 | 76 | 2019 |
Leakage current and charge trapping behavior in TiO2∕ SiO2 high-κ gate dielectric stack on 4H‐SiC substrate R Mahapatra, AK Chakraborty, N Poolamai, A Horsfall, S Chattopadhyay, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 73 | 2007 |
FT-MIR supported Electrical Impedance Spectroscopy based study of sugar adulterated honeys from different floral origin C Das, S Chakraborty, K Acharya, NK Bera, D Chattopadhyay, ... Talanta 171, 327-334, 2017 | 66 | 2017 |
Study of single-and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs SH Olsen, AG O'Neill, S Chattopadhyay, LS Driscoll, KSK Kwa, DJ Norris, ... IEEE Transactions on Electron Devices 51 (8), 1245-1253, 2004 | 51 | 2004 |
Clustered vacancies in ZnO: chemical aspects and consequences on physical properties S Pal, N Gogurla, A Das, SS Singha, P Kumar, D Kanjilal, A Singha, ... Journal of Physics D: Applied Physics 51 (10), 105107, 2018 | 50 | 2018 |
Green synthesis of silver nanoparticles-based nanofluids and investigation of their antimicrobial activities MMR Mollick, B Bhowmick, D Maity, D Mondal, I Roy, J Sarkar, D Rana, ... Microfluidics and nanofluidics 16, 541-551, 2014 | 50 | 2014 |
A semianalytical description of the hole band structure in inversion layers for the physically based modeling of pMOS transistors M De Michielis, D Esseni, YL Tsang, P Palestri, L Selmi, AG O'Neill, ... IEEE transactions on electron devices 54 (9), 2164-2173, 2007 | 48 | 2007 |
2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects S Kanungo, G Ahmad, P Sahatiya, A Mukhopadhyay, S Chattopadhyay npj 2D Materials and Applications 6 (1), 83, 2022 | 40 | 2022 |