| Magnetic racetrack memory: From physics to the cusp of applications within a decade R Bläsing, AA Khan, PC Filippou, C Garg, F Hameed, J Castrillon, ... Proceedings of the IEEE 108 (8), 1303-1321, 2020 | 129 | 2020 |
| Chiral domain wall motion in unit-cell thick perpendicularly magnetized Heusler films prepared by chemical templating PC Filippou, J Jeong, Y Ferrante, SH Yang, T Topuria, MG Samant, ... Nature communications 9 (1), 4653, 2018 | 48 | 2018 |
| Current driven chiral domain wall motions in synthetic antiferromagnets with Co/Rh/Co A Cohen, A Jonville, Z Liu, C Garg, PC Filippou, SH Yang Journal of Applied Physics 128 (5), 2020 | 16 | 2020 |
| Heusler-based synthetic antiferrimagnets PC Filippou, SV Faleev, C Garg, J Jeong, Y Ferrante, T Topuria, ... Science Advances 8 (8), eabg2469, 2022 | 8 | 2022 |
| Magnetic junctions having enhanced tunnel magnetoresistance and utilizing heusler compounds J Jeong, MG Samant, Y Ferrante, PC Filippou, C Garg, SSP Parkin US Patent 11,665,979, 2023 | 7 | 2023 |
| Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF) PC Filippou, C Garg, Y Ferrante, SSP Parkin, J Jeong, MG Samant US Patent 10,957,848, 2021 | 5 | 2021 |
| Efficient chiral-domain-wall motion driven by spin-orbit torque in metastable platinum films C Garg, SH Yang, L Thompson, T Topuria, A Capua, B Hughes, T Phung, ... Physical Review Applied 14 (3), 034052, 2020 | 5 | 2020 |
| Templating layers for perpendicularly magnetized Heusler films/compounds J Jeong, PC Filippou, Y Ferrante, C Garg, SSP Parkin, M Samant US Patent 11,751,486, 2023 | 4 | 2023 |
| Tunable templating layers for perpendicularly magnetized Heusler films J Jeong, PC Filippou, Y Ferrante, C Garg, SSP Parkin, M Samant US Patent 11,804,321, 2023 | 3 | 2023 |
| IrAl as a non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF) with Heusler compounds J Jeong, PC Filippou, Y Ferrante, C Garg, SSP Parkin, M Samant US Patent 11,538,987, 2022 | 3 | 2022 |
| Half‐Metallic Full‐Heusler and Half‐Heusler Compounds with Perpendicular Magnetic Anisotropy SV Faleev, PC Filippou, C Garg, J Jeong, MG Samant, SSP Parkin physica status solidi (b) 260 (3), 2200531, 2023 | 2 | 2023 |
| Insertion layers for perpendicularly magnetized Heusler layers with reduced magnetic damping J Jeong, PC Filippou, Y Ferrante, C Garg, M Samant, D Apalkov US Patent 11,925,124, 2024 | 1 | 2024 |
| Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized heusler films PC Filippou, C Garg, M Samant, J Jeong US Patent App. 18/179,588, 2024 | | 2024 |
| Ferrimagnetic Heusler tunnel junctions with fast spin-transfer torque switching enabled by low magnetization C Garg, PC Filippou, Y Ferrante, SH Yang, B Hughes, CT Rettner, ... arXiv preprint arXiv:2403.08112, 2024 | | 2024 |
| Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized heusler films PC Filippou, C Garg, SH Yang, M Samant, J Jeong US Patent App. 17/807,485, 2023 | | 2023 |
| Tetragonal half metallic half-heusler compounds S Faleev, PC Filippou, Y Ferrante, C Garg, M Samant, J Jeong US Patent App. 17/710,399, 2023 | | 2023 |
| Tetragonal half metallic heusler compounds S Faleev, PC Filippou, Y Ferrante, C Garg, M Samant, J Jeong US Patent App. 17/710,438, 2023 | | 2023 |
| Ferrimagnetic Heusler compounds with high spin polarization J Jeong, S Faleev, PC Filippou, Y Ferrante, SSP Parkin, M Samant US Patent 11,756,578, 2023 | | 2023 |
| Magnetic tunnel junction including hexagonal multi-layered structure S Faleev, PC Filippou, Y Ferrante, C Garg, M Samant, J Jeong US Patent App. 17/688,196, 2023 | | 2023 |
| Tuning perpendicular magnetic anisotropy of heusler compound in mram devices M Samant, PC Filippou, Y Ferrante, C Garg, J Jeong US Patent App. 17/450,691, 2023 | | 2023 |
Chirag GargIBM Almaden Research Center在 ibm.com 的电子邮件经过验证
