| Performance comparison between pin tunneling transistors and conventional MOSFETs SO Koswatta, MS Lundstrom, DE Nikonov IEEE Transactions on Electron Devices 56 (3), 456-465, 2009 | 480 | 2009 |
| Carbon nanotube complementary wrap-gate transistors AD Franklin, SO Koswatta, DB Farmer, JT Smith, L Gignac, CM Breslin, ... Nano letters 13 (6), 2490-2495, 2013 | 219 | 2013 |
| Nonequilibrium green's function treatment of phonon scattering in carbon-nanotube transistors SO Koswatta, S Hasan, MS Lundstrom, MP Anantram, DE Nikonov IEEE Transactions on Electron Devices 54 (9), 2339-2351, 2007 | 208 | 2007 |
| On the possibility of obtaining MOSFET-like performance and sub-60-mV/dec swing in 1-D broken-gap tunnel transistors SO Koswatta, SJ Koester, W Haensch IEEE Transactions on electron devices 57 (12), 3222-3230, 2010 | 206 | 2010 |
| High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallization CH Lin, B Greene, S Narasimha, J Cai, A Bryant, C Radens, V Narayanan, ... 2014 IEEE International Electron Devices Meeting, 3.8. 1-3.8. 3, 2014 | 182 | 2014 |
| Computational study of carbon nanotube pin tunnel FETs SO Koswatta, DE Nikonov, MS Lundstrom IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 151 | 2005 |
| Ultimate RF performance potential of carbon electronics SO Koswatta, A Valdes-Garcia, MB Steiner, YM Lin, P Avouris IEEE Transactions on Microwave Theory and Techniques 59 (10), 2739-2750, 2011 | 145 | 2011 |
| Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors SO Koswatta, MS Lundstrom, MP Anantram, DE Nikonov Applied Physics Letters 87 (25), 2005 | 103 | 2005 |
| Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon-assisted tunneling SO Koswatta, MS Lundstrom, DE Nikonov Nano Letters 7 (5), 1160-1164, 2007 | 96 | 2007 |
| Influence of phonon scattering on the performance of pin band-to-band tunneling transistors SO Koswatta, MS Lundstrom, DE Nikonov Applied Physics Letters 92 (4), 2008 | 81 | 2008 |
| RaPiD: AI accelerator for ultra-low precision training and inference S Venkataramani, V Srinivasan, W Wang, S Sen, J Zhang, A Agrawal, ... 2021 ACM/IEEE 48th Annual International Symposium on Computer Architecture …, 2021 | 75 | 2021 |
| 9.1 A 7nm 4-core AI chip with 25.6 TFLOPS hybrid FP8 training, 102.4 TOPS INT4 inference and workload-aware throttling A Agrawal, SK Lee, J Silberman, M Ziegler, M Kang, S Venkataramani, ... 2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 144-146, 2021 | 75 | 2021 |
| Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate G Zhou, Y Lu, R Li, Q Zhang, WS Hwang, Q Liu, T Vasen, C Chen, H Zhu, ... IEEE Electron Device Letters 32 (11), 1516-1518, 2011 | 72 | 2011 |
| Ballisticity of nanotube field-effect transistors: Role of phonon energy and gate bias SO Koswatta, S Hasan, MS Lundstrom, MP Anantram, DE Nikonov Applied Physics Letters 89 (2), 2006 | 69 | 2006 |
| GIDL in doped and undoped FinFET devices for low-leakage applications P Kerber, Q Zhang, S Koswatta, A Bryant IEEE Electron Device Letters 34 (1), 6-8, 2012 | 67 | 2012 |
| 1D broken-gap tunnel transistor with MOSFET-like on-currents and sub-60mV/dec subthreshold swing SO Koswatta, SJ Koester, W Haensch 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 57 | 2009 |
| Ultra low contact resistivities for CMOS beyond 10-nm node Z Zhang, SO Koswatta, SW Bedell, A Baraskar, M Guillorn, ... IEEE electron device letters 34 (6), 723-725, 2013 | 52 | 2013 |
| Capacitor-based cross-point array for analog neural network with record symmetry and linearity Y Li, S Kim, X Sun, P Solomon, T Gokmen, H Tsai, S Koswatta, Z Ren, ... 2018 IEEE Symposium on VLSI Technology, 25-26, 2018 | 51 | 2018 |
| Low voltage tunnel field-effect transistor (TFET) and method of making same AC Seabaugh, P Fay, X Huili Grace, Z Guangle, LU Yeqing, MA Wistey, ... US Patent 8,796,733, 2014 | 50 | 2014 |
| InAs/AlGaSb heterojunction tunnel field‐effect transistor with tunnelling in‐line with the gate field R Li, Y Lu, SD Chae, G Zhou, Q Liu, C Chen, M Shahriar Rahman, ... physica status solidi c 9 (2), 389-392, 2012 | 50 | 2012 |
