Three-dimensional quantum confinement of charge carriers in self-organized AlGaN nanowires: A viable route to electrically injected deep ultraviolet lasers S Zhao, SY Woo, M Bugnet, X Liu, J Kang, GA Botton, Z Mi Nano letters 15 (12), 7801-7807, 2015 | 137 | 2015 |
An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band S Zhao, X Liu, SY Woo, J Kang, GA Botton, Z Mi Applied Physics Letters 107 (4), 2015 | 99 | 2015 |
Sec‐eliminating the SARS‐CoV‐2 by AlGaN based high power deep ultraviolet light source S Liu, W Luo, D Li, Y Yuan, W Tong, J Kang, Y Wang, D Li, X Rong, ... Advanced functional materials 31 (7), 2008452, 2021 | 78 | 2021 |
Molecular beam epitaxial growth and characterization of Al (Ga) N nanowire deep ultraviolet light emitting diodes and lasers Z Mi, S Zhao, SY Woo, M Bugnet, M Djavid, X Liu, J Kang, X Kong, W Ji, ... Journal of Physics D: Applied Physics 49 (36), 364006, 2016 | 59 | 2016 |
Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells Z Li, J Kang, B Wei Wang, H Li, Y Hsiang Weng, YC Lee, Z Liu, X Yi, ... Journal of Applied Physics 115 (8), 2014 | 57 | 2014 |
Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer H Li, J Kang, P Li, J Ma, H Wang, M Liang, Z Li, J Li, X Yi, G Wang Applied Physics Letters 102 (1), 2013 | 56 | 2013 |
Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well H Li, P Li, J Kang, Z Li, Y Zhang, Z Li, J Li, X Yi, J Li, G Wang Applied Physics Express 6 (5), 052102, 2013 | 53 | 2013 |
Deep‐ultraviolet micro‐LEDs exhibiting high output power and high modulation bandwidth simultaneously D Li, S Liu, Z Qian, Q Liu, K Zhou, D Liu, S Sheng, B Sheng, F Liu, Z Chen, ... Advanced Materials 34 (19), 2109765, 2022 | 52 | 2022 |
Phosphor-free, color-tunable monolithic InGaN light-emitting diodes H Li, P Li, J Kang, Z Li, Z Li, J Li, X Yi, G Wang Applied Physics Express 6 (10), 102103, 2013 | 51 | 2013 |
Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer J Kang, H Li, Z Li, Z Liu, P Ma, X Yi, G Wang Applied Physics Letters 103 (10), 2013 | 35 | 2013 |
Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization H Li, P Li, J Kang, Z Li, Y Zhang, M Liang, Z Li, J Li, X Yi, G Wang Applied Physics Express 6 (9), 092101, 2013 | 27 | 2013 |
Enhanced performance of GaN-based light-emitting diodes with graphene/Ag nanowires hybrid films Z Li, J Kang, Z Liu, C Du, X Lee, X Li, L Wang, X Yi, H Zhu, G Wang AIP Advances 3 (4), 2013 | 26 | 2013 |
Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots H Li, P Li, J Kang, J Ding, J Ma, Y Zhang, X Yi, G Wang Scientific Reports 6 (1), 35217, 2016 | 25 | 2016 |
Four-inch high quality crack-free AlN layer grown on a high-temperature annealed AlN template by MOCVD S Liu, Y Yuan, S Sheng, T Wang, J Zhang, L Huang, X Zhang, J Kang, ... Journal of Semiconductors 42 (12), 122804, 2021 | 24 | 2021 |
Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes P Li, H Li, Z Li, J Kang, X Yi, J Li, G Wang Journal of Applied Physics 117 (7), 2015 | 23 | 2015 |
Pyramid array InGaN/GaN core–shell light emitting diodes with homogeneous multilayer graphene electrodes J Kang, Z Li, H Li, Z Liu, X Li, X Yi, P Ma, H Zhu, G Wang Applied Physics Express 6 (7), 072102, 2013 | 23 | 2013 |
Drive high power UVC‐LED wafer into low‐cost 4‐inch era: effect of strain modulation S Liu, Y Yuan, L Huang, J Zhang, T Wang, T Li, J Kang, W Luo, Z Chen, ... Advanced Functional Materials 32 (19), 2112111, 2022 | 21 | 2022 |
The fabrication of GaN-based nanorod light-emitting diodes with multilayer graphene transparent electrodes Z Li, J Kang, Y Zhang, Z Liu, L Wang, X Lee, X Li, X Yi, H Zhu, G Wang Journal of Applied Physics 113 (23), 2013 | 15 | 2013 |
Low temperature fabrication of hybrid solar cells using co-sensitizer of perovskite and lead sulfide nanoparticles VQ Dang, M Byun, J Kang, C Kim, PH Jung, YD Kim, NE Lee, H Lee Organic Electronics 50, 247-254, 2017 | 14 | 2017 |
Breaking the transverse magnetic-polarized light extraction bottleneck of ultraviolet-C light-emitting diodes using nanopatterned substrates and an inclined reflector W Luo, SM Sadaf, T Ahmed, MZ Baten, MO Faruque, MA Hossain, ... ACS Photonics 9 (9), 3172-3179, 2022 | 13 | 2022 |