关注
Mahendra Pakala
Mahendra Pakala
在 amat.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions
Y Huai, F Albert, P Nguyen, M Pakala, T Valet
Applied Physics Letters 84 (16), 3118-3120, 2004
7582004
Spin transfer switching and spin polarization in magnetic tunnel junctions with MgO and AlOx barriers
Z Diao, D Apalkov, M Pakala, Y Ding, A Panchula, Y Huai
Applied Physics Letters 87 (23), 2005
2972005
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
Z Diao, Y Huai, T Valet, PP Nguyen, M Pakala
US Patent 7,369,427, 2008
2382008
Spin transfer switching in dual MgO magnetic tunnel junctions
Z Diao, A Panchula, Y Ding, M Pakala, S Wang, Z Li, D Apalkov, H Nagai, ...
Applied Physics Letters 90 (13), 2007
2322007
Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer
Y Huai, M Pakala
US Patent 7,110,287, 2006
2322006
Stress assisted current driven switching for magnetic memory applications
M Pakala, Y Huai
US Patent 7,282,755, 2007
2292007
Re-configurable logic elements using heat assisted magnetic tunneling elements
M Pakala, Y Huai
US Patent 7,098,494, 2006
2192006
MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements
Y Huai, M Pakala
US Patent 7,241,631, 2007
2062007
Fabrication of ultrathin metallic membranes on ceramic supports by sputter deposition
V Jayaraman, YS Lin, M Pakala, RY Lin
Journal of membrane science 99 (1), 89-100, 1995
1921995
Hybrid dual spin valve sensor and method for making same
Y Huai, G Anderson, M Pakala, W Chen, N Zhu
US Patent 6,381,105, 2002
1762002
Methods for manufacturing a magnetoresistive structure utilizing heating and cooling
C Kaiser, Q Leng, M Pakala
US Patent 9,093,639, 2015
1672015
Magnetic etch-stop layer for magnetoresistive read heads
M Pakala, R Xiao, C Park
US Patent 8,611,055, 2013
1652013
Method and system for providing a magnetoresistive structure
Q Leng, M Pakala, Y Shen
US Patent 8,545,999, 2013
1632013
Method and system for providing a read sensor having a low magnetostriction free layer
Q Leng, C Park, Y Guo, C Kaiser, M Pakala, S Mao
US Patent 8,194,365, 2012
1632012
Method for providing a magnetic recording transducer
C Park, Q Leng, M Pakala
US Patent 8,381,391, 2013
1592013
Spin tunneling magnetic element promoting free layer crystal growth from a barrier layer interface
M Pakala, C Park
US Patent 8,559,141, 2013
1572013
Magnetoresistive sensors having an improved free layer
Q Leng, C Kaiser, Y Guo, M Pakala, S Mao
US Patent 8,498,084, 2013
1572013
Spin scattering and heat assisted switching of a magnetic element
Y Huai, M Pakala
US Patent 7,126,202, 2006
1562006
Method and system for providing an improved magnetoresistive structure utilizing an oxidation buffer layer
M Mao, W Zhang, M Pakala
US Patent 8,315,019, 2012
1552012
Magnetic sensor having a high spin polarization reference layer
Y Zheng, Q Leng, M Pakala, Z Diao, C Kaiser, CH Yang
US Patent 8,582,253, 2013
1542013
系统目前无法执行此操作,请稍后再试。
文章 1–20