| GaN-on-Si power technology: Devices and applications KJ Chen, O Häberlen, A Lidow, C lin Tsai, T Ueda, Y Uemoto, Y Wu IEEE Transactions on Electron Devices 64 (3), 779-795, 2017 | 1340 | 2017 |
| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 1165 | 2018 |
| From clusters to bulk: A relativistic density functional investigation on a series of gold clusters OD Häberlen, SC Chung, M Stener, N Rösch The Journal of chemical physics 106 (12), 5189-5201, 1997 | 425 | 1997 |
| Quenching of magnetic moments by ligand-metal interactions in nanosized magnetic metal clusters DA van Leeuwen, JM Van Ruitenbeek, LJ De Jongh, A Ceriotti, ... Physical review letters 73 (10), 1432, 1994 | 239 | 1994 |
| A scalar-relativistic extension of the linear combination of Gaussian-type orbitals local density functional method: application to AuH, AuCl and Au2 OD Häberlen, N Rösch Chemical physics letters 199 (5), 491-496, 1992 | 216 | 1992 |
| Threshold voltage instability in p-GaN gate AlGaN/GaN HFETs L Sayadi, G Iannaccone, S Sicre, O Häberlen, G Curatola IEEE Transactions on Electron Devices 65 (6), 2454-2460, 2018 | 205 | 2018 |
| Stability of main-group element-centered gold cluster cations OD Haeberlen, H Schmidbaur, N Roesch Journal of the American Chemical Society 116 (18), 8241-8248, 1994 | 142 | 1994 |
| Effect of phosphine substituents in gold (I) complexes: a theoretical study of MeAuPR3, R= H, Me, Ph OD Haeberlen, N Roesch The Journal of Physical Chemistry 97 (19), 4970-4973, 1993 | 128 | 1993 |
| Influence of buffer carbon doping on pulse and AC behavior of insulated-gate field-plated power AlGaN/GaN HEMTs G Verzellesi, L Morassi, G Meneghesso, M Meneghini, E Zanoni, ... IEEE Electron Device Letters 35 (4), 443-445, 2014 | 115 | 2014 |
| On the Origin of the -Losses in Soft-Switching GaN-on-Si Power HEMTs M Guacci, M Heller, D Neumayr, D Bortis, JW Kolar, G Deboy, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (2), 679-694, 2018 | 107 | 2018 |
| C. l. Tsai, T. Ueda, Y. Uemoto, and Y. Wu,“GaN-on-Si power technology: Devices and applications,” KJ Chen, O Häberlen, A Lidow IEEE Transactions on Electron Devices 64 (3), 779-795, 2017 | 106 | 2017 |
| Relevance of relativistic exchange-correlation functionals and of finite nuclei in molecular density-functional calculations M Mayer, OD Häberlen, N Rösch Physical Review A 54 (6), 4775, 1996 | 101 | 1996 |
| Method for manufacturing a semiconductor component G Deboy, W Friza, O Häberlen, M Rüb, H Strack US Patent 6,649,459, 2003 | 93 | 2003 |
| Semiconductor device O Haeberlen, J Krumrey, F Hirler, W Rieger US Patent 8,022,474, 2011 | 80 | 2011 |
| Asymmetric localization of titanium in carbon molecule (c28) BI Dunlap, OD Haeberlen, N Roesch The Journal of Physical Chemistry 96 (23), 9095-9097, 1992 | 75 | 1992 |
| Degradation mechanisms of GaN HEMTs with p-type gate under forward gate bias overstress M Ruzzarin, M Meneghini, A Barbato, V Padovan, O Haeberlen, ... IEEE Transactions on Electron Devices 65 (7), 2778-2783, 2018 | 70 | 2018 |
| Relativistic density‐functional studies of naked and ligated gold clusters OD Häberlen, SC Chung, N Rösch, N Rösch International Journal of Quantum Chemistry 52 (S28), 595-610, 1994 | 70 | 1994 |
| Perspective of loss mechanisms for silicon and wide band-gap power devices G Deboy, O Haeberlen, M Treu CPSS Transactions on Power electronics and applications 2 (2), 89-100, 2017 | 69 | 2017 |
| Si, SiC and GaN power devices: An unbiased view on key performance indicators G Deboy, M Treu, O Häberlen, D Neumayr 2016 IEEE International Electron Devices Meeting (IEDM), 20.2. 1-20.2. 4, 2016 | 68 | 2016 |
| Application specific trade-offs for WBG SiC, GaN and high end Si power switch technologies R Rupp, T Laska, O Häberlen, M Treu 2014 IEEE International Electron Devices Meeting, 2.3. 1-2.3. 4, 2014 | 62 | 2014 |
