| Mechanisms of Implantation Damage Formation in AlxGa1–xN Compounds DN Faye, E Wendler, M Felizardo, S Magalhães, E Alves, F Brunner, ... The Journal of Physical Chemistry C 120 (13), 7277-7283, 2016 | 38 | 2016 |
| Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices DN Faye, M Fialho, S Magalhães, E Alves, NB Sedrine, J Rodrigues, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2016 | 21 | 2016 |
| Incorporation of europium into GaN nanowires by ion implantation DN Faye, X Biquard, E Nogales, M Felizardo, M Peres, ... The Journal of Physical Chemistry C 123 (18), 11874-11887, 2019 | 13 | 2019 |
| Crystal damage analysis of implanted AlxGa1-xN (0≤ x≤ 1) by ion beam techniques DN Faye, M Döbeli, E Wendler, F Brunner, M Weyers, S Magalhães, ... Surface and Coatings Technology 355, 55-60, 2018 | 11 | 2018 |
| Optical investigations of europium ion implanted in nitride-based diode structures NB Sedrine, J Rodrigues, J Cardoso, DN Faye, M Fialho, S Magalhães, ... Surface and Coatings Technology 355, 40-44, 2018 | 10 | 2018 |
| Crystal mosaicity determined by a novel layer deconvolution Williamson–Hall method S Magalhães, JS Cabaço, R Mateus, DN Faye, DR Pereira, M Peres, ... CrystEngComm 23 (10), 2048-2062, 2021 | 9 | 2021 |
| Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications J Cardoso, N Ben Sedrine, A Alves, MA Martins, M Belloeil, B Daudin, ... Applied Physics Letters 113 (20), 2018 | 8 | 2018 |
| Eu-doped AlGaN/GaN superlattice-based diode structure for red lighting: excitation mechanisms and active sites NB Sedrine, J Rodrigues, DN Faye, AJ Neves, E Alves, M Bockowski, ... ACS Appl. Nano Mater 1, 3845-3858, 2018 | 8 | 2018 |
| Structural and optical studies of aluminosilicate films doped with (Tb3+, Er3+)/Yb3+ by ion implantation DN Faye, M Dias, RE Rojas-Hernandez, N Sousa, LF Santos, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2019 | 7 | 2019 |
| Simulating the effect of Ar+ energy implantation on the strain propagation in AlGaN JS Cabaço, DND Faye, JP Araujo, E Alves, S Magalhães Journal of Physics D: Applied Physics 54 (24), 245301, 2021 | 6 | 2021 |
| Eu-Doped AlGaN/GaN superlattice-based diode structure for red lighting: excitation mechanisms and active sites N Ben Sedrine, J Rodrigues, DN Faye, AJ Neves, E Alves, M Bockowski, ... ACS Applied Nano Materials 1 (8), 3845-3858, 2018 | 6 | 2018 |
| Investigation of interdiffusion in thin films of ZnO/ZnCdO grown by molecular beam epitaxy M Stachowicz, JM Sajkowski, MA Pietrzyk, DN Faye, S Magalhaes, ... Thin Solid Films 781, 140003, 2023 | 5 | 2023 |
| Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation P Jóźwik, JPS Cardoso, DF Carvalho, MRP Correia, MC Sequeira, ... Physical Chemistry Chemical Physics 24 (42), 25773-25787, 2022 | 5 | 2022 |
| Eu3+ optical activation engineering in AlxGa1-xN nanowires for red solid-state nano-emitters J Cardoso, G Jacopin, DN Faye, AM Siladie, B Daudin, E Alves, K Lorenz, ... Applied Materials Today 22, 100893, 2021 | 5 | 2021 |
| PAMBE grown InN layers electrical conduction by low frequency noise technique GR Mutta, D Faye, T Brazzini, L Méchin, JM Routoure, B Guillet, F Calle, ... ICDS 27 (27th International Conference on Defects in Semiconductors 2013), 2013 | | 2013 |
| Surface or volume conduction in InN thin films? JM Routoure, GR Mutta, D Faye, B Guillet, L Méchin, ... INCF 2013 (20th International Conference on Noise and Fluctuations), 2013 | | 2013 |
| Bruit en 1/f dans des couches minces de Nitrure d'Indium GR Mutta, D Faye, B Guillet, L Méchin, JM Routoure, P Ruterana JMC13 (13èmes Journées de la Matière Condensée), 2012 | | 2012 |
| A5-IMPACT OF ANNEALING TEMPERATURE ON STRUCTURAL AND OPTICAL PROPERTIES OF Ga2O3 THIN FILMS DEPOSITED USING RADIO FREQUENCY MAGNETRON SPUTTERING E Amar, M Peres, D Verheij, P Jozwik, M Sequeira, DR Pereira, DN Faye, ... Book of Abstracts, 55, 0 | | |
| Structural and Optical Properties of GaN Nanowires and Thin Films Implanted with Eu M Felizardo, M Peres, N Franco, DN Faye, E Alves, K Lorenz, E Nogales, ... | | |
