| Lateral heterostructure field-effect transistors based on two-dimensional material stacks with varying thickness and energy filtering source EG Marin, D Marian, M Perucchini, G Fiori, G Iannaccone ACS nano 14 (2), 1982-1989, 2020 | 58 | 2020 |
| Modeling of electron devices based on 2-D materials EG Marin, M Perucchini, D Marian, G Iannaccone, G Fiori IEEE Transactions on Electron Devices 65 (10), 4167-4179, 2018 | 46 | 2018 |
| Impact of MoS2 layer transfer on electrostatics of MoS2/SiO2 interface VV Afanas’ev, D Chiappe, M Perucchini, M Houssa, C Huyghebaert, ... Nanotechnology 30 (5), 055702, 2018 | 16 | 2018 |
| A SPICE compact model for ambipolar 2-D-material FETs aiming at circuit design SA Ahsan, SK Singh, MA Mir, M Perucchini, DK Polyushkin, T Mueller, ... IEEE Transactions on Electron Devices 68 (6), 3096-3103, 2021 | 15 | 2021 |
| Transport properties of chemically synthesized MoS2–Dielectric effects and defects scattering M Mongillo, D Chiappe, G Arutchelvan, I Asselberghs, M Perucchini, ... Applied Physics Letters 109 (23), 2016 | 15 | 2016 |
| Electronic transport in 2d‐based printed fets from a multiscale perspective M Perucchini, D Marian, EG Marin, T Cusati, G Iannaccone, G Fiori Advanced Electronic Materials 8 (5), 2100972, 2022 | 13 | 2022 |
| Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite D Marian, EG Marin, M Perucchini, G Iannaccone, G Fiori Journal of Computational Electronics 22 (5), 1327-1337, 2023 | 8 | 2023 |
| Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate M Perucchini, E G Marin, D Marian, G Iannaccone, G Fiori Applied Physics Letters 113 (18), 2018 | 6 | 2018 |
| Modeling of electron devices based on two-dimensional materials EG Marin, M Perucchini, D Marian, G Iannaccone, G Fiori IEEE Trans. Elec. Dev 85, 4167, 2018 | 1 | 2018 |
| Multi-scale modeling of 2D-material based devices M Perucchini | | 2020 |
| Interface control of 2D materials to enable wafer scale transfer and tuning of electronic properties D Chiappe, A Leonhardt, CJ Lockhart de la Rosa, I Asselberghs, O Virkki, ... | | 2017 |
| Multiscale simulations of ink-jet printed devices D Marian, PK Dubey, M Perucchini, EG Marin, G Fiori | | |
