| Modeling of Forward Gate Leakage Current in MOSHEMT Using Trap-Assisted Tunneling and Poole-Frenkel Emission R Swain, K Jena, TR Lenka IEEE Transactions on Electron Devices 63 (6), 2346-2352, 2016 | 30 | 2016 |
| Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices K Jena, R Swain, TR Lenka International Journal of Numerical Modelling: Electronic Networks, Devices …, 2016 | 30 | 2016 |
| Modeling and simulation of 2DEG density and intrinsic capacitances in AlInN/GaN MOSHEMT G Amarnath, R Swain, TR Lenka International Journal of Numerical Modelling: Electronic Networks, Devices …, 2018 | 23 | 2018 |
| Enhanced Photodetection by Glancing Angle Deposited Vertically Aligned TiO2 Nanowires B Shougaijam, R Swain, C Ngangbam, TR Lenka IEEE Transactions on Nanotechnology 15 (3), 389-394, 2016 | 23 | 2016 |
| Impact of oxide thickness on gate capacitance–Modelling and comparative analysis of GaN-based MOSHEMTs K JENA, R SWAIN, TR LENKA Pramana 85 (6), 1221-1232, 2015 | 23 | 2015 |
| Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice‐matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor K Jena, R Swain, TR Lenka IET Circuits, Devices & Systems 10 (5), 423-432, 2016 | 21 | 2016 |
| Design and modelling of highly sensitive glucose biosensor for lab-on-chip applications MD Prakash, SL Nihal, S Ahmadsaidulu, R Swain, AK Panigrahy Silicon 14 (14), 8621-8627, 2022 | 20 | 2022 |
| Impact of a drain field plate on the breakdown characteristics of AlInN/GaN MOSHEMT K Jena, R Swain, TR Lenka Journal of the Korean Physical Society 67, 1592-1596, 2015 | 16 | 2015 |
| Interface DOS Dependent Analytical Model Development for DC Characteristics of Normally-off AlN/GaN MOSHEMT R Swain, K Jena, TR Lenka Superlattices and Microstructures 84, 54-65, 2015 | 16 | 2015 |
| Modelling of capacitance and threshold voltage for ultrathin normally-off AlGaN/GaN MOSHEMT R Swain, K Jena, TR Lenka Pramana 88, 1-7, 2017 | 15 | 2017 |
| Modeling and simulation of oxide dependent 2DEG sheet charge density in AlGaN/GaN MOSHEMT R Swain, J Panda, K Jena, TR Lenka Journal of Computational Electronics 14 (3), 754-761, 2015 | 15 | 2015 |
| Impact of barrier thickness on gate capacitance—modeling and comparative analysis of GaN based MOSHEMTs K Jena, R Swain, TR Lenka Journal of Semiconductors 36 (3), 034003, 2015 | 13 | 2015 |
| Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT R Swain, K Jena, TR Lenka Materials Science in Semiconductor Processing 53, 66-71, 2016 | 12 | 2016 |
| Design and analysis of gate stack silicon-on-insulator nanosheet FET for low power applications R Yuvaraj, A Karuppannan, AK Panigrahy, R Swain Silicon 15 (4), 1739-1746, 2023 | 11 | 2023 |
| Analysis of morphological, structural and electrical properties of annealed TiO2 nanowires deposited by GLAD technique B Shougaijam, R Swain, C Ngangbam, TR Lenka Journal of Semiconductors 38 (5), 053001, 2017 | 11 | 2017 |
| Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT J Panda, K Jena, R Swain, TR Lenka Journal of Semiconductors 37 (4), 044003, 2016 | 10 | 2016 |
| Physics‐based mathematical model of 2DEG sheet charge density and DC characteristics of AlInN/AlN/GaN MOSHEMT K Jena, R Swain, TR Lenka International Journal of Numerical Modelling: Electronic Networks, Devices …, 2017 | 9 | 2017 |
| Impact of AlN Spacer on Analog Performance of Lattice-Matched AlInN/AlN/GaN MOSHEMT K Jena, R Swain, TR Lenka Journal of Electronic Materials 45 (4), 2172-2177, 2016 | 8 | 2016 |
| Comparative study of AlN/GaN HEMT and MOSHEMT structures by varying oxide thickness R Swain, K Jena, A Gaini, TR Lenka 2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC), 128-131, 2014 | 7 | 2014 |
| Modelling of fin width dependent threshold voltage in fin shaped nano channel AlGaN/GaN HEMT A Chakrabarty, R Swain Superlattices and Microstructures 141, 106497, 2020 | 6 | 2020 |
Trupti Ranjan LenkaNational Institute of Technology Silchar, Assam, INDIA在 ieee.org 的电子邮件经过验证
