High mobilities in layered InSe transistors with indium‐encapsulation‐induced surface charge doping M Li, CY Lin, SH Yang, YM Chang, JK Chang, FS Yang, C Zhong, ... Advanced Materials 30 (44), 1803690, 2018 | 139 | 2018 |
Origin of Noise in Layered MoTe₂ Transistors and its Possible Use for Environmental Sensors. YF Lin, Y Xu, CY Lin, YW Suen, M Yamamoto, S Nakaharai, K Ueno, ... Advanced Materials (Deerfield Beach, Fla.) 27 (42), 6612-6619, 2015 | 86 | 2015 |
Reversible and Precisely Controllable p/n‐Type Doping of MoTe2 Transistors through Electrothermal Doping YM Chang, SH Yang, CY Lin, CH Chen, CH Lien, WB Jian, K Ueno, ... Advanced Materials 30 (13), 1706995, 2018 | 79 | 2018 |
Analog Circuit Applications Based on All‐2D Ambipolar ReSe2 Field‐Effect Transistors KC Lee, SH Yang, YS Sung, YM Chang, CY Lin, FS Yang, M Li, ... Advanced Functional Materials 29 (22), 1809011, 2019 | 49 | 2019 |
Low‐voltage operational, low‐power consuming, and high sensitive tactile switch based on 2D layered InSe tribotronics M Li, FS Yang, YC Hsiao, CY Lin, HM Wu, SH Yang, HR Li, CH Lien, ... Advanced Functional Materials 29 (19), 1809119, 2019 | 39 | 2019 |
Two-dimensional MoTe2 materials: From synthesis, identification, and charge transport to electronics applications YM Chang, CY Lin, YF Lin, K Tsukagoshi Japanese Journal of Applied Physics 55 (11), 1102A1, 2016 | 36 | 2016 |
Multifunctional full-visible-spectrum optoelectronics based on a van der Waals heterostructure SH Yang, KC Lee, MY Tsai, YM Chang, CY Lin, FS Yang, K Watanabe, ... Nano Energy 66, 104107, 2019 | 33 | 2019 |
Inverse paired-pulse facilitation in neuroplasticity based on interface-boosted charge trapping layered electronics KC Lee, M Li, YH Chang, SH Yang, CY Lin, YM Chang, FS Yang, ... Nano Energy 77, 105258, 2020 | 28 | 2020 |
Negative-differential-resistance devices achieved by band-structure engineering in silicene under periodic potentials CH Chen, WW Li, YM Chang, CY Lin, SH Yang, Y Xu, YF Lin Physical Review Applied 10 (4), 044047, 2018 | 25 | 2018 |
Defect Engineering in Ambipolar Layered Materials for Mode‐Regulable Nociceptor M Li, FS Yang, HC Hsu, WH Chen, CN Kuo, JY Chen, SH Yang, TH Yang, ... Advanced Functional Materials 31 (5), 2007587, 2021 | 23 | 2021 |
Atomically thin van der Waals tunnel field-effect transistors and its potential for applications SH Yang, YT Yao, Y Xu, CY Lin, YM Chang, YW Suen, H Sun, CH Lien, ... Nanotechnology 30 (10), 105201, 2019 | 22 | 2019 |
Photoactive Electro‐Controlled Visual Perception Memory for Emulating Synaptic Metaplasticity and Hebbian Learning MY Tsai, KC Lee, CY Lin, YM Chang, K Watanabe, T Taniguchi, CH Ho, ... Advanced Functional Materials 31 (40), 2105345, 2021 | 20 | 2021 |
Touch-modulated van der Waals heterostructure with self-writing power switch for synaptic simulation C Gao, Q Nie, CY Lin, F Huang, L Wang, W Xia, X Wang, Z Hu, M Li, ... Nano Energy 91, 106659, 2022 | 17 | 2022 |
Mimic drug dosage modulation for neuroplasticity based on charge‐trap layered electronics C Gao, MP Lee, M Li, KC Lee, FS Yang, CY Lin, K Watanabe, T Taniguchi, ... Advanced Functional Materials 31 (5), 2005182, 2021 | 15 | 2021 |
Oxygen-Sensitive Layered MoTe2 Channels for Environmental Detection SH Yang, CY Lin, YM Chang, M Li, KC Lee, CF Chen, FS Yang, CH Lien, ... ACS applied materials & interfaces 11 (50), 47047-47053, 2019 | 14 | 2019 |
A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping MY Tsai, CT Huang, CY Lin, MP Lee, FS Yang, M Li, YM Chang, ... Nature Electronics 6 (10), 755-764, 2023 | 9 | 2023 |
Carrier-capture-assisted optoelectronics based on van der Waals materials to imitate medicine-acting metaplasticity Q Nie, C Gao, FS Yang, KC Lee, CY Lin, X Wang, CH Ho, CH Lien, SP Lin, ... npj 2D Materials and Applications 5 (1), 60, 2021 | 8 | 2021 |
Reversible Charge‐Polarity Control for Multioperation‐Mode Transistors Based on van der Waals Heterostructures CF Chen, SH Yang, CY Lin, MP Lee, MY Tsai, FS Yang, YM Chang, M Li, ... Advanced Science 9 (24), 2106016, 2022 | 5 | 2022 |
Facile and Reversible Carrier-Type Manipulation of Layered MoTe2 Toward Long-Term Stable Electronics M Li, CY Lin, YM Chang, SH Yang, MP Lee, CF Chen, KC Lee, FS Yang, ... ACS applied materials & interfaces 12 (38), 42918-42924, 2020 | 5 | 2020 |
A Triode Device with a Gate Controllable Schottky Barrier: Germanium Nanowire Transistors and Their Applications CY Lin, CF Chen, YM Chang, SH Yang, KC Lee, WW Wu, WB Jian, YF Lin Small 15 (33), 1900865, 2019 | 4 | 2019 |