A flexible and thin graphene/silver nanowires/polymer hybrid transparent electrode for optoelectronic devices H Dong, Z Wu, Y Jiang, W Liu, X Li, B Jiao, W Abbas, X Hou ACS applied materials & interfaces 8 (45), 31212-31221, 2016 | 120 | 2016 |
High energy storage efficiency and thermal stability of A‐site‐deficient and 110‐textured BaTiO3–BiScO3 thin films W Abbas, D Ho, A Pramanick Journal of the American Ceramic Society 103 (5), 3168-3177, 2020 | 19 | 2020 |
High Energy Efficiency and Thermal Stability of BaTiO3–BiScO3 Thin Films Based on Defects Engineering W Abbas, D Ho, A Pramanick ACS Applied Electronic Materials 3 (3), 1097-1106, 2021 | 11 | 2021 |
Long-Term Lifetime Prediction of Power MOSFET Devices Based on LSTM and GRU Algorithms MS Ibrahim, W Abbas, M Waseem, C Lu, HH Lee, J Fan, KH Loo Mathematics 11 (15), 3283, 2023 | 9 | 2023 |
The effect of pre-existing voids on solder reliability at different thermomechanical stress levels: Experimental assessment A Waseem, MS Ibrahim, C Lu, M Waseem, HH Lee, KH Loo Materials & Design 233, 112275, 2023 | 8 | 2023 |
Defect and texture engineering of relaxor thin films for High-Power energy storage applications W Abbas, MS Ibrahim, M Waseem, C Lu, HH Lee, S Fazal, KH Loo, ... Chemical Engineering Journal, 148943, 2024 | 5 | 2024 |
Critical Effect of Film–Electrode Interface on Enhanced Energy Storage Performance of BaTiO3–BiScO3 Ferroelectric Thin Films W Abbas, W Lin, JJ Kai, D Ho, A Pramanick ACS Applied Electronic Materials 3 (11), 4726-4733, 2021 | 5 | 2021 |
Oxygen octahedral tilt ordering in (Na1/2Bi1/2) TiO3 ferroelectric thin films A Pramanick, AR Paterson, L Denis, W Abbas, G Niu, W Ren, J Zhao, ... Applied Physics Letters 116 (2), 2020 | 2 | 2020 |
Precursor Prediction and Early Warning of Power MOSFET Failure Using Machine Learning with Model Uncertainty Considered Y Hou, C Lu, W Abbas, MS Ibrahim, M Waseem, HH Lee, KH Loo IEEE Journal of Emerging and Selected Topics in Power Electronics, 2024 | | 2024 |
Evaluation of Temperature-Humidity-Reverse Bias Robustness of 3rd Generation 650V Class 4H-SiC Discrete Power MOSFET Devices M Waseem, MS Ibrahim, W Abbas, C Lu, H Yuluo, HH Lee, Z Hao, KH Loo 2023 IEEE International Integrated Reliability Workshop (IIRW), 1-6, 2023 | | 2023 |