| Gallium nitride-based complementary logic integrated circuits Z Zheng, L Zhang, W Song, S Feng, H Xu, J Sun, S Yang, T Chen, J Wei, ... Nature Electronics 4 (8), 595-603, 2021 | 154 | 2021 |
| High and / Ratio Enhancement-Mode Buried -Channel GaN MOSFETs on -GaN Gate Power HEMT Platform Z Zheng, W Song, L Zhang, S Yang, J Wei, KJ Chen IEEE Electron Device Letters 41 (1), 26-29, 2019 | 101 | 2019 |
| p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability L Zhang, Z Zheng, S Yang, W Song, J He, KJ Chen IEEE Electron Device Letters 42 (1), 22-25, 2020 | 70 | 2020 |
| 650-V double-channel lateral Schottky barrier diode with dual-recess gated anode J Lei, J Wei, G Tang, Z Zhang, Q Qian, Z Zheng, M Hua, KJ Chen IEEE Electron Device Letters 39 (2), 260-263, 2017 | 69 | 2017 |
| Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy S Yang, S Huang, J Wei, Z Zheng, Y Wang, J He, KJ Chen IEEE Electron Device Letters 41 (5), 685-688, 2020 | 63 | 2020 |
| E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs C Wang, M Hua, J Chen, S Yang, Z Zheng, J Wei, L Zhang, KJ Chen IEEE Electron Device Letters 41 (4), 545-548, 2020 | 54 | 2020 |
| OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs J Chen, M Hua, J Wei, J He, C Wang, Z Zheng, KJ Chen IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (3 …, 2020 | 49 | 2020 |
| Short Circuit Capability and Short Circuit Induced Instability of a 1.2-kV SiC Power MOSFET J Sun, J Wei, Z Zheng, Y Wang, KJ Chen IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019 | 49 | 2019 |
| Planar GaN Power Integration–The World is Flat KJ Chen, J Wei, G Tang, H Xu, Z Zheng, L Zhang, W Song 2020 IEEE International Electron Devices Meeting (IEDM), 27.1. 1-27.1. 4, 2020 | 46 | 2020 |
| Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters Z Zheng, W Song, L Zhang, S Yang, J Wei, KJ Chen IEEE Electron Device Letters 42 (1), 26-29, 2020 | 43 | 2020 |
| Dependence of Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET M Hua, J Wei, Q Bao, Z Zhang, Z Zheng, KJ Chen IEEE Electron Device Letters 39 (3), 413-416, 2018 | 42 | 2018 |
| 2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current Q Qian, J Lei, J Wei, Z Zhang, G Tang, K Zhong, Z Zheng, KJ Chen npj 2D Materials and Applications 3 (1), 24, 2019 | 37 | 2019 |
| Incorporating the Dynamic Threshold Voltage Into the SPICE Model of Schottky-Type p-GaN Gate Power HEMTs H Xu, J Wei, R Xie, Z Zheng, J He, KJ Chen IEEE Transactions on Power Electronics 36 (5), 5904-5914, 2020 | 36 | 2020 |
| Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests J Sun, J Wei, Z Zheng, KJ Chen IEEE Transactions on Industrial Electronics 68 (9), 8798-8807, 2020 | 33 | 2020 |
| Reverse-blocking normally-off GaN double-channel MOS-HEMT with low reverse leakage current and low on-state resistance J Lei, J Wei, G Tang, Z Zhang, Q Qian, Z Zheng, M Hua, KJ Chen IEEE Electron Device Letters 39 (7), 1003-1006, 2018 | 33 | 2018 |
| Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots P Wang, S Lin, G Ding, X Li, Z Wu, S Zhang, Z Xu, S Xu, Y Lu, W Xu, ... Applied Physics Letters 108 (16), 2016 | 33 | 2016 |
| An interdigitated GaN MIS-HEMT/SBD normally-off power switching device with low ON-resistance and low reverse conduction loss J Lei, J Wei, G Tang, Q Qian, M Hua, Z Zhang, Z Zheng, KJ Chen 2017 IEEE International Electron Devices Meeting (IEDM), 25.2. 1-25.2. 4, 2017 | 31 | 2017 |
| A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications G Lyu, Y Wang, J Wei, Z Zheng, J Sun, L Zhang, KJ Chen IEEE Transactions on Power Electronics 35 (9), 9669-9679, 2020 | 30 | 2020 |
| Dynamic OFF-State Current (Dynamic) in-GaN Gate HEMTs With an Ohmic Gate Contact Y Wang, M Hua, G Tang, J Lei, Z Zheng, J Wei, KJ Chen IEEE Electron Device Letters 39 (9), 1366-1369, 2018 | 30 | 2018 |
| Reverse-bias stability and reliability of hole-barrier-free E-mode LPCVD-SiNx/GaN MIS-FETs M Hua, J Wei, Q Bao, J He, Z Zhang, Z Zheng, J Lei, KJ Chen 2017 IEEE International Electron Devices Meeting (IEDM), 33.2. 1-33.2. 4, 2017 | 28 | 2017 |
Kevin J. ChenHong Kong University of Science and Technology在 ust.hk 的电子邮件经过验证
