| Growth kinetics and crystal structure of semiconductor nanowires VG Dubrovskii, NV Sibirev, JC Harmand, F Glas Physical Review B 78 (23), 235301, 2008 | 398 | 2008 |
| Nucleation theory and growth of nanostructures VG Dubrovskii Springer, 2014 | 377 | 2014 |
| Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment VG Dubrovskii, GE Cirlin, IP Soshnikov, AA Tonkikh, NV Sibirev, ... Physical review B 71 (20), 205325, 2005 | 373 | 2005 |
| Self-catalyzed, pure zincblende GaAs nanowires grown on Si (111) by molecular beam epitaxy GE Cirlin, VG Dubrovskii, YB Samsonenko, AD Bouravleuv, K Durose, ... Physical Review B 82 (3), 035302, 2010 | 259 | 2010 |
| Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy VG Dubrovskii, NV Sibirev, GE Cirlin, JC Harmand, VM Ustinov Physical Review E 73 (2), 021603, 2006 | 251 | 2006 |
| Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires VG Dubrovskii, NV Sibirev, GE Cirlin, IP Soshnikov, WH Chen, R Larde, ... Physical Review B 79 (20), 205316, 2009 | 247 | 2009 |
| Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires VG Dubrovskii, NV Sibirev Physical review B 77 (3), 035414, 2008 | 231 | 2008 |
| Semiconductor nanowhiskers: synthesis, properties, and applications VG Dubrovskii, GE Cirlin, VM Ustinov Semiconductors 43, 1539-1584, 2009 | 215 | 2009 |
| Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis M Tchernycheva, L Travers, G Patriarche, F Glas, JC Harmand, GE Cirlin, ... Journal of Applied Physics 102 (9), 2007 | 192 | 2007 |
| New mode of vapor− liquid− solid nanowire growth VG Dubrovskii, GE Cirlin, NV Sibirev, F Jabeen, JC Harmand, P Werner Nano letters 11 (3), 1247-1253, 2011 | 178 | 2011 |
| Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates GE Cirlin, VG Dubrovskii, IP Soshnikov, NV Sibirev, YB Samsonenko, ... physica status solidi (RRL)–Rapid Research Letters 3 (4), 112-114, 2009 | 175 | 2009 |
| Kinetics of the initial stage of coherent island formation in heteroepitaxial systems VG Dubrovskii, GE Cirlin, VM Ustinov Physical Review B 68 (7), 075409, 2003 | 175 | 2003 |
| Growth rate of a crystal facet of arbitrary size and growth kinetics of vertical nanowires VG Dubrovskii, NV Sibirev Physical Review E 70 (3), 031604, 2004 | 166 | 2004 |
| Self-equilibration of the diameter of Ga-catalyzed GaAs nanowires VG Dubrovskii, T Xu, AD Álvarez, SR Plissard, P Caroff, F Glas, ... Nano letters 15 (8), 5580-5584, 2015 | 142 | 2015 |
| Template-assisted scalable nanowire networks M Friedl, K Cerveny, P Weigele, G Tütüncüoglu, S Martí-Sánchez, ... Nano letters 18 (4), 2666-2671, 2018 | 134 | 2018 |
| Role of nonlinear effects in nanowire growth and crystal phase VG Dubrovskii, NV Sibirev, GE Cirlin, AD Bouravleuv, YB Samsonenko, ... Physical Review B 80 (20), 205305, 2009 | 125 | 2009 |
| General form of the dependences of nanowire growth rate on the nanowire radius VG Dubrovskii, NV Sibirev Journal of crystal growth 304 (2), 504-513, 2007 | 119 | 2007 |
| Phase selection in self-catalyzed GaAs nanowires F Panciera, Z Baraissov, G Patriarche, VG Dubrovskii, F Glas, L Travers, ... Nano letters 20 (3), 1669-1675, 2020 | 116 | 2020 |
| Quantitative description for the growth rate of self-induced GaN nanowires V Consonni, VG Dubrovskii, A Trampert, L Geelhaar, H Riechert Physical Review B 85 (15), 155313, 2012 | 115 | 2012 |
| Полупроводниковые нитевидные нанокристаллы: синтез, свойства, применения О б з о р ВГ Дубровский, ГЭ Цырлин, ВМ Устинов Физика и техника полупроводников 43 (12), 1585-1628, 2009 | 113 | 2009 |
