| Short-circuit performance investigation of 10kV+ rated SiC n-IGBT I Almpanis, P Evans, M Antoniou, P Gammon, L Empringham, F Udrea, ... 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022 | 4 | 2022 |
| Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement I Almpanis, M Antoniou, P Evans, L Empringham, P Gammon, F Undrea, ... IEEE Transactions on Industry Applications, 2024 | 3 | 2024 |
| Influence of emitter side design on the unintentional turn-on of 10kV+ SiC n-IGBTs I Almpanis, M Antoniou, P Evans, L Empringham, P Gammon, F Udrea, ... 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 1-6, 2022 | 3 | 2022 |
| 10kV+ rated SiC n-IGBTs: Novel collector-side design approach breaking the trade-off between dV/dt and device efficiency I Almpanis, P Evans, M Antoniou, PM Gammon, L Empringham, F Udrea, ... Key Engineering Materials 946, 125-133, 2023 | 2 | 2023 |
| Datasheet Based SiC MOSFET Models for Accurate Switching Waveform Prediction in Virtual Prototyping Applications Z Zhang, A Fayyaz, I Almpanis, Y Riache, G Valente, N Lophitis, P Evans 2023 IEEE Design Methodologies Conference (DMC), 1-6, 2023 | | 2023 |
| Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances I Almpanis, P Evans, K Li, N Lophitis 2023 IEEE Design Methodologies Conference (DMC), 1-6, 2023 | | 2023 |
| 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) A Borghese, A Aujla-Jones, A Agarwal, A Arvanitopoulos, A Irace, ... | | |
| Are we on the brink of a post-silicon era in aircraft power electronics? N Lophitis, I Almpanis, P Wheeler Institute of Materials, Minerals & Mining, 0 | | |
Neophytos LophitisAssistant Professor at University of Nottingham在 Nottingham.ac.uk 的电子邮件经过验证
