| Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire T Li, W Guo, L Ma, W Li, Z Yu, Z Han, S Gao, L Liu, D Fan, Z Wang, ... Nature Nanotechnology 16 (11), 1201-1207, 2021 | 434 | 2021 |
| Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices W Li, J Zhou, S Cai, Z Yu, J Zhang, N Fang, T Li, Y Wu, T Chen, X Xie, ... Nature Electronics 2 (12), 563-571, 2019 | 262 | 2019 |
| Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire L Liu, T Li, L Ma, W Li, S Gao, W Sun, R Dong, X Zou, D Fan, L Shao, ... Nature 605 (7908), 69-75, 2022 | 219 | 2022 |
| Approaching the quantum limit in two-dimensional semiconductor contacts W Li, X Gong, Z Yu, L Ma, W Sun, S Gao, Ç Köroğlu, W Wang, L Liu, T Li, ... Nature 613 (7943), 274-279, 2023 | 155 | 2023 |
| Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix W Meng, F Xu, Z Yu, T Tao, L Shao, L Liu, T Li, K Wen, J Wang, L He, ... Nature Nanotechnology 16 (11), 1231-1236, 2021 | 143 | 2021 |
| Sensitive and Ultrabroadband Phototransistor Based on Two‐Dimensional Bi2O2Se Nanosheets T Tong, Y Chen, S Qin, W Li, J Zhang, C Zhu, C Zhang, X Yuan, X Chen, ... Advanced Functional Materials 29 (50), 1905806, 2019 | 119 | 2019 |
| Sub-thermionic, ultra-high-gain organic transistors and circuits Z Luo, B Peng, J Zeng, Z Yu, Y Zhao, J Xie, R Lan, Z Ma, L Pan, K Cao, ... Nature Communications 12 (1), 1928, 2021 | 101 | 2021 |
| Negative capacitance 2D MoS2transistors with sub-60mV/dec subthreshold swing over 6 orders, 250 μA/μm current density, and nearly-hysteresis-free Z Yu, H Wang, W Li, S Xu, X Song, S Wang, P Wang, P Zhou, Y Shi, ... 2017 IEEE International Electron Devices Meeting (IEDM), 23.6. 1-23.6. 4, 2017 | 57 | 2017 |
| An in-memory computing architecture based on a duplex two-dimensional material structure for in situ machine learning H Ning, Z Yu, Q Zhang, H Wen, B Gao, Y Mao, Y Li, Y Zhou, Y Zhou, ... Nature nanotechnology 18 (5), 493-500, 2023 | 48 | 2023 |
| Efficiency at maximum power of a quantum heat engine based on two coupled oscillators J Wang, Z Ye, Y Lai, W Li, J He Physical Review E 91 (6), 062134, 2015 | 48 | 2015 |
| Ultralow contact resistance in organic transistors via orbital hybridization J Zeng, D He, J Qiao, Y Li, L Sun, W Li, J Xie, S Gao, L Pan, P Wang, Y Xu, ... Nature Communications 14 (1), 324, 2023 | 31 | 2023 |
| High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi Contact W Li, D Fan, L Shao, F Huang, L Liang, T Li, Y Xu, X Tu, P Wang, Z Yu, ... 2021 IEEE International Electron Devices Meeting (IEDM), 37.3. 1-37.3. 4, 2021 | 17 | 2021 |
| Reducing the power consumption of two-dimensional logic transistors W Li, H Ning, Z Yu, Y Shi, X Wang Journal of Semiconductors 40 (9), 091002, 2019 | 14 | 2019 |
| Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors Z Yu, Y Zhu, W Li, Y Shi, G Zhang, Y Chai, X Wang 2018 IEEE International Electron Devices Meeting (IEDM), 22.4. 1-22.4. 4, 2018 | 14 | 2018 |
| Boosting the Sensitivity of WSe2 Phototransistor via Janus Interfaces with 2D Perovskite and Ferroelectric Layers T Tong, Y Gan, W Li, W Zhang, H Song, H Zhang, K Liao, J Deng, S Li, ... ACS nano 17 (1), 530-538, 2022 | 10 | 2022 |
| Reliability of ultrathin high-κ dielectrics on chemical-vapor deposited 2D semiconductors Z Yu, H Ning, CC Cheng, W Li, L Liu, W Meng, Z Luo, T Li, S Cai, P Wang, ... 2020 IEEE International Electron Devices Meeting (IEDM), 3.2. 1-3.3. 4, 2020 | 9 | 2020 |
| A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps Y Xu, W sheng Li, D Fan, Y Shi, H Qiu, X Wang 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021 | 8 | 2021 |
| Bi2O2Se/Au-Based Schottky Phototransistor With Fast Response and Ultrahigh Responsivity T Tong, W Li, S Qin, X Yuan, Y Chen, C Zhang, W Liu, P Wang, W Hu, ... IEEE Electron Device Letters 41 (10), 1464-1467, 2020 | 8 | 2020 |
| Two-dimensional semiconductor integrated circuits operating at gigahertz frequencies D Fan, W Li, H Qiu, Y Xu, S Gao, L Liu, T Li, F Huang, Y Mao, W Zhou, ... Nature Electronics 6 (11), 879-887, 2023 | 7 | 2023 |
| Logical integration device for two-dimensional semiconductor transition metal sulfide L Wei-Sheng, Z Jian, W Han-Chen, W Shu-Xian, Y Zhi-Hao, L Song-Lin, ... ACTA PHYSICA SINICA 66 (21), 2017 | 6 | 2017 |
Taotao LiNanjing University在 nju.edu.cn 的电子邮件经过验证
