| Reconfigurable neuromorphic computing block through integration of flash synapse arrays and super-steep neurons D Kwon, SY Woo, KH Lee, J Hwang, H Kim, SH Park, W Shin, JH Bae, ... Science Advances 9 (29), eadg9123, 2023 | 8 | 2023 |
| Retention Improvement in Vertical NAND Flash Memory Using 1-bit Soft Erase Scheme and its Effects on Neural Networks SH Park, D Kwon, HN Yoo, JW Back, J Hwang, Y Yang, JJ Kim, JH Lee 2022 International Electron Devices Meeting (IEDM), 5.5. 1-5.5. 4, 2022 | 6 | 2022 |
| In‐memory‐computed low‐frequency noise spectroscopy for selective gas detection using a reducible metal oxide W Shin, J Kim, G Jung, S Ju, SH Park, Y Jeong, S Hong, RH Koo, Y Yang, ... Advanced Science 10 (7), 2205725, 2023 | 5 | 2023 |
| Comparative Analysis of n- and p-type Ferroelectric Tunnel Junctions Through Understanding of non-FE Resistance Switching RH Koo, W Shin, S Ryu, K Lee, SH Park, J Im, JH Ko, JH Kim, D Kwon, ... IEEE Electron Device Letters, 2023 | 4 | 2023 |
| Proposition of Adaptive Read Bias: A Solution to Overcome Power and Scaling Limitations in Ferroelectric‐Based Neuromorphic System RH Koo, W Shin, S Kim, J Im, SH Park, JH Ko, D Kwon, JJ Kim, D Kwon, ... Advanced Science 11 (5), 2303735, 2024 | 3 | 2024 |
| Reliability Improvement in Vertical nand Flash Cells Using Adaptive Incremental Step Pulse Programming (A-ISPP) and Incremental Step Pulse Erasing (ISPE) SH Park, HN Yoo, Y Yang, JJ Kim, JH Lee IEEE Transactions on Electron Devices, 2024 | 2 | 2024 |
| Voltage scheme for string-select transistors to improve inhibition characteristics during 1-bit erase in vertical NAND flash SH Park, HN Yoo, Y Yang, JW Back, RH Koo, D Kwon, JJ Kim, JH Lee Applied Physics Letters 123 (14), 2023 | 2 | 2023 |
| Vertical AND-type Flash TFT Array Capable of Accurate Vector-Matrix Multiplication Operations for Hardware Neural Networks J Im, J Kim, J Hwang, M Park, RH Koo, J Ko, SH Park, WY Choi, JH Lee IEEE Electron Device Letters, 2024 | | 2024 |
| On-Chip Learning in Vertical NAND Flash Memory Using Forward–Forward Algorithm SH Park, J Ko, IS Lee, RH Koo, JH Kim, Y Yang, D Kwon, JJ Kim, JH Lee IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Improvement of Retention Characteristics of Charge Trap Flash Memory Cells by Soft Erase after Programming SH Park, D Kwon, HN Yoo, JJ Kim, JH Lee 대한전자공학회 학술대회, 509-510, 2022 | | 2022 |
Jong-Ho LeeDepartment of Electrical and Computer Engineering, Seoul National University在 snu.ac.kr 的电子邮件经过验证
Jong-Ho LeeDepartment of Electrical and Computer Engineering, Seoul National University在 snu.ac.kr 的电子邮件经过验证