Three-dimensional nanoscale flexible memristor networks with ultralow power for information transmission and processing application TY Wang, JL Meng, MY Rao, ZY He, L Chen, H Zhu, QQ Sun, SJ Ding, ... Nano letters 20 (6), 4111-4120, 2020 | 151 | 2020 |
Integrated in-sensor computing optoelectronic device for environment-adaptable artificial retina perception application J Meng, T Wang, H Zhu, L Ji, W Bao, P Zhou, L Chen, QQ Sun, DW Zhang Nano Letters 22 (1), 81-89, 2021 | 134 | 2021 |
Ultralow power wearable heterosynapse with photoelectric synergistic modulation TY Wang, JL Meng, ZY He, L Chen, H Zhu, QQ Sun, SJ Ding, P Zhou, ... Advanced Science 7 (8), 1903480, 2020 | 124 | 2020 |
Reconfigurable optoelectronic memristor for in-sensor computing applications TY Wang, JL Meng, QX Li, ZY He, H Zhu, L Ji, QQ Sun, L Chen, ... Nano Energy 89, 106291, 2021 | 94 | 2021 |
Flexible boron nitride-based memristor for in situ digital and analogue neuromorphic computing applications JL Meng, TY Wang, ZY He, L Chen, H Zhu, L Ji, QQ Sun, SJ Ding, WZ Bao, ... Materials Horizons 8 (2), 538-546, 2021 | 87 | 2021 |
Reconfigurable neuromorphic memristor network for ultralow-power smart textile electronics T Wang, J Meng, X Zhou, Y Liu, Z He, Q Han, Q Li, J Yu, Z Li, Y Liu, H Zhu, ... Nature Communications 13 (1), 7432, 2022 | 83 | 2022 |
Flexible 3D memristor array for binary storage and multi‐states neuromorphic computing applications TY Wang, JL Meng, L Chen, H Zhu, QQ Sun, SJ Ding, WZ Bao, DW Zhang InfoMat 3 (2), 212-221, 2021 | 69 | 2021 |
Energy-efficient flexible photoelectric device with 2D/0D hybrid structure for bio-inspired artificial heterosynapse application JL Meng, TY Wang, L Chen, QQ Sun, H Zhu, L Ji, SJ Ding, WZ Bao, ... Nano Energy 83, 105815, 2021 | 56 | 2021 |
Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity TY Wang, JL Meng, ZY He, L Chen, H Zhu, QQ Sun, SJ Ding, DW Zhang Nanoscale research letters 14, 1-6, 2019 | 50 | 2019 |
Forming-free flexible memristor with multilevel storage for neuromorphic computing by full PVD technique TY Wang, JL Meng, QX Li, L Chen, H Zhu, QQ Sun, SJ Ding, DW Zhang Journal of Materials Science & Technology 60, 21-26, 2021 | 47 | 2021 |
Fully transparent, flexible and waterproof synapses with pattern recognition in organic environments TY Wang, JL Meng, ZY He, L Chen, H Zhu, QQ Sun, SJ Ding, P Zhou, ... Nanoscale Horizons 4 (6), 1293-1301, 2019 | 42 | 2019 |
Room-temperature developed flexible biomemristor with ultralow switching voltage for array learning TY Wang, JL Meng, ZY He, L Chen, H Zhu, QQ Sun, SJ Ding, P Zhou, ... Nanoscale 12 (16), 9116-9123, 2020 | 41 | 2020 |
A thiophene-modified doubleshell hollow gC 3 N 4 nanosphere boosts NADH regeneration via synergistic enhancement of charge excitation and separation J Meng, Y Tian, C Li, X Lin, Z Wang, L Sun, Y Zhou, J Li, N Yang, Y Zong, ... Catalysis Science & Technology 9 (8), 1911-1921, 2019 | 40 | 2019 |
A high-speed 2D optoelectronic in-memory computing device with 6-bit storage and pattern recognition capabilities J Meng, T Wang, Z He, Q Li, H Zhu, L Ji, L Chen, Q Sun, DW Zhang Nano Research, 1-7, 2022 | 21 | 2022 |
The doping effect on the intrinsic ferroelectricity in hafnium oxide-based nano-ferroelectric devices Z Li, J Wei, J Meng, Y Liu, J Yu, T Wang, K Xu, P Liu, H Zhu, S Chen, ... Nano Letters 23 (10), 4675-4682, 2023 | 18 | 2023 |
Ferroelectric hafnium oxide films for in‐memory computing applications Z Li, T Wang, J Yu, J Meng, Y Liu, H Zhu, Q Sun, DW Zhang, L Chen Advanced Electronic Materials 8 (12), 2200951, 2022 | 18 | 2022 |
CMOS back-end compatible memristors for in situ digital and neuromorphic computing applications ZY He, TY Wang, JL Meng, H Zhu, L Ji, QQ Sun, L Chen, DW Zhang Materials Horizons 8 (12), 3345-3355, 2021 | 17 | 2021 |
CMOS compatible low power consumption ferroelectric synapse for neuromorphic computing Z Li, J Meng, J Yu, Y Liu, T Wang, P Liu, S Chen, H Zhu, Q Sun, ... IEEE Electron Device Letters 44 (3), 532-535, 2023 | 12 | 2023 |
Li-ion doped artificial synaptic memristor for highly linear neuromorphic computing J Meng, Z Li, Y Fang, Q Li, Z He, T Wang, H Zhu, L Ji, Q Sun, DW Zhang, ... IEEE Electron Device Letters 43 (12), 2069-2072, 2022 | 10 | 2022 |
Flexible aluminum-doped hafnium oxide ferroelectric synapse devices for neuromorphic computing Z Li, T Wang, J Meng, H Zhu, Q Sun, DW Zhang, L Chen Materials Horizons 10 (9), 3643-3650, 2023 | 9 | 2023 |