White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors JK Sheu, SJ Chang, CH Kuo, YK Su, LW Wu, YC Lin, WC Lai, JM Tsai, ... IEEE Photonics Technology Letters 15 (1), 18-20, 2003 | 805 | 2003 |
IEEE Electron Dev CY Chen, YK Su, SJ Chang, GC Chi, JK Sheu, JF Chen, CH Liu, UH Liaw Lett 22 (7), 321, 2001 | 360 | 2001 |
High-transparency Ni/Au ohmic contact to p-type GaN JK Sheu, YK Su, GC Chi, PL Koh, MJ Jou, CM Chang, CC Liu, WC Hung Applied physics letters 74 (16), 2340-2342, 1999 | 295 | 1999 |
400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes SJ Chang, CH Kuo, YK Su, LW Wu, JK Sheu, TC Wen, WC Lai, JR Chen, ... IEEE Journal of selected topics in quantum electronics 8 (4), 744-748, 2002 | 248 | 2002 |
GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts CH Chen, SJ Chang, YK Su, GC Chi, JY Chi, CA Chang, JK Sheu, ... IEEE Photonics Technology Letters 13 (8), 848-850, 2001 | 184 | 2001 |
The doping process and dopant characteristics of GaN JK Sheu, GC Chi Journal of Physics: Condensed Matter 14 (22), R657, 2002 | 166 | 2002 |
Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN JK Sheu, YK Su, GC Chi, MJ Jou, CM Chang Applied physics letters 72 (25), 3317-3319, 1998 | 158 | 1998 |
Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer JK Sheu, JM Tsai, SC Shei, WC Lai, TC Wen, CH Kou, YK Su, SJ Chang, ... IEEE Electron Device Letters 22 (10), 460-462, 2001 | 152 | 2001 |
n-UV+ blue/green/red white light emitting diode lamps CH Kuo, JK Sheu, SJ Chang, YK Su, LW Wu, JM Tsai, CH Liu, RK Wu Japanese Journal of Applied Physics 42 (4S), 2284, 2003 | 143 | 2003 |
Group III-V element-based LED having ESD protection capacity JK Sheu US Patent 6,593,597, 2003 | 139 | 2003 |
Solid-State Electron LW Wu, SJ Chang, YK Su, RW Chuang, YP Hsu, CH Kuo, WC Lai, ... Solid-State Electron 13, 239, 1970 | 138 | 1970 |
GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes YK Su, SJ Chang, CH Chen, JF Chen, GC Chi, JK Sheu, WC Lai, JM Tsai IEEE sensors journal 2 (4), 366-371, 2002 | 132 | 2002 |
The effect of thermal annealing on the Ni/Au contact of type GaN JK Sheu, YK Su, GC Chi, WC Chen, CY Chen, CN Huang, JM Hong, ... Journal of applied physics 83 (6), 3172-3175, 1998 | 128 | 1998 |
Nitride-based cascade near white light-emitting diodes CH Chen, SJ Chang, YK Su, JK Sheu, JF Chen, CH Kuo, YC Lin IEEE Photonics Technology Letters 14 (7), 908-910, 2002 | 122 | 2002 |
Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes LW Wu, SJ Chang, TC Wen, YK Su, JF Chen, WC Lai, CH Kuo, CH Chen, ... IEEE journal of quantum electronics 38 (5), 446-450, 2002 | 118 | 2002 |
Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer CJ Tun, JK Sheu, BJ Pong, ML Lee, MY Lee, CK Hsieh, CC Hu, GC Chi IEEE Photonics Technology Letters 18 (1), 274-276, 2005 | 114 | 2005 |
GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals YK Su, YZ Chiou, FS Juang, SJ Chang, JK Sheu Japanese Journal of Applied Physics 40 (4S), 2996, 2001 | 109 | 2001 |
Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer JK Sheu, YS Lu, ML Lee, WC Lai, CH Kuo, CJ Tun Applied physics letters 90 (26), 2007 | 108 | 2007 |
InGaN/AlInGaN light emitting diodes WC Lai, SJ Chang, M Yokoyama, JK Sheu, JF Chen IEEE Photon. Technol. Lett 13 (6), 559-561, 2001 | 108 | 2001 |
White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer JK Sheu, CJ Pan, GC Chi, CH Kuo, LW Wu, CH Chen, SJ Chang, YK Su IEEE Photonics Technology Letters 14 (4), 450-452, 2002 | 106 | 2002 |