Deep ultraviolet photoluminescence of water-soluble self-passivated graphene quantum dots L Tang, R Ji, X Cao, J Lin, H Jiang, X Li, KS Teng, CM Luk, S Zeng, J Hao, ... ACS nano 6 (6), 5102-5110, 2012 | 1794 | 2012 |
Deep ultraviolet to near-infrared emission and photoresponse in layered N-doped graphene quantum dots L Tang, R Ji, X Li, G Bai, CP Liu, J Hao, J Lin, H Jiang, KS Teng, Z Yang, ... ACS nano 8 (6), 6312-6320, 2014 | 528 | 2014 |
Band structure and fundamental optical transitions in wurtzite AlN J Li, KB Nam, ML Nakarmi, JY Lin, HX Jiang, P Carrier, SH Wei Applied Physics Letters 83 (25), 5163-5165, 2003 | 467 | 2003 |
III-Nitride Blue and Ultraviolet Photonic Crystal Light Emitting Diodes TN Oder, KH Kim, JY Lin, HX Jiang APPLIED PHYSICS LETTERS 84 (4), 466-468, 2004 | 462 | 2004 |
InGaN/GaN multiple quantum well solar cells with long operating wavelengths R Dahal, B Pantha, J Li, JY Lin, HX Jiang Applied Physics Letters 94 (6), 2009 | 457 | 2009 |
Unique optical properties of AlGaN alloys and related ultraviolet emitters KB Nam, J Li, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 84 (25), 5264-5266, 2004 | 429 | 2004 |
III-nitride blue microdisplays HX Jiang, SX Jin, J Li, J Shakya, JY Lin Applied Physics Letters 78 (9), 1303-1305, 2001 | 374 | 2001 |
III-Nitride full-scale high-resolution microdisplays J Day, J Li, DYC Lie, C Bradford, JY Lin, HX Jiang Applied Physics Letters 99 (3), 2011 | 371 | 2011 |
Mg acceptor level in AlN probed by deep ultraviolet photoluminescence KB Nam, ML Nakarmi, J Li, JY Lin, HX Jiang Applied physics letters 83 (5), 878-880, 2003 | 354 | 2003 |
Structural phase behavior in II–VI semiconductor nanoparticles RJ Bandaranayake, GW Wen, JY Lin, HX Jiang, CM Sorensen Applied physics letters 67 (6), 831-833, 1995 | 310 | 1995 |
Heterogeneous integrated high voltage DC/AC light emitter Z Fan, H Jiang, J Lin US Patent 7,221,044, 2007 | 307 | 2007 |
Fundamental optical transitions in GaN GD Chen, M Smith, JY Lin, HX Jiang, SH Wei, M Asif Khan, CJ Sun Applied Physics Letters 68 (20), 2784-2786, 1996 | 302 | 1996 |
Light emitting diodes for high AC voltage operation and general lighting H Jiang, J Lin, S Jin US Patent 6,957,899, 2005 | 298 | 2005 |
GaN microdisk light emitting diodes SX Jin, J Li, JZ Li, JY Lin, HX Jiang Applied Physics Letters 76 (5), 631-633, 2000 | 257 | 2000 |
InGaN/GaN multiple quantum well concentrator solar cells R Dahal, J Li, K Aryal, JY Lin, HX Jiang Applied Physics Letters 97 (7), 2010 | 253 | 2010 |
III-nitride photonic crystals TN Oder, J Shakya, JY Lin, HX Jiang Applied Physics Letters 83 (6), 1231-1233, 2003 | 245 | 2003 |
(Invited) Nitride micro-LEDs and beyond - a decade progress review HX Jiang, JY Lin OPTICS EXPRESS 21 (Focus issue: Renewable energy and the environment), A475, 2013 | 240 | 2013 |
Optical and electrical properties of Mg-doped p-type J Li, TN Oder, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 80 (7), 1210-1212, 2002 | 237 | 2002 |
200nm deep ultraviolet photodetectors based on AlN J Li, ZY Fan, R Dahal, ML Nakarmi, JY Lin, HX Jiang Applied Physics Letters 89 (21), 2006 | 236 | 2006 |
Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material R Dahal, J Li, S Majety, BN Pantha, XK Cao, JY Lin, HX Jiang Applied physics letters 98 (21), 2011 | 225 | 2011 |