| Dielectric breakdown mechanisms in gate oxides S Lombardo, JH Stathis, BP Linder, KL Pey, F Palumbo, CH Tung Journal of applied physics 98 (12), 2005 | 544 | 2005 |
| A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics F Palumbo, C Wen, S Lombardo, S Pazos, F Aguirre, M Eizenberg, F Hui, ... Advanced Functional Materials 30 (18), 1900657, 2020 | 180 | 2020 |
| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 160 | 2021 |
| Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient CH Tung, KL Pey, LJ Tang, MK Radhakrishnan, WH Lin, F Palumbo, ... Applied Physics Letters 83 (11), 2223-2225, 2003 | 109 | 2003 |
| On the thermal models for resistive random access memory circuit simulation JB Roldán, G González-Cordero, R Picos, E Miranda, F Palumbo, ... Nanomaterials 11 (5), 1261, 2021 | 58 | 2021 |
| Dielectric breakdown in chemical vapor deposited hexagonal boron nitride L Jiang, Y Shi, F Hui, K Tang, Q Wu, C Pan, X Jing, H Uppal, F Palumbo, ... ACS applied materials & interfaces 9 (45), 39758-39770, 2017 | 57 | 2017 |
| Continuous High-Altitude Measurements of Cosmic Ray Neutrons and SEU/MCU at Various Locations: Correlation and Analyses Based-On MUSCA SEP G Hubert, R Velazco, C Federico, A Cheminet, C Silva-Cardenas, ... IEEE Transactions on Nuclear Science 60 (4), 2418-2426, 2013 | 49 | 2013 |
| A novel approach to characterization of progressive breakdown in high-k/metal gate stacks R Pagano, S Lombardo, F Palumbo, P Kirsch, SA Krishnan, C Young, ... Microelectronics Reliability 48 (11-12), 1759-1764, 2008 | 42 | 2008 |
| Physical mechanism of progressive breakdown in gate oxides F Palumbo, S Lombardo, M Eizenberg Journal of Applied Physics 115 (22), 2014 | 40 | 2014 |
| 150 nm× 200 nm cross‐point hexagonal boron nitride‐based memristors B Yuan, X Liang, L Zhong, Y Shi, F Palumbo, S Chen, F Hui, X Jing, ... Advanced Electronic Materials 6 (12), 1900115, 2020 | 33 | 2020 |
| Application of the quasi-static memdiode model in cross-point arrays for large dataset pattern recognition FL Aguirre, SM Pazos, F Palumbo, J Suñé, E Miranda IEEE Access 8, 202174-202193, 2020 | 28 | 2020 |
| Radiation hardness of silicon photomultipliers under 60Co γ-ray irradiation R Pagano, S Lombardo, F Palumbo, D Sanfilippo, G Valvo, G Fallica, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2014 | 25 | 2014 |
| Temperature of conductive nanofilaments in hexagonal boron nitride based memristors showing threshold resistive switching M Lanza, F Palumbo, Y Shi, F Aguirre, S Boyeras, B Yuan, E Yalon, ... Advanced Electronic Materials 8 (8), 2100580, 2022 | 24 | 2022 |
| Hf-based high-k dielectrics for p-Ge MOS gate stacks S Fadida, F Palumbo, L Nyns, D Lin, S Van Elshocht, M Caymax, ... Journal of Vacuum Science & Technology B 32 (3), 2014 | 24 | 2014 |
| Degradation characteristics of metal/Al2O3/n-InGaAs capacitors F Palumbo, M Eizenberg Journal of Applied Physics 115 (1), 2014 | 24 | 2014 |
| Analytic expression for the Fowler–Nordheim V–I characteristic including the series resistance effect E Miranda, F Palumbo Solid-state electronics 61 (1), 93-95, 2011 | 22 | 2011 |
| Formation and Characterization of Filamentary Current Paths in-Based Resistive Switching Structures F Palumbo, E Miranda, G Ghibaudo, V Jousseaume IEEE electron device letters 33 (7), 1057-1059, 2012 | 21 | 2012 |
| Structure and conductance of the breakdown spot during the early stages of progressive breakdown G Condorelli, SA Lombardo, F Palumbo, KL Pey, CH Tung, LJ Tang IEEE Transactions on Device and Materials Reliability 6 (4), 534-541, 2006 | 19 | 2006 |
| Structure of the oxide damage under progressive breakdown F Palumbo, G Condorelli, S Lombardo, KL Pey, CH Tung, LJ Tang Microelectronics Reliability 45 (5-6), 845-848, 2005 | 19 | 2005 |
| Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials S Pazos, F Aguirre, E Miranda, S Lombardo, F Palumbo Journal of Applied Physics 121 (9), 2017 | 18 | 2017 |
Salvatore LombardoCNR-IMM在 imm.cnr.it 的电子邮件经过验证
