| A stochastic framework for the time kinetics of interface and bulk oxide traps for BTI, SILC, and TDDB in MOSFETs S Kumar, R Anandkrishnan, N Parihar, S Mahapatra IEEE Transactions on Electron Devices 67 (11), 4741-4748, 2020 | 20 | 2020 |
| NBTI-related variability impact on 14-nm node FinFET SRAM performance and static power: Correlation to time zero fluctuations S Mishra, N Parihar, R Anandkrishnan, CK Dabhi, YS Chauhan, ... IEEE Transactions on Electron Devices 65 (11), 4846-4853, 2018 | 13 | 2018 |
| A comparative analysis of NBTI variability and TDDS in GF HKMG planar p-MOSFETs and RMG HKMG p-FinFETs N Parihar, R Anandkrishnan, A Chaudhary, S Mahapatra IEEE Transactions on Electron Devices 66 (8), 3273-3278, 2019 | 11 | 2019 |
| A stochastic modeling framework for NBTI and TDDS in small area p-MOSFETs R Anandkrishnan, S Bhagdikar, N Choudhury, R Rao, B Fernandez, ... 2018 International Conference on Simulation of Semiconductor Processes and …, 2018 | 8 | 2018 |
Narendra PariharIntel Corporation在 intel.com 的电子邮件经过验证
