| GaAs interfacial self-cleaning by atomic layer deposition CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ... Applied Physics Letters 92 (7), 2008 | 490 | 2008 |
| Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning CL Hinkle, M Milojevic, B Brennan, AM Sonnet, FS Aguirre-Tostado, ... Applied Physics Letters 94 (16), 2009 | 315 | 2009 |
| Half-cycle atomic layer deposition reaction studies of Al2O3 on In0. 2Ga0. 8As (100) surfaces M Milojevic, FS Aguirre-Tostado, CL Hinkle, HC Kim, EM Vogel, J Kim, ... Applied Physics Letters 93 (20), 2008 | 191 | 2008 |
| Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4) 2S passivated GaAs (100) surfaces M Milojevic, CL Hinkle, FS Aguirre-Tostado, HC Kim, EM Vogel, J Kim, ... Applied Physics Letters 93 (25), 2008 | 134 | 2008 |
| Frequency dispersion reduction and bond conversion onn-type GaAs by in-situ surface oxide removal and passivation CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ... Applied Physics Letters 91 (16), 163512-163512-3, 2007 | 126 | 2007 |
| Copper− Metal Deposition on Self Assembled Monolayer for Making Top Contacts in Molecular Electronic Devices O Seitz, M Dai, FS Aguirre-Tostado, RM Wallace, YJ Chabal Journal of the American Chemical Society 131 (50), 18159-18167, 2009 | 112 | 2009 |
| Optimisation of the ammonium sulphide (NH< sub> 4</sub>)< sub> 2</sub> S passivation process on In< sub> 0.53</sub> Ga< sub> 0.47</sub> As B Brennan, M Milojevic, CL Hinkle, FS Aguirre-Tostado, G Hughes, ... Applied Surface Science 257 (9), 4082-4090, 2011 | 102* | 2011 |
| Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric T Yang, Y Xuan, D Zemlyanov, T Shen, YQ Wu, JM Woodall, PD Ye, ... Applied Physics Letters 91 (14), 142122-142122-3, 2007 | 77 | 2007 |
| S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates FS Aguirre-Tostado, M Milojevic, KJ Choi, HC Kim, CL Hinkle, EM Vogel, ... Applied Physics Letters 93 (6), 061907-061907-3, 2008 | 74 | 2008 |
| Indium stability on InGaAs during atomic H surface cleaning FS Aguirre-Tostado, M Milojevic, CL Hinkle, EM Vogel, RM Wallace, ... Applied Physics Letters 92 (17), 2008 | 73 | 2008 |
| Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics CL Hinkle, AM Sonnet, M Milojevic, FS Aguirre-Tostado, HC Kim, J Kim, ... Applied Physics Letters 93 (11), 113506-113506-3, 2008 | 65 | 2008 |
| The slope-background for the near-peak regimen of photoemission spectra A Herrera-Gomez, M Bravo-Sanchez, FS Aguirre-Tostado, ... Journal of Electron Spectroscopy and Related Phenomena 189, 76-80, 2013 | 62 | 2013 |
| Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems S McDonnell, H Dong, JM Hawkins, B Brennan, M Milojevic, ... Applied Physics Letters 100 (14), 2012 | 61 | 2012 |
| Photoemission from the Sr/Si (001) interface A Herrera-Gomez, FS Aguirre-Tostado, Y Sun, P Pianetta, Z Yu, ... Journal of Applied Physics 90 (12), 6070-6072, 2001 | 54 | 2001 |
| Report on the 47th IUVSTA Workshop ‘Angle‐Resolved XPS: the current status and future prospects for angle‐resolved XPS of nano and subnano films A Herrera‐Gomez, JT Grant, PJ Cumpson, M Jenko, FS Aguirre‐Tostado, ... Surface and Interface Analysis 41 (11), 840-857, 2009 | 50 | 2009 |
| Composition dependence of the work function of Ta1-xAlxNy metal gates HN Alshareef, K Choi, HC Wen, H Luan, H Harris, Y Senzaki, P Majhi, ... Applied Physics Letters 88 (7), 072108-072108-3, 2006 | 49 | 2006 |
| Instrument-related geometrical factors affecting the intensity in XPS and ARXPS experiments A Herrera-Gomez, FS Aguirre-Tostado, PG Mani-Gonzalez, ... Journal of Electron Spectroscopy and Related Phenomena 184, 487–500, 2011 | 43 | 2011 |
| Aging effect of plasma-treated carbon surfaces: An overlooked phenomenon JI Mendez-Linan, E Ortiz-Ortega, MF Jimenez-Moreno, MI Mendivil-Palma, ... Carbon 169, 32-44, 2020 | 42 | 2020 |
| P-type thin films transistors with solution-deposited lead sulfide films as semiconductor A Carrillo-Castillo, A Salas-Villasenor, I Mejia, S Aguirre-Tostado, ... Thin Solid Films 520 (7), 3107-3110, 2012 | 40 | 2012 |
| In situ study of surface reactions of atomic layer deposited LaxAl2-xO3 films on atomically clean In0.2Ga0.8As FS Aguirre-Tostado, M Milojevic, B Lee, J Kim, RM Wallace Applied Physics Letters 93 (17), 172907-172907-3, 2008 | 39 | 2008 |
Robert M. WallaceUniversity of Texas at Dallas在 utdallas.edu 的电子邮件经过验证
