| Analog and RF performance evaluation of junctionless accumulation mode (JAM) gate stack gate all around (GS-GAA) FinFET B Kumar, R Chaujar Silicon 13, 919-927, 2021 | 51 | 2021 |
| TCAD temperature analysis of gate stack gate all around (GS-GAA) FinFET for improved RF and wireless performance B Kumar, R Chaujar Silicon 13 (10), 3741-3753, 2021 | 37 | 2021 |
| Numerical study of JAM-GS-GAA FinFET: a Fin aspect ratio optimization for upgraded analog and intermodulation distortion performance B Kumar, R Chaujar Silicon 14 (1), 309-321, 2022 | 22 | 2022 |
| The effect of gate stack and high-ĸ spacer on device performance of a junctionless GAA FinFET B Kumar, A Kumar, R Chaujar 2020 IEEE vlsi device circuit and system (vlsi dcs), 159-163, 2020 | 16 | 2020 |
| Numerical simulation of analog metrics and parasitic capacitances of GaAs GS-GAA FinFET for ULSI switching applications B Kumar, R Chaujar The European Physical Journal Plus 137 (1), 110, 2022 | 10 | 2022 |
| Fin aspect ratio optimization of novel junctionless gate stack gate all around (GS-GAA) FinFET for analog/RF applications B Kumar, R Chaujar Microelectronics, Circuits and Systems: Select Proceedings of 7th …, 2021 | 10 | 2021 |
| Gate electrode work function engineered JAM-GS-GAA FinFET for analog/RF applications: Performance estimation and optimization B Kumar, M Sharma, R Chaujar Microelectronics Journal 135, 105766, 2023 | 7 | 2023 |
| Junctionless-accumulation-mode stacked gate GAA FinFET with dual-k spacer for reliable RFIC design B Kumar, M Sharma, R Chaujar Microelectronics Journal 139, 105910, 2023 | 5 | 2023 |
| Polarization induced doping and high-k passivation engineering on T-gate MOS-HEMT for improved RF/microwave performance M Sharma, B Kumar, R Chaujar Materials Science and Engineering: B 290, 116298, 2023 | 5 | 2023 |
| Gate engineered GAA silicon-nanowire MOSFET for high switching performance N Gupta, A Kumar, R Chaujar, B Kumar, MM Tripathi 2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), 258-262, 2020 | 3 | 2020 |
| Fin field-effect-transistor engineered sensor for detection of MDA-MB-231 breast cancer cells: A switching-ratio-based sensitivity analysis B Kumar, R Chaujar Physical Review E 108 (3), 034408, 2023 | 2 | 2023 |
| Small signal and noise analysis of T-gate HEMT with polarization doped buffer for LNAs M Sharma, B Kumar, R Chaujar Micro and Nanostructures 180, 207593, 2023 | 2 | 2023 |
| Scattering parameter analysis of gate stack gate all around (GS-GAA) FinFET at THz for RF applications B Kumar, M Sharma, R Chaujar 2022 8th International Conference on Signal Processing and Communication …, 2022 | 1 | 2022 |
| Dual-k spacer JAM-GS-GAA FinFET: a device for low power analog applications B Kumar, M Sharma, R Chaujar 2022 IEEE Silchar Subsection Conference (SILCON), 1-5, 2022 | 1 | 2022 |
| REVIEW RESEARCH PAPER NEUROMORPHIC COMPUTING AND APPLICATIONS H Dureja, Y Garg, R Chaujar, B Kumar | 1 | |
| Improved optical characteristics in BaBi2Nb2O9 ferroelectric ceramic infused with transition metal ion (W6+) and rare earth ions (Er3+/Yb3+) A Banwal, B Kumar, M Verma, A Shandilya, B Singh, R Bokolia Journal of Luminescence, 120809, 2024 | | 2024 |
| Small Signal Analysis of Stacked Gate GAA FinFET at THz Frequency for RF and Microwave Applications B Kumar, R Chaujar 2022 IEEE International RF and Microwave Conference (RFM), 1-4, 2022 | | 2022 |
| Numerical Study of a Symmetric Underlap S/D High-ĸ Spacer on JAM-GAA FinFET for Low-Power Applications B Kumar, R Chaujar Emerging Low-Power Semiconductor Devices, 153-174, 2022 | | 2022 |
| Linearity analysis of T-gate HEMT with graded back-barrier for wireless applications M Sharma, B Kumar, R Chaujar 2022 IEEE International Conference on Electronics, Computing and …, 2022 | | 2022 |
| Simulation investigation of double-heterostructure T-gate HEMT with graded back-barrier engineering for improved RF performance M Sharma, B Kumar, R Chaujar Materials Today: Proceedings 71, 155-159, 2022 | | 2022 |
Prof. Rishu ChaujarDepartment of Applied Physics, Delhi Technological University在 dtu.ac.in 的电子邮件经过验证
