| Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures GH Lee*, YJ Yu*, X Cui, N Petrone, CH Lee, MS Choi, DY Lee, C Lee, ... ACS nano 7 (9), 7931-7936, 2013 | 1219 | 2013 |
| Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices MS Choi*, GH Lee*, YJ Yu*, DY Lee, SH Lee, P Kim, J Hone, WJ Yoo Nature communications 4, 1624, 2013 | 767 | 2013 |
| Fermi level pinning at electrical metal contacts of monolayer molybdenum dichalcogenides C Kim*, I Moon*, D Lee, MS Choi, F Ahmed, S Nam, Y Cho, HJ Shin, ... ACS nano 11 (2), 1588-1596, 2017 | 760 | 2017 |
| Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics MS Choi, D Qu, D Lee, X Liu, K Watanabe, T Taniguchi, WJ Yoo ACS nano 8 (9), 9332-9340, 2014 | 573 | 2014 |
| Transferred via contacts as a platform for ideal two-dimensional transistors Y Jung*, MS Choi*, A Nipane, A Borah, B Kim, A Zangiabadi, T Taniguchi, ... Nature Electronics 2 (5), 187-194, 2019 | 225 | 2019 |
| Electrical characterization of 2D materials-based field-effect transistors SB Mitta*, MS Choi*, A Nipane*, F Ali, C Kim, JT Teherani, J Hone, ... 2D Materials 8 (1), 012002, 2021 | 142 | 2021 |
| Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors HM Li, DY Lee, MS Choi, D Qu, X Liu, CH Ra, WJ Yoo Scientific reports 4, 4041, 2014 | 137 | 2014 |
| Carrier transport at the metal–MoS 2 interface F Ahmed, MS Choi, X Liu, WJ Yoo Nanoscale 7 (20), 9222-9228, 2015 | 120 | 2015 |
| Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects X Liu*, MS Choi*, E Hwang, WJ Yoo, J Sun Advanced Materials 34 (15), 2108425, 2022 | 115 | 2022 |
| Electrically driven reversible phase changes in layered In2Se3 crystalline film MS Choi*, B Cheong*, CH Ra*, S Lee, JH Bae, S Lee, GD Lee, CW Yang, ... Advanced Materials 29 (42), 1703568, 2017 | 96 | 2017 |
| Passivated ambipolar black phosphorus transistors D Yue, D Lee, YD Jang, MS Choi, HJ Nam, DY Jung, WJ Yoo Nanoscale 8 (25), 12773-12779, 2016 | 85 | 2016 |
| Plasma treatments to improve metal contacts in graphene field effect transistor MS Choi, SH Lee, WJ Yoo Journal of Applied Physics 110 (7), 2011 | 85 | 2011 |
| Effects of plasma treatment on surface properties of ultrathin layered MoS2 S Kim*, MS Choi*, D Qu, CH Ra, X Liu, M Kim, YJ Song, WJ Yoo 2D Materials 3 (3), 035002, 2016 | 76 | 2016 |
| High electric field carrier transport and power dissipation in multilayer black phosphorus field effect transistor with dielectric engineering F Ahmed, YD Kim, MS Choi, X Liu, D Qu, Z Yang, J Hu, IP Herman, ... Advanced Functional Materials 27 (4), 1604025, 2017 | 58 | 2017 |
| High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide MS Choi*, A Nipane*, BSY Kim*, ME Ziffer, I Datta, A Borah, Y Jung, B Kim, ... Nature Electronics 4 (10), 731-739, 2021 | 55 | 2021 |
| High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure SH Lee*, MS Choi*, J Lee, C Ho Ra, X Liu, E Hwang, J Hee Choi, J Zhong, ... Applied Physics Letters 104 (5), 053103, 2014 | 46 | 2014 |
| Tunneling devices and methods of manufacturing the same J Choi, W Yoo, SH Lee, MS Choi, X Liu, J LEE US Patent 9,269,775, 2016 | 38 | 2016 |
| Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices A Nipane*, MS Choi*, PJ Sebastian, K Yao, A Borah, P Deshmukh, ... ACS Applied Materials & Interfaces 13 (1), 1930-1942, 2021 | 29 | 2021 |
| Recent progress in 1D contacts for 2D material-based devices MS Choi*, N Ali*, TD Ngo, H Choi, B Oh, H Yang, WJ Yoo Advanced Materials 34 (39), 2202408, 2022 | 24 | 2022 |
| Low-Resistance p-Type Ohmic Contacts to Ultrathin WSe2 by Using a Monolayer Dopant A Borah, A Nipane, MS Choi, J Hone, JT Teherani ACS Applied Electronic Materials 3 (7), 2941-2947, 2021 | 20 | 2021 |
Won Jong YooProfessor of Sungkyunkwan University在 skku.edu 的电子邮件经过验证
