| Single-photon detection in the mid-infrared up to 10 μm wavelength using tungsten silicide superconducting nanowire detectors VB Verma, B Korzh, AB Walter, AE Lita, RM Briggs, M Colangelo, Y Zhai, ... APL photonics 6 (5), 2021 | 107 | 2021 |
| Bolometric response in graphene based superconducting tunnel junctions H Vora, P Kumaravadivel, B Nielsen, X Du Applied Physics Letters 100, 2012 | 75 | 2012 |
| Graphene-based bolometers X Du, DE Prober, H Vora, C Mckitterick arXiv preprint arXiv:1308.4065, 2013 | 72 | 2013 |
| Advanced scaling of enhancement mode high-K gallium nitride-on-300mm-Si (111) transistor and 3D layer transfer GaN-silicon finfet CMOS integration HW Then, M Radosavljevic, P Koirala, N Thomas, N Nair, I Ban, ... 2021 IEEE International Electron Devices Meeting (IEDM), 11.1. 1-11.1. 4, 2021 | 30 | 2021 |
| Ultrasensitive graphene far-infrared power detectors CB McKitterick, DE Prober, H Vora, X Du Journal of Physics: Condensed Matter 27 (16), 164203, 2015 | 20 | 2015 |
| Graphene microbolometers with superconducting contacts for terahertz photon detection CB McKitterick, H Vora, X Du, BS Karasik, DE Prober Journal of Low Temperature Physics 176, 291-298, 2014 | 19 | 2014 |
| Scaled submicron field-plated enhancement mode high-K gallium nitride transistors on 300mm Si (111) wafer with power FoM (R ON xQ GG) of 3.1 mohm-nC at 40V and f T/f MAX of 130 … HW Then, M Radosavljevic, P Koirala, M Beumer, S Bader, A Zubair, ... 2022 International Electron Devices Meeting (IEDM), 35.1. 1-35.1. 4, 2022 | 15 | 2022 |
| Advances in Research on 300mm gallium nitride-on-Si (111) NMOS transistor and silicon CMOS integration HW Then, M Radosavljevic, N Desai, R Ehlert, V Hadagali, K Jun, ... 2020 IEEE International Electron Devices Meeting (IEDM), 27.3. 1-27.3. 4, 2020 | 14 | 2020 |
| Modeling Bloch oscillations in nanoscale Josephson junctions H Vora, RL Kautz, SW Nam, J Aumentado Physical review B 96 (5), 054505, 2017 | 12 | 2017 |
| Enhancement-mode 300-mm GaN-on-Si (111) with integrated Si CMOS for future mm-wave RF applications HW Then, M Radosavljevic, Q Yu, A Latorre-Rey, H Vora, S Bader, ... IEEE Microwave and Wireless Technology Letters 33 (6), 835-838, 2023 | 10 | 2023 |
| 5G mmWave power amplifier and low-noise amplifier in 300mm GaN-on-Si technology Q Yu, HW Then, D Thomson, J Chou, J Garrett, I Huang, I Momson, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 9 | 2022 |
| Nonlinear vs. bolometric radiation response and phonon thermal conductance in graphene-superconductor junctions H Vora, B Nielsen, X Du Journal of Applied Physics 115 (7), 2014 | 9 | 2014 |
| A fully integrated 3.2-4.7 GHz Doherty power amplifier in 300mm GaN-on-Si technology Q Yu, D Thomson, HW Then, A Latorre-Rey, M Radosavljevic, M Beumer, ... 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2022 | 4 | 2022 |
| DrGaN: An integrated CMOS driver-GaN power switch technology on 300mm GaN-on-Si with e-mode GaN MOSHEMT and 3D monolithic Si PMOS HW Then, M Radosavljevic, S Bader, A Zubair, H Vora, N Nair, P Koirala, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 2 | 2023 |
| Electron-phonon coupling in bilayer and single-layer graphene at sub-Kelvin temperatures C McKitterick, H Vora, X Du, M Rooks, D Prober APS March Meeting Abstracts 2014, A30. 010, 2014 | 1 | 2014 |
| Graphene-Superconductor hybrid device as Bolometer H Vora, N Mizuno, P Kumaravadivel, B Nielsen, X Du APS March Meeting Abstracts 2013, J7. 006, 2013 | 1 | 2013 |
| Transistor with a body and back gate structure in different material layers SJ Bader, HW Then, I Ban, HC Vora, M Radosavljevic US Patent App. 18/089,919, 2024 | | 2024 |
| Integrated circuit structures having backside high HW Then, M Radosavljevic, SJ Bader, A Zubair, P Koirala, MS Beumer, ... US Patent App. 18/088,541, 2024 | | 2024 |
| Gallium nitride (gan) devices with through-silicon vias HW Then, M Radosavljevic, HC Vora, SJ Bader, A Zubair, T Hoff, ... US Patent App. 18/088,545, 2024 | | 2024 |
| Low aluminum concentration aluminum gallium nitride interlayer for group iii-nitride (iii-n) devices H Vora, M Radosavljevic, P Koirala, HW Then, M Beumer, A Zubair, ... US Patent App. 18/084,438, 2024 | | 2024 |
Han Wui ThenIntel Corporation在 intel.com 的电子邮件经过验证
