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Li Yuanqing
Li Yuanqing
Infinera Canada Inc., IHP, University of Saskatchewan
在 infinera.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
Double node upsets hardened latch circuits
Y Li, H Wang, S Yao, X Yan, Z Gao, J Xu
Journal of Electronic Testing 31, 537-548, 2015
802015
Single event transient and TID study in 28 nm UTBB FDSOI technology
R Liu, A Evans, L Chen, Y Li, M Glorieux, R Wong, SJ Wen, J Cunha, ...
IEEE Transactions on Nuclear Science 64 (1), 113-118, 2016
582016
A quatro-based 65-nm flip-flop circuit for soft-error resilience
YQ Li, HB Wang, R Liu, L Chen, I Nofal, ST Shi, AL He, G Guo, SH Baeg, ...
IEEE Transactions on Nuclear Science 64 (6), 1554-1561, 2017
522017
An SEU-tolerant DICE latch design with feedback transistors
HB Wang, YQ Li, L Chen, LX Li, R Liu, S Baeg, N Mahatme, BL Bhuva, ...
IEEE Transactions on Nuclear Science 62 (2), 548-554, 2015
482015
Supply voltage dependence of heavy ion induced SEEs on 65 nm CMOS bulk SRAMs
Q Wu, Y Li, L Chen, A He, G Guo, SH Baeg, H Wang, R Liu, L Li, SJ Wen, ...
IEEE Transactions on Nuclear Science 62 (4), 1898-1904, 2015
382015
Evaluation of SEU performance of 28-nm FDSOI flip-flop designs
HB Wang, JS Kauppila, K Lilja, M Bounasser, L Chen, M Newton, YQ Li, ...
IEEE Transactions on Nuclear Science 64 (1), 367-373, 2016
332016
An area efficient SEU-tolerant latch design
HB Wang, JS Bi, ML Li, L Chen, R Liu, YQ Li, AL He, G Guo
IEEE Transactions on Nuclear Science 61 (6), 3660-3666, 2014
292014
An area efficient stacked latch design tolerant to SEU in 28 nm FDSOI technology
HB Wang, L Chen, R Liu, YQ Li, JS Kauppila, BL Bhuva, K Lilja, SJ Wen, ...
IEEE Transactions on Nuclear Science 63 (6), 3003-3009, 2016
272016
Design of SRAM-based low-cost SEU monitor for self-adaptive multiprocessing systems
J Chen, M Andjelkovic, A Simevski, Y Li, P Skoncej, M Krstic
2019 22nd Euromicro conference on digital system design (DSD), 514-521, 2019
262019
A 65 nm temporally hardened flip-flop circuit
YQ Li, HB Wang, R Liu, L Chen, I Nofal, QY Chen, AL He, G Guo, ...
IEEE Transactions on Nuclear Science 63 (6), 2934-2940, 2016
242016
Single-event transient sensitivity evaluation of clock networks at 28-nm CMOS technology
HB Wang, N Mahatme, L Chen, M Newton, YQ Li, R Liu, M Chen, ...
IEEE Transactions on Nuclear Science 63 (1), 385-391, 2016
242016
Use of decoupling cells for mitigation of SET effects in CMOS combinational gates
M Andjelkovic, M Babic, Y Li, O Schrape, M Krstic, R Kraemer
2018 25th IEEE International Conference on Electronics, Circuits and Systems …, 2018
162018
Analysis of advanced circuits for SET measurement
R Liu, A Evans, Q Wu, Y Li, L Chen, SJ Wen, R Wong, R Fung
2015 IEEE International Reliability Physics Symposium, SE. 7.1-SE. 7.7, 2015
132015
A self-checking approach for SEU/MBUs-hardened FSMs design based on the replication of one-hot code
L Yuanqing, Y Suying, X Jiangtao, G Jing
IEEE Transactions on Nuclear Science 59 (5), 2572-2579, 2012
112012
A novel built-in current sensor for N-WELL SET detection
HB Wang, R Liu, L Chen, JS Bi, ML Li, YQ Li
Journal of Electronic Testing 31, 395-401, 2015
92015
A 10-transistor 65 nm SRAM cell tolerant to single-event upsets
Y Li, L Li, Y Ma, L Chen, R Liu, H Wang, Q Wu, M Newton, M Chen
Journal of Electronic Testing 32, 137-145, 2016
82016
Double cell upsets mitigation through triple modular redundancy
Y Li, A Breitenreiter, M Andjelkovic, J Chen, M Babic, M Krstic
Microelectronics Journal 96, 104683, 2020
72020
Modeling and analysis of single-event transient sensitivity of a 65 nm clock tree
Y Li, L Chen, I Nofal, M Chen, H Wang, R Liu, Q Chen, M Krstic, S Shi, ...
Microelectronics Reliability 87, 24-32, 2018
62018
Simulation and experimental evaluation of a soft error tolerant layout for SRAM 6T bitcell in 65nm technology
L Li, Y Li, H Wang, R Liu, Q Wu, M Newton, Y Ma, L Chen
Journal of Electronic Testing 31, 561-568, 2015
52015
Characterization and modeling of SET generation effects in CMOS Standard logic cells
M Andjelkovic, Y Li, Z Stamenkovic, M Krstic, R Kraemer
2019 IEEE 25th International Symposium on On-Line Testing and Robust System …, 2019
42019
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