| Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy D Wang, P Wang, S Mondal, M Hu, D Wang, Y Wu, T Ma, Z Mi Applied Physics Letters 122 (5), 2023 | 39 | 2023 |
| Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In‐Memory Computing D Wang, P Wang, S Mondal, M Hu, Y Wu, T Ma, Z Mi Advanced Materials 35 (20), 2210628, 2023 | 35 | 2023 |
| Dawn of nitride ferroelectric semiconductors: from materials to devices P Wang, D Wang, S Mondal, M Hu, J Liu, Z Mi Semiconductor Science and Technology 38 (4), 043002, 2023 | 32 | 2023 |
| Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT D Wang, P Wang, M He, J Liu, S Mondal, M Hu, D Wang, Y Wu, T Ma, Z Mi Applied Physics Letters 122 (9), 2023 | 31 | 2023 |
| Impact of dislocation density on the ferroelectric properties of ScAlN grown by molecular beam epitaxy D Wang, P Wang, S Mondal, Y Xiao, M Hu, Z Mi Applied Physics Letters 121 (4), 2022 | 27 | 2022 |
| Ferroelectric YAlN grown by molecular beam epitaxy D Wang, S Mondal, J Liu, M Hu, P Wang, S Yang, D Wang, Y Xiao, Y Wu, ... Applied Physics Letters 123 (3), 2023 | 22 | 2023 |
| Ferroelectric Nitride Heterostructures on CMOS Compatible Molybdenum for Synaptic Memristors P Wang, D Wang, S Mondal, M Hu, Y Wu, T Ma, Z Mi ACS Applied Materials & Interfaces 15 (14), 18022-18031, 2023 | 16 | 2023 |
| Reconfigurable self-powered deep UV photodetectors based on ultrawide bandgap ferroelectric ScAlN S Mondal, D Wang, P Wang, Y Wu, M Hu, Y Xiao, S Mohanty, T Ma, ... APL Materials 10 (12), 2022 | 15 | 2022 |
| On the surface oxidation and band alignment of ferroelectric Sc0. 18Al0. 82N/GaN heterostructures D Wang, D Wang, P Zhou, M Hu, J Liu, S Mondal, T Ma, P Wang, Z Mi Applied Surface Science 628, 157337, 2023 | 9 | 2023 |
| Band alignment and charge carrier transport properties of YAlN/III-nitride heterostructures D Wang, S Mondal, P Kezer, M Hu, J Liu, Y Wu, P Zhou, T Ma, P Wang, ... Applied Surface Science 637, 157893, 2023 | 7 | 2023 |
| ScAlN-Based ITO Channel Ferroelectric Field-Effect Transistors With Large Memory Window S Mondal, D Wang, M Hu, J Liu, M He, P Wang, Z Mi IEEE Transactions on Electron Devices 70 (9), 4618-4621, 2023 | 4 | 2023 |
| Tunable bandgap and Si-doping in N-polar AlGaN on C-face 4H-SiC via molecular beam epitaxy S Mondal, D Wang, AFM Anhar Uddin Bhuiyan, M Hu, M Reddeppa, ... Applied Physics Letters 123 (18), 2023 | 3 | 2023 |
| Controlled ferroelectric switching in ultrawide bandgap AlN/ScAlN multilayers D Wang, P Wang, S Mondal, J Liu, M Hu, M He, S Nam, W Peng, S Yang, ... Applied Physics Letters 123 (10), 2023 | 3 | 2023 |
| Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties M Hu, P Wang, D Wang, Y Wu, S Mondal, D Wang, E Ahmadi, T Ma, Z Mi APL Materials 11 (12), 2023 | 1 | 2023 |
| Fully Epitaxial, Reconfigurable Ferroelectric ScAlN/AlGaN/GaN HEMTs D Wang, P Wang, M He, J Liu, S Mondal, M Hu, D Wang, Y Wu, T Ma, Z Mi 2023 Device Research Conference (DRC), 1-2, 2023 | 1 | 2023 |
| Electric-Field-Induced Domain Walls in Wurtzite Ferroelectrics D Wang, D Wang, M Molla, Y Liu, S Yang, M Hu, J Liu, Y Wu, T Ma, ... arXiv preprint arXiv:2312.08645, 2023 | | 2023 |
| Three-dimensional module with integrated passive components Guobiao Zhang, Hongyu Yu, Yuejin Guo, Shengming Zhou, Guoxing Zhang ... US Patent 11217542 B2, 2022 | | 2022 |
| Multi-Bit-Per-Cell Three-Dimensional Resistive Random Access Memory Guobiao Zhang, Yida Li, Xiaodong Xiang, Hongyu Yu, Yuejin Guo, Shengming ... US Patent 11170,863 B2, 2021 | | 2021 |
Zetian MiUniversity of Michigan, Ann Arbor在 umich.edu 的电子邮件经过验证
