Preparation and characterization of flash evaporated tin selenide thin films GH Chandra, JN Kumar, NM Rao, S Uthanna Journal of crystal growth 306 (1), 68-74, 2007 | 72 | 2007 |
Influence of substrate and selenization temperatures on the growth of Cu2SnSe3 films G Hema Chandra, O Lakshmana Kumar, R Prasada Rao, S Uthanna Journal of materials science 46, 6952-6959, 2011 | 48 | 2011 |
Structural and optical properties of CuIn0.35Al0.65Se2 thin films K Srinivas, J N. Kumar, G H. Chandra, S Uthanna Journal of Materials Science: Materials in Electronics 17, 1035-1039, 2006 | 24 | 2006 |
Growth and properties of Cu2ZnSnS4 thin films prepared by multiple metallic layer stacks as a function of sulfurization time N Thota, M Gurubhaskar, AC Kasi Reddy, G Hema Chandra, BR Mehta, ... Journal of Materials Science: Materials in Electronics 28, 11702-11711, 2017 | 23 | 2017 |
Influence of substrate temperature on the structural and optical properties of Cu0. 5Ag0. 5InSe2 films GV Rao, GH Chandra, PS Reddy, OM Hussain, KTR Reddy, S Uthanna Journal of Optoelectronics and Advanced Materials 4 (2), 387-392, 2002 | 23 | 2002 |
Characterization of AgGa0. 25In0. 75Se2 thin films GH Chandra, OM Hussain, S Uthanna, BS Naidu Vacuum 62 (1), 39-45, 2001 | 18 | 2001 |
Characterization of p-AgGa0. 25In0. 75Se2/n-Zn0. 35Cd0. 65S polycrystalline thin film heterojunctions GH Chandra, OM Hussain, S Uthanna, BS Naidu Materials Science and Engineering: B 86 (1), 60-63, 2001 | 16 | 2001 |
Characterization of Cu0. 5Ag0. 5InSe2 thin films GV Rao, GH Chandra, OM Hussain, S Uthanna, BS Naidu Journal of alloys and compounds 325 (1-2), 12-17, 2001 | 16 | 2001 |
Characteristics of Al/p‐Cu0.5Ag0.5InSe2 Polycrystalline Thin Film Schottky Barrier Diodes GV Rao, GH Chandra, OM Hussain, S Uthanna, B Srinivasulu Naidu Crystal Research and Technology: Journal of Experimental and Industrial …, 2001 | 16 | 2001 |
Influence of sulfurization time on two step grown SnS thin films M Gurubhaskar, N Thota, M Raghavender, GH Chandra, P Prathap, ... Vacuum 155, 318-324, 2018 | 15 | 2018 |
The influence of argon pressure and RF power on the growth of InP thin films GH Chandra, JP De la Cruz, J Ventura Semiconductor science and technology 26 (7), 075017, 2011 | 12 | 2011 |
Optical absorption studies on polycrystalline Cu0. 5Ag0. 5InSe2 thin films GV Rao, GH Chandra, PS Reddy, OM Hussain, KTR Reddy, S Uthanna Vacuum 67 (2), 293-298, 2002 | 12 | 2002 |
Effect of selenium incorporation at precursor stage on growth and properties of Cu2ZnSnSe4 thin films DR Nagapure, RM Patil, GS Mary, GH Chandra, MA Sunil, YPV Subbaiah, ... Vacuum 144, 43-52, 2017 | 11 | 2017 |
Growth and characterization of Cu2ZnGeSe4 thin films by selenization of multiple stacks (Cu/Se/ZnSe/Se/Ge/Se) in high vacuum GS Mary, DR Nagapure, RM Patil, GH Chandra, MA Sunil, RP Rao, ... Vacuum 131, 264-270, 2016 | 11 | 2016 |
Photovoltaic performance of p-AgGa0. 25In0. 75Se2/n-CdS thin film heterojunctions GH Chandra, OM Hussain, S Uthanna, BS Naidu Materials Letters 53 (3), 216-220, 2002 | 11 | 2002 |
Low temperature crystallization of Cu2ZnSnSe4 thin films using binary selenide precursors RM Patil, DR Nagapure, GS Mary, GH Chandra, MA Sunil, YPV Subbaiah, ... Journal of Materials Science: Materials in Electronics 28, 18244-18253, 2017 | 10 | 2017 |
Influence of Selenization Time on Microstructural, Optical, and Electrical Properties of Cu2ZnGeSe4 Films G Swapna Mary, G Hema Chandra, M Anantha Sunil, M Gupta Journal of Electronic Materials 47, 800-810, 2018 | 9 | 2018 |
Influence of substrate temperature on structural, electrical and optical properties of flash evaporated CuIn0.60Al0.40Se2 thin films GH Chandra, C Udayakumar, S Rajagopalan, AK Balamurugan, ... physica status solidi (a) 206 (4), 704-710, 2009 | 9 | 2009 |
Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering GH Chandra, JP de la Cruz Journal of crystal growth 354 (1), 67-75, 2012 | 8 | 2012 |
Growth of highly (1 1 1) oriented CuIn0. 75Al0. 25Se2 thin films GH Chandra, C Udayakumar, N Padhy, S Uthanna Materials science in semiconductor processing 13 (4), 288-294, 2010 | 8 | 2010 |