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Dr.G. Hema Chandra
Dr.G. Hema Chandra
在 phy.vnit.ac.in 的电子邮件经过验证
标题
引用次数
引用次数
年份
Preparation and characterization of flash evaporated tin selenide thin films
GH Chandra, JN Kumar, NM Rao, S Uthanna
Journal of crystal growth 306 (1), 68-74, 2007
722007
Influence of substrate and selenization temperatures on the growth of Cu2SnSe3 films
G Hema Chandra, O Lakshmana Kumar, R Prasada Rao, S Uthanna
Journal of materials science 46, 6952-6959, 2011
482011
Structural and optical properties of CuIn0.35Al0.65Se2 thin films
K Srinivas, J N. Kumar, G H. Chandra, S Uthanna
Journal of Materials Science: Materials in Electronics 17, 1035-1039, 2006
242006
Growth and properties of Cu2ZnSnS4 thin films prepared by multiple metallic layer stacks as a function of sulfurization time
N Thota, M Gurubhaskar, AC Kasi Reddy, G Hema Chandra, BR Mehta, ...
Journal of Materials Science: Materials in Electronics 28, 11702-11711, 2017
232017
Influence of substrate temperature on the structural and optical properties of Cu0. 5Ag0. 5InSe2 films
GV Rao, GH Chandra, PS Reddy, OM Hussain, KTR Reddy, S Uthanna
Journal of Optoelectronics and Advanced Materials 4 (2), 387-392, 2002
232002
Characterization of AgGa0. 25In0. 75Se2 thin films
GH Chandra, OM Hussain, S Uthanna, BS Naidu
Vacuum 62 (1), 39-45, 2001
182001
Characterization of p-AgGa0. 25In0. 75Se2/n-Zn0. 35Cd0. 65S polycrystalline thin film heterojunctions
GH Chandra, OM Hussain, S Uthanna, BS Naidu
Materials Science and Engineering: B 86 (1), 60-63, 2001
162001
Characterization of Cu0. 5Ag0. 5InSe2 thin films
GV Rao, GH Chandra, OM Hussain, S Uthanna, BS Naidu
Journal of alloys and compounds 325 (1-2), 12-17, 2001
162001
Characteristics of Al/p‐Cu0.5Ag0.5InSe2 Polycrystalline Thin Film Schottky Barrier Diodes
GV Rao, GH Chandra, OM Hussain, S Uthanna, B Srinivasulu Naidu
Crystal Research and Technology: Journal of Experimental and Industrial …, 2001
162001
Influence of sulfurization time on two step grown SnS thin films
M Gurubhaskar, N Thota, M Raghavender, GH Chandra, P Prathap, ...
Vacuum 155, 318-324, 2018
152018
The influence of argon pressure and RF power on the growth of InP thin films
GH Chandra, JP De la Cruz, J Ventura
Semiconductor science and technology 26 (7), 075017, 2011
122011
Optical absorption studies on polycrystalline Cu0. 5Ag0. 5InSe2 thin films
GV Rao, GH Chandra, PS Reddy, OM Hussain, KTR Reddy, S Uthanna
Vacuum 67 (2), 293-298, 2002
122002
Effect of selenium incorporation at precursor stage on growth and properties of Cu2ZnSnSe4 thin films
DR Nagapure, RM Patil, GS Mary, GH Chandra, MA Sunil, YPV Subbaiah, ...
Vacuum 144, 43-52, 2017
112017
Growth and characterization of Cu2ZnGeSe4 thin films by selenization of multiple stacks (Cu/Se/ZnSe/Se/Ge/Se) in high vacuum
GS Mary, DR Nagapure, RM Patil, GH Chandra, MA Sunil, RP Rao, ...
Vacuum 131, 264-270, 2016
112016
Photovoltaic performance of p-AgGa0. 25In0. 75Se2/n-CdS thin film heterojunctions
GH Chandra, OM Hussain, S Uthanna, BS Naidu
Materials Letters 53 (3), 216-220, 2002
112002
Low temperature crystallization of Cu2ZnSnSe4 thin films using binary selenide precursors
RM Patil, DR Nagapure, GS Mary, GH Chandra, MA Sunil, YPV Subbaiah, ...
Journal of Materials Science: Materials in Electronics 28, 18244-18253, 2017
102017
Influence of Selenization Time on Microstructural, Optical, and Electrical Properties of Cu2ZnGeSe4 Films
G Swapna Mary, G Hema Chandra, M Anantha Sunil, M Gupta
Journal of Electronic Materials 47, 800-810, 2018
92018
Influence of substrate temperature on structural, electrical and optical properties of flash evaporated CuIn0.60Al0.40Se2 thin films
GH Chandra, C Udayakumar, S Rajagopalan, AK Balamurugan, ...
physica status solidi (a) 206 (4), 704-710, 2009
92009
Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering
GH Chandra, JP de la Cruz
Journal of crystal growth 354 (1), 67-75, 2012
82012
Growth of highly (1 1 1) oriented CuIn0. 75Al0. 25Se2 thin films
GH Chandra, C Udayakumar, N Padhy, S Uthanna
Materials science in semiconductor processing 13 (4), 288-294, 2010
82010
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