| The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ... IEEE Transactions on Electron Devices 58 (11), 3652-3666, 2011 | 522 | 2011 |
| Origin of NBTI variability in deeply scaled pFETs B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ... 2010 IEEE International Reliability Physics Symposium, 26-32, 2010 | 377 | 2010 |
| Comphy—A compact-physics framework for unified modeling of BTI G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ... Microelectronics Reliability 85, 49-65, 2018 | 176 | 2018 |
| Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise T Grasser, H Reisinger, W Goes, T Aichinger, P Hehenberger, PJ Wagner, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 148 | 2009 |
| Recent advances in understanding the bias temperature instability T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ... 2010 international electron devices meeting, 4.4. 1-4.4. 4, 2010 | 134 | 2010 |
| From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation M Toledano-Luque, B Kaczer, J Franco, PJ Roussel, T Grasser, ... 2011 Symposium on VLSI Technology-Digest of Technical Papers, 152-153, 2011 | 125 | 2011 |
| SiGe channel technology: Superior reliability toward ultrathin EOT devices—Part I: NBTI J Franco, B Kaczer, PJ Roussel, J Mitard, M Cho, L Witters, T Grasser, ... IEEE Transactions on Electron Devices 60 (1), 396-404, 2012 | 116 | 2012 |
| A unified perspective of RTN and BTI T Grasser, K Rott, H Reisinger, M Waltl, J Franco, B Kaczer 2014 IEEE International Reliability Physics Symposium, 4A. 5.1-4A. 5.7, 2014 | 112 | 2014 |
| Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs J Franco, B Kaczer, M Toledano-Luque, PJ Roussel, J Mitard, ... Reliability Physics Symposium (IRPS), 2012 IEEE International, 5A. 4.1-5A. 4.6, 2012 | 110 | 2012 |
| Channel Hot Carrier Degradation Mechanism in Long/Short Channel -FinFETs M Cho, P Roussel, B Kaczer, R Degraeve, J Franco, M Aoulaiche, ... IEEE Transactions on Electron Devices 60 (12), 4002-4007, 2013 | 107 | 2013 |
| The ‘permanent’component of NBTI: Composition and annealing T Grasser, T Aichinger, G Pobegen, H Reisinger, PJ Wagner, J Franco, ... 2011 International Reliability Physics Symposium, 6A. 2.1-6A. 2.9, 2011 | 107 | 2011 |
| Insight into N/PBTI mechanisms in sub-1-nm-EOT devices M Cho, JD Lee, M Aoulaiche, B Kaczer, P Roussel, T Kauerauf, ... IEEE Transactions on Electron Devices 59 (8), 2042-2048, 2012 | 104 | 2012 |
| Predictive hot-carrier modeling of n-channel MOSFETs M Bina, S Tyaginov, J Franco, K Rupp, Y Wimmer, D Osintsev, B Kaczer, ... IEEE Transactions on Electron Devices 61 (9), 3103-3110, 2014 | 97 | 2014 |
| Response of a single trap to AC negative bias temperature stress M Toledano-Luque, B Kaczer, PJ Roussel, T Grasser, GI Wirth, J Franco, ... 2011 International Reliability Physics Symposium, 4A. 2.1-4A. 2.8, 2011 | 87 | 2011 |
| Understanding and modeling the temperature behavior of hot-carrier degradation in SiON nMOSFETs S Tyaginov, M Jech, J Franco, P Sharma, B Kaczer, T Grasser IEEE Electron Device Letters 37 (1), 84-87, 2015 | 84 | 2015 |
| Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors TL Wu, D Marcon, B Bakeroot, B De Jaeger, HC Lin, J Franco, S Stoffels, ... Applied Physics Letters 107 (9), 2015 | 73 | 2015 |
| Suitability of high-k gate oxides for III–V devices: A PBTI study in In0.53Ga0.47As devices with Al2O3 J Franco, A Alian, B Kaczer, D Lin, T Ivanov, A Pourghaderi, K Martens, ... 2014 IEEE International Reliability Physics Symposium, 6A. 2.1-6A. 2.6, 2014 | 72 | 2014 |
| Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs TL Wu, J Franco, D Marcon, B De Jaeger, B Bakeroot, S Stoffels, ... IEEE Transactions on Electron Devices 63 (5), 1853-1860, 2016 | 71 | 2016 |
| Degradation of time dependent variability due to interface state generation M Toledano-Luque, B Kaczer, J Franco, PJ Roussel, M Bina, T Grasser, ... VLSI Technology (VLSIT), 2013 Symposium on, T190-T191, 2013 | 67 | 2013 |
| Understanding the suppressed charge trapping in relaxed- and strained-Ge/SiO2/HfO2 pMOSFETs and implications for the screening of alternative high-mobility … J Franco, B Kaczer, PJ Roussel, J Mitard, S Sioncke, L Witters, H Mertens, ... 2013 IEEE International Electron Devices Meeting, 15.2. 1-15.2. 4, 2013 | 65 | 2013 |
